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1.发明公开Diamond interconnection substrate and a manufacturing method therefor 有权Methode zur Herstellung eines Diamant-Verbindungssubstrats
公开(公告)号：EP1119045A2
公开(公告)日：2001-07-25
申请号：EP01300474.2
申请日：2001-01-19
发明人： Nishibayashi, Yoshiki, c/o Itami Works , Matsuura, Takashi, c/o Itami Works , Imai, Takahiro, c/o Itami Works
IPC分类号： H01L23/373 , H01L21/48
CPC分类号： H01L23/3732 , H01L21/4846 , H01L23/49894 , H01L2924/0002 , H05K3/14 , H01L2924/00
摘要： A diamond interconnection substrate (10) of the present invention includes a diamond substrate (1), and an implantation layer (2, 3, 4) constituted by the presence of metal elements having a thickness of at least 10 nm and a concentration of at least 10 20 cm -3 in the diamond substrate (1). The implantation layer (2, 3, 4) is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 10 16 cm -2 . Thus, a technique is provided by which a multi-layer interconnection is realized in the diamond having the highest thermal conductivity of all materials.
摘要翻译： 本发明的金刚石互连衬底（10）包括金刚石衬底（1）和由厚度至少为10nm的金属元素的存在而形成的注入层（2,3,4） 在金刚石基底（1）中至少10 20 cm -3。 通过离子注入具有至少1MeV的高能量水平和至少10 16 cm -2的高剂量的金属元素形成注入层（2,3,4）。 因此，提供了一种在具有所有材料的最高热导率的金刚石中实现多层互连的技术。
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公开(公告)号：EP1119045B1
公开(公告)日：2010-06-30
申请号：EP01300474.2
申请日：2001-01-19
发明人： Nishibayashi, Yoshiki, c/o Itami Works , Matsuura, Takashi, c/o Itami Works , Imai, Takahiro, c/o Itami Works
IPC分类号： H01L23/373 , H01L21/48 , H01L23/498
CPC分类号： H01L23/3732 , H01L21/4846 , H01L23/49894 , H01L2924/0002 , H05K3/14 , H01L2924/00
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公开(公告)号：EP1119045A3
公开(公告)日：2007-11-07
申请号：EP01300474.2
申请日：2001-01-19
发明人： Nishibayashi, Yoshiki, c/o Itami Works , Matsuura, Takashi, c/o Itami Works , Imai, Takahiro, c/o Itami Works
IPC分类号： H01L23/373 , H01L21/48 , H01L23/498
CPC分类号： H01L23/3732 , H01L21/4846 , H01L23/49894 , H01L2924/0002 , H05K3/14 , H01L2924/00
摘要： A diamond interconnection substrate (10) of the present invention includes a diamond substrate (1), and an implantation layer (2, 3, 4) constituted by the presence of metal elements having a thickness of at least 10 nm and a concentration of at least 10 20 cm -3 in the diamond substrate (1). The implantation layer (2, 3, 4) is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 10 16 cm -2 . Thus, a technique is provided by which a multi-layer interconnection is realized in the diamond having the highest thermal conductivity of all materials.
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公开(公告)号：EP0462600B1
公开(公告)日：1995-12-27
申请号：EP91110091.5
申请日：1991-06-19
发明人： Itozaki, Hideo, c/o Itami Works , Hattori, Hisao, c/o Itami Works , Harada, Keizo, c/o Itami Works , Matsuura, Takashi, c/o Itami Works
CPC分类号： C23C14/34 , C23C14/50 , H01L39/2435
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公开(公告)号：EP0459906A3
公开(公告)日：1992-04-01
申请号：EP91401408.9
申请日：1991-05-30
发明人： Tanaka, Saburo, c/o Itami Works , Nakanishi, Hidenori, c/o Itami Works , Itozaki, Hideo, c/o Itami Works , Matsuura, Takashi, c/o Itami Works
CPC分类号： H01L39/2496
摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400°C during the non-superconducting intermediate thin film layer is deposited.
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公开(公告)号：EP0573340B1
公开(公告)日：1998-05-13
申请号：EP93401378.0
申请日：1993-05-28
发明人： Tanaka, Saburo, c/o Itami Works , Matsuura, Takashi, c/o Itami Works , Itozaki, Hideo, c/o Itami Works
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702
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公开(公告)号：EP0465325A3
公开(公告)日：1992-04-15
申请号：EP91401777.7
申请日：1991-06-28
发明人： Matsuura, Takashi, c/o Itami Works , Higaki, Kenjiro, c/o Itami Works , Itozaki, Hideo, c/o Itami Works
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731
摘要： A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by physical vapour deposition. At first, an under-layer of an oxide having a thickness of 50 to 200 Å is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500 °C, and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600 °C.
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8.发明公开Process for preparing thin film of oxyde superconductor 失效Verfahren zur HerstellungdünnerSchichten aus Oxyd-Supraleiter。
公开(公告)号：EP0465325A2
公开(公告)日：1992-01-08
申请号：EP91401777.7
申请日：1991-06-28
发明人： Matsuura, Takashi, c/o Itami Works , Higaki, Kenjiro, c/o Itami Works , Itozaki, Hideo, c/o Itami Works
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731
摘要： A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by physical vapour deposition. At first, an under-layer of an oxide having a thickness of 50 to 200 Å is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500 °C, and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600 °C.
摘要翻译： 通过物理气相沉积在半导体的单晶衬底上制备氧化物超导体薄膜的方法。 首先，在低于500℃的衬底温度下，在半导体的单晶衬底上沉积厚度为50至200的氧化物的底层，其次沉积超导氧化物材料的上层 在衬底温度高于600℃的所述底层上。
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公开(公告)号：EP0567386A3
公开(公告)日：1994-09-28
申请号：EP93401012.5
申请日：1993-04-20
IPC分类号： G01R33/035 , H01L39/24
CPC分类号： G01R33/0358 , Y10S505/846
摘要： 57 A magnetism sensor comprises a substrate, a SQUID including a washer of an oxide superconductor thin film formed on a principal surface of the substrate, a hole shaped a similar figure to the washer at the center of the washer, a slit formed between one side of the washer and the hole and a Josephson junction by which portions of the washer at the both sides of the slit are connected across the slit. The magnetism sensor further comprises a superconducting flux transformer of an oxide superconductor thin film including an input coil arranged on the SQUID but isolated from the SQUID and a pickup coil arranged on the principal surface of the substrate far from the SQUID, which are connected in parallel and a magnetism shield which excludes flux penetrating into the Josephson junction of the SQUID.
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10.发明授权
公开(公告)号：EP0567386B1
公开(公告)日：2000-11-22
申请号：EP93401012.5
申请日：1993-04-20
IPC分类号： G01R33/035 , H01L39/24
CPC分类号： G01R33/0358 , Y10S505/846
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