公开(公告)号：EP2089909A1

公开(公告)日：2009-08-19

申请号：EP07844145.8

申请日：2007-10-11

申请人： International Business Machines Corporation

发明人： LI, Wai-Kin ,  YANG, Haining

IPC分类号： H01L29/94

CPC分类号： H01L29/42316 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78 ,  Y10S977/892

摘要： Fully and uniformly suicided gate conductors are produced by deeply 'perforating' suicide gate conductors with sub-lithographic, sub-critical dimension, nanometer-scale openings. A silicide-forming metal (e.g. cobalt, tungsten, etc.) is then deposited, polysilicon gates, covering them and filling the perforations. An anneal step converts the polysilicon to suicide. Because of the deep perforations, the surface area of polysilicon in contact with the silicide-forming metal is greatly increased over conventional silicidation techniques, causing the polysilicon gate to be fully converted to a uniform suicide composition. A self-assembling diblock copolymer is used to form a regular sub- lithographic nanometer-scale pattern that is used as an etching 'template' for forming the perforations.

摘要翻译： 通过深度“穿孔”硅化物栅导体和亚平版印刷，次临界尺寸，纳米尺寸的开口，生产完全和均匀硅化的栅极导体。 然后沉积硅化物形成金属（例如钴，钨等），多晶硅栅极，覆盖它们并填充穿孔。 退火步骤将多晶硅转化为自杀。 由于深孔，与硅化物形成金属接触的多晶硅的表面积比常规硅化技术大大增加，导致多晶硅栅完全转化为均匀的硅化物组合物。 自组装二嵌段共聚物用于形成规则的亚光刻纳米尺度图案，其被用作形成穿孔的蚀刻“模板”。

公开(公告)号：EP2089909B1

公开(公告)日：2014-12-10

申请号：EP07844145.8

申请日：2007-10-11

申请人： International Business Machines Corporation

发明人： LI, Wai-Kin ,  YANG, Haining

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/42316 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78 ,  Y10S977/892

公开(公告)号：EP2379441A2

公开(公告)日：2011-10-26

申请号：EP10715538.4

申请日：2010-04-23

申请人： International Business Machines Corporation

发明人： CHENG, Joy ,  NA, Young-Hye ,  LAI, Kafai ,  RETTNER, Charles, Thomas ,  SANDERS, Daniel, Paul ,  LI, Wai-Kin

IPC分类号： B81C1/00

CPC分类号： B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.