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1.发明授权A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product 失效形成与III-V族半导体和半导体中间体制造产品的OHMIC接触的方法
公开(公告)号：EP0200059B1
公开(公告)日：1992-07-01
申请号：EP86105004.5
申请日：1986-04-11
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rutz, Richard Frederick , Woodall, Jerry Macpherson
IPC分类号： H01L21/285
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
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2.发明授权Semiconductor integrated circuit optical image-to-electrical signal transducer 失效半导体集成电路光学图像到电信号传输器
公开(公告)号：EP0048805B1
公开(公告)日：1985-05-22
申请号：EP81106125.8
申请日：1981-08-05
CPC分类号： G06K7/10841 , H01L27/14681 , H01L27/14825
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3.发明公开A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product 失效一种形成与III-V族半导体和半导体中间体制造产品的欧姆接触的方法
公开(公告)号：EP0200059A2
公开(公告)日：1986-12-10
申请号：EP86105004.5
申请日：1986-04-11
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rutz, Richard Frederick , Woodall, Jerry Macpherson
IPC分类号： H01L21/285
摘要： An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
摘要翻译： 通过在晶体表面上设置两性掺杂剂层（3）并在该层中提供欧姆接触以形成非本征导电型III-V族半导体晶体（1）表面中的器件区， 在欧姆接触的所需位置处，能够赋予两性掺杂剂前述非本征导电类型的晶体元素原子的局部量，并加热该结构以将原子从该层扩散到该层的表面中 晶体形成欧姆接触。 加热时GaAs上的Si层通常形成整流触点。 如果Si层的区域含有As原子，则在加热时形成欧姆接触。
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公开(公告)号：EP0069206B1
公开(公告)日：1985-08-14
申请号：EP82103555.7
申请日：1982-04-27
IPC分类号： C30B25/02 , C30B29/38 , C04B35/58 , C01B21/082
CPC分类号： C30B25/02 , C04B35/581 , C30B29/10 , C30B29/38 , Y10S117/902
摘要： One or more single crystals (4) having a composition xSiC.(1-x)A l N where x is 0.2 to 0.5, are formed epitaxially on a substrate (5) of Al2O3 by heating sources of SiC (7) and AlN (8), disposed close to the substrate, at a temperature between 1900 and 2020 DEG C in the presence of N2 and H2 directed to flow over the sources of SiC and AlN towards the substrate.
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5.发明公开A method of forming an ohmic contact to a group III-V semiconductor and a semiconductor intermediate manufacturing product 失效形成与III-V族半导体和半导体中间体制造产品的OHMIC接触的方法
公开(公告)号：EP0200059A3
公开(公告)日：1989-02-22
申请号：EP86105004.5
申请日：1986-04-11
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rutz, Richard Frederick , Woodall, Jerry Macpherson
IPC分类号： H01L21/285
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
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6.发明公开A method of forming an ion implanted gallium arsenide device 失效Verfahren zur Herstellung einer Anordnung mit implantiertem GaAs。
公开(公告)号：EP0193021A1
公开(公告)日：1986-09-03
申请号：EP86101712.7
申请日：1986-02-11
IPC分类号： H01L21/314 , H01L21/324
CPC分类号： H01L21/3245 , H01L21/314 , Y10S148/084 , Y10S438/902
摘要： A silicon layer (16), preferably 10 to 1000 nm thick, is used as a capping layer during the annealing of an ion implanted gallium arsenide substrate (12, 14). After the annealing, the silicon capping layer can be removed by means of a fluoride-based etchant. The silicon cap prevents out-diffusion of arsenic from the GaAs, and has a coefficient of thermal expansion which is sufficiently close to that of the GaAs to inhibit the formation of cracks in the capping layer.
摘要翻译： 在离子注入的砷化镓衬底（12,14）的退火期间，使用硅层（16），优选为10至1000nm厚度作为覆盖层。 退火之后，可以通过基于氟化物的蚀刻剂除去硅封盖层。 硅帽防止砷从GaAs的扩散扩散，并且具有足够接近GaAs的热膨胀系数以抑制覆盖层中的裂纹的形成。
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公开(公告)号：EP0067947B1
公开(公告)日：1985-08-21
申请号：EP82103879.1
申请日：1982-05-05
IPC分类号： C04B41/00
CPC分类号： C04B41/009 , C04B41/53 , C04B41/91 , C04B35/00
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公开(公告)号：EP0067947A3
公开(公告)日：1983-08-24
申请号：EP82103879
申请日：1982-05-05
IPC分类号： C04B41/00
CPC分类号： C04B41/009 , C04B41/53 , C04B41/91 , C04B35/00
摘要： A refractory oxide substrate (1), for example of Al 2 O 3 (sapphire), SiO 2 , MgO or Al 2 MgO 4 (spinel) is provided with a recess (5) to precise dimensions by using a preformed member (2) having a higher melting temperature than 1500°C in the outline of the desired shape and placed in contact with the substrate, the combination being raised to a temperature between 1500°C and the melting temperature of the preformed member and below the melting temperature of the substrate, in the presence of a gas atmosphere containing an inert gas and approximately 15% hydrogen. The refractory oxide is etched over the area of contact. The preform can be titanium, tantalum, zirconium, hafnium, which can be easily shaped compared to the substrate material. Integrated circuit substrates, ink jet or optical apertures, and print elements, are examples of use.
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公开(公告)号：EP0069206A1
公开(公告)日：1983-01-12
申请号：EP82103555.7
申请日：1982-04-27
IPC分类号： C30B25/02 , C30B29/38 , C04B35/58 , C01B21/082
CPC分类号： C30B25/02 , C04B35/581 , C30B29/10 , C30B29/38 , Y10S117/902
摘要： One or more single crystals (4) having a composition xSiC.(1-x)AfN where x is 0.2 to 0.5, are formed epitaxially on a substrate (5) of Al z O 3 by heating sources of SiC (7) and AIN (8), disposed close to the substrate, at a temperature between 1900 and 2020°C in the presence of N 2 and H 2 directed to flow over the sources of SiC and AIN towards the substrate.
摘要翻译： 通过SiC（7）和AlN（...）的加热源，在Al 2 O 3的基板（5）上外延地形成具有xSiC（1-x）A 1 N（1-x）A 1 N，其中x为0.2至0.5的一种或多种单晶（4） 8），在N2和H2的存在下在1900和2020℃之间的温度下靠近衬底放置，以便流过SiC和AlN源朝向衬底。
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10.发明公开Method of etching a shape in a refractory oxide material 失效Ätzungsverfahrenzur Herstellung einer Form in einem feuerfestem Oxyd-Material。
公开(公告)号：EP0067947A2
公开(公告)日：1982-12-29
申请号：EP82103879.1
申请日：1982-05-05
IPC分类号： C04B41/00
CPC分类号： C04B41/009 , C04B41/53 , C04B41/91 , C04B35/00
摘要： A refractory oxide substrate (1), for example of Al 2 O 3 (sapphire), SiO 2 , MgO or Al 2 MgO 4 (spinel) is provided with a recess (5) to precise dimensions by using a preformed member (2) having a higher melting temperature than 1500°C in the outline of the desired shape and placed in contact with the substrate, the combination being raised to a temperature between 1500°C and the melting temperature of the preformed member and below the melting temperature of the substrate, in the presence of a gas atmosphere containing an inert gas and approximately 15% hydrogen. The refractory oxide is etched over the area of contact. The preform can be titanium, tantalum, zirconium, hafnium, which can be easily shaped compared to the substrate material. Integrated circuit substrates, ink jet or optical apertures, and print elements, are examples of use.
摘要翻译： 通过使用具有比1500高的熔点的预成型件（2），具有例如Al 2 O 3（蓝宝石），SiO 2，MgO或Al 2 MgO 4（尖晶石）的难熔氧化物基体（1）具有精确尺寸的凹部（5） 在所需形状的轮廓中，将其与基底接触，将组合物升高到在预成型体的熔融温度和低于基材的熔融温度之间的温度下，在 含有惰性气体和约15％氢气的气体气氛。 难熔氧化物在接触区域上被蚀刻。 预成型件可以是钛，钽，锆，铪，与基底材料相比可以容易地成形。 集成电路基板，喷墨或光学孔和印刷元件是使用的示例。
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