公开(公告)号：EP1038996B1

公开(公告)日：2007-09-05

申请号：EP99943276.8

申请日：1999-09-10

申请人： Japan Science and Technology Agency ,  Kawasaki, Masashi

发明人： KAWASAKI, Masashi Tokyo Inst. Tech ,  KOINUMA, Hideomi Tokyo Inst. Tech

IPC分类号： C30B23/08 ,  H01L21/203 ,  C30B23/02

CPC分类号： B01J19/0046 ,  B01J2219/00443 ,  B01J2219/00445 ,  B01J2219/00495 ,  B01J2219/00527 ,  B01J2219/00536 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00745 ,  B01J2219/00747 ,  C30B23/002 ,  C40B30/08 ,  C40B40/18 ,  C40B60/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A combinatorial molecular layer epitaxy device comprising a pressure-controllable common chamber (22), at least one transferable substrate heating unit (36) having in the common chamber a substrate holder (48) holding at least one substrate and at least one pressure-controllable processing chamber (24, 26, 28) each corresponding to a substrate heating unit, wherein a growth chamber (24) out of processing chambers has a multiple-material supply means for supplying materials to substrates (5) held by each substrate heating unit, a gas supply means for supplying gas onto the surfaces of substrates, and an on-site observation means for observing on-site an epitaxial growth for each monolayer on a substrate surface, whereby forming each temperature-and pressure-controllable vacuum chamber by each substrate heating unit and each processing chamber.

公开(公告)号：EP1038996A1

公开(公告)日：2000-09-27

申请号：EP99943276.8

申请日：1999-09-10

申请人： Japan Science and Technology Corporation ,  Kawasaki, Masashi

发明人： KAWASAKI, Masashi Tokyo Inst. Tech ,  KOINUMA, Hideomi Tokyo Inst. Tech

IPC分类号： C30B23/08 ,  H01L21/203

CPC分类号： B01J19/0046 ,  B01J2219/00443 ,  B01J2219/00445 ,  B01J2219/00495 ,  B01J2219/00527 ,  B01J2219/00536 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00745 ,  B01J2219/00747 ,  C30B23/002 ,  C40B30/08 ,  C40B40/18 ,  C40B60/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units. The process conducting chambers includes a growth chamber (24) which has a multiple raw material supply means for supplying raw materials onto a substrate (5) held by a substrate heating unit, a gas supply means for feeding a gas onto a surface of the substrate, and an instantaneous observation means for instantaneously observing epitaxial growth of monomolecular layers for each of the layers on the substrate surface, thereby rendering the formation of vacuum chambers constituting from substrate heating unit and process conducting chambers, which are controllable in temperatures and pressures.

摘要翻译： 提供组合分子层外延装置，其包括其中具有压力可控的公共室（22） 一个或多个可输送基板加热单元（36），具有用于将一个或多个基板保持在公共室中的基板保持器（48） 以及一个或多个具有压力的过程传导室（24,26,28），其可控制并且被提供以对应于衬底加热单元。 工艺导电室包括生长室（24），其具有用于将原材料供应到由基板加热单元保持的基板（5）上的多个原料供给装置，用于将气体供给到基板的表面上的气体供给装置 以及用于瞬时观察基板表面上的每个层的单分子层的外延生长的瞬时观察装置，从而形成由温度和压力可控的基板加热单元和加工导电室构成的真空室。