公开(公告)号：EP3128525A4

公开(公告)日：2017-12-27

申请号：EP15773428

申请日：2015-03-19

申请人： SUMITOMO SEIKA CHEMICALS CO LTD ,  AIST

发明人： KINPARA YUJI ,  FUJISHIGE JUNICHI ,  FUJIMOTO NOBUTAKA ,  KARASHIMA SHUICHI ,  MUKAI TAKASHI ,  SAKAI TETSUO

IPC分类号： H01G11/38 ,  C08F216/06 ,  C08F218/08 ,  C08F220/06 ,  C08F220/14 ,  C08F261/04 ,  C09D129/04 ,  C09D133/02 ,  H01G11/24 ,  H01G11/30 ,  H01M4/62

CPC分类号： H01G11/38 ,  C08F218/08 ,  C08F220/14 ,  C08F261/04 ,  C09D133/02 ,  H01G11/30 ,  H01M4/622 ,  Y02E60/13 ,  Y02T10/7022 ,  C08F220/06

摘要： A binder for an electric double-layer capacitor electrode according to the present invention includes a copolymer of vinyl alcohol and an alkali metal-neutralized product of ethylene-unsaturated carboxylic acid.

公开(公告)号：EP3086360A4

公开(公告)日：2017-08-30

申请号：EP14871269

申请日：2014-12-16

申请人： JAPAN ADVANCED INST OF SCIENCE AND TECH ,  SUMITOMO SEIKA CHEMICALS CO LTD

发明人： INOUE SATOSHI ,  SHIMODA TATSUYA ,  FUJIMOTO NOBUTAKA ,  NISHIOKA KIYOSHI ,  KARASHIMA SHUICHI

IPC分类号： H01L29/786 ,  C09D5/00 ,  C09D7/12 ,  C09D169/00 ,  H01L21/385 ,  H01L21/477 ,  H01L29/66

CPC分类号： H01L29/78618 ,  C09D5/008 ,  C09D7/1216 ,  C09D7/61 ,  C09D169/00 ,  H01L21/385 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

摘要翻译： 本发明的一个目的是提供一种薄膜晶体管及其制造方法，该方法在真空或低压下不经过处理或不使用时可以容易地实现源/漏区的自对准形成 昂贵的设备。 根据本发明的用于制造薄膜晶体管的示例性方法包括：形成脂肪族聚碳酸酯层50的脂肪族聚碳酸酯层形成步骤，所述脂肪族聚碳酸酯层50覆盖设置在半导体层20上方的栅极电极层40，栅极绝缘体30介于栅极 电极层40和半导体层20，并且还覆盖半导体层20，并且具有使半导体层20变成n型或p型半导体层的掺杂剂，以及在导致引入的温度下加热的加热步骤 的掺杂剂进入半导体层20并分解脂族聚碳酸酯层50。