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    Method of forming aluminum/copper alloy conductors
    2.
    发明公开
    Method of forming aluminum/copper alloy conductors 失效
    Verfahren zum Formen von Leitern aus einer铝-Kupfer-Legierung。

    公开(公告)号：EP0045405A2

    公开(公告)日：1982-02-10

    申请号：EP81105490.7

    申请日：1981-07-14

    申请人： International Business Machines Corporation

    发明人： Chiu, George Tein-Chu ,  Joseph, Robert Roderick ,  Ozols, Gunars Miervaldis

    IPC分类号： H05K3/08 ,  H01L21/306 ,  H01L21/26 ,  C23C28/00

    CPC分类号： H01L21/76886 ,  H01L21/32051 ,  H01L21/32131 ,  H01L21/32136 ,  Y10S438/927

    摘要： The aluminum/copper alloy conductors are made by forming a patterned layer of copper (21) on a layer of aluminum (15) applied to a substrate (11) The portion of the aluminum layer (15) which is not protected by the copper layer (21) is removed by reactive ion etching without heating substrate (11) and the resulting structure is then heated to cause the copper (21) to diffuse into, and alloy with the aluminum layer (15).
    The method can in particular be used to form aluminum/ copper alloy conductor lands in integrated circuit manufacture.

    摘要翻译： 铝/铜合金导体通过在施加到基板（11）的铝层（15）上形成铜（21）的图案化层而制成。 通过反应离子蚀刻除去未被铜层（21）保护的铝层（15）的部分，而不加热基板（11），然后加热所得到的结构，使铜（21）扩散到， 并与铝层（15）合金。 ...该方法特别可用于在集成电路制造中形成铝/铜合金导体焊盘。

    High speed GaAs mesfet having refractory contacts and a self-aligned cold gate fabrication process
    3.
    发明公开
    High speed GaAs mesfet having refractory contacts and a self-aligned cold gate fabrication process 失效
    高速的GaAs MESFET与用于自对准栅极冷耐高温材料和制造工艺的触点。

    公开(公告)号：EP0287769A1

    公开(公告)日：1988-10-26

    申请号：EP88102435.0

    申请日：1988-02-19

    申请人： International Business Machines Corporation

    发明人： Balasubramanyam, Karanam ,  Joseph, Robert Roderick ,  Renbeck, Robert Buch

    IPC分类号： H01L29/64 ,  H01L21/28 ,  H01L21/00

    CPC分类号： H01L29/66871 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/28587 ,  H01L29/475 ,  Y10S148/02 ,  Y10S438/947 ,  Y10S438/951

    摘要： Disclosed is a novel MESFET having a gate (50) which is of submicron length, planar and provided with submicron sidewall insulator spacers (14˝). The source (30) and drain (32) are very shallow and are self-aligned to the gate via the spacers. The device is endowed with minimal gate overlap capacitance since the gate has little lapping over the source/drain contact metal and the associated passivation dielectric. Disclosed too is a process of fabrication of the MESFET in which starting with a GaAs substrate having a shallow N- layer covered with nitride, a submicron-wide gate consisting of upper and lower portions made of dissimilar materials is formed. Multilayer organic and sidewall image transfer techniques are employed for forming the mask. The nitride is etched using the gate mask. N+ source/drain are formed by ion implantation. The lower portion of the gate mask is etched to expose the periphery of the nitride. Refractory metal for source/drain contacts is deposited. An oxide layer is deposited to passivate the source/drain contacts and to fully cover the exposed nitride periphery. The gate mask is removed. High temperature anneal is accomplished to simultaneously activate the N+ regions and anneal the contact metal. By RIE the exposed nitride removed leaving submicron spacers thereof. Gate metal is deposited in the gate region. Excess gate metal is removed to obtain a gate which has a planar top and has little lapping over the source/drain contacts.

    摘要翻译： 本发明公开了具有门（50），所有这些是亚微米的长度，平面的和提供具有亚微米侧壁绝缘子隔板（14秒）的新颖MESFET。 源（30）和漏极（32）是非常浅的和自对准经由间隔物栅极。 该设备被赋予了最小的栅重叠电容，因为栅极具有比源极/漏极接触金属和相关联的电介质钝化小研磨。 还公开了在其中从具有覆盖有氮化物的浅N层的GaAs衬底中，亚微米范围内的栅极由......组成制成异种材料的上部和下部的是形成在所述MESFET的制造的方法。 多层结构的有机和侧壁图像转移技术被用于形成掩模。的氮化物是使用栅极掩模。N +源极/漏极通过离子注入形成刻蚀。 所述栅极掩模的下部被蚀刻以暴露所述氮化物的周边。 用于源极/漏极接触的难熔金属淀积。 氧化物层沉积到钝化源/漏接触，并完全覆盖暴露的氮化物周边。 栅极掩模被去除。 高温退火是造诣的同时激活N +区域和退火金属接触。 通过RIE除去，留下它们的亚微米的暴露的氮化物间隔物。 栅极金属在栅极区域沉积。 过量金属栅极被去除，得到栅极其中有一个平坦的顶和具有在所述源极/漏极接触小研磨。