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    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE
    1.
    发明公开
    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE 有权
    HALBLEITERBAUELEMENT，VERFAHREN ZUR HERSTELLUNG DAVON UND ALIPHATIS​​CHES POLYCARBONAT

    公开(公告)号：EP3086360A4

    公开(公告)日：2017-08-30

    申请号：EP14871269

    申请日：2014-12-16

    申请人： JAPAN ADVANCED INST OF SCIENCE AND TECH ,  SUMITOMO SEIKA CHEMICALS CO LTD

    发明人： INOUE SATOSHI ,  SHIMODA TATSUYA ,  FUJIMOTO NOBUTAKA ,  NISHIOKA KIYOSHI ,  KARASHIMA SHUICHI

    IPC分类号： H01L29/786 ,  C09D5/00 ,  C09D7/12 ,  C09D169/00 ,  H01L21/385 ,  H01L21/477 ,  H01L29/66

    CPC分类号： H01L29/78618 ,  C09D5/008 ,  C09D7/1216 ,  C09D7/61 ,  C09D169/00 ,  H01L21/385 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    摘要： It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

    摘要翻译： 本发明的一个目的是提供一种薄膜晶体管及其制造方法，该方法在真空或低压下不经过处理或不使用时可以容易地实现源/漏区的自对准形成 昂贵的设备。 根据本发明的用于制造薄膜晶体管的示例性方法包括：形成脂肪族聚碳酸酯层50的脂肪族聚碳酸酯层形成步骤，所述脂肪族聚碳酸酯层50覆盖设置在半导体层20上方的栅极电极层40，栅极绝缘体30介于栅极 电极层40和半导体层20，并且还覆盖半导体层20，并且具有使半导体层20变成n型或p型半导体层的掺杂剂，以及在导致引入的温度下加热的加热步骤 的掺杂剂进入半导体层20并分解脂族聚碳酸酯层50。