公开(公告)号：EP0178170A3

公开(公告)日：1987-03-25

申请号：EP85307236

申请日：1985-10-09

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Baba, Hiroyuki c/o Patent Division ,  Matsuzaki, Takashi c/o Patent Division

IPC分类号： H01L23/48 ,  H01L21/60 ,  B23K20/22

CPC分类号： H01L24/85 ,  B23K20/2333 ,  H01L21/4825 ,  H01L23/495 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/85447 ,  H01L2224/85909 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/2076 ,  Y10S228/904 ,  Y10T29/49121 ,  H01L2924/01204 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01033

摘要： A semiconductor device in which an end of an aluminium bonding wire (23) is connected to a lead electrode (25) of copper or a copper alloy in a manner such that the thickness of a reaction layer (60) is 0.2 (micron) or more. In manufacture, heat treatment is effected to bring the reaction layer (60) to the desired thickness. The semiconductor device displays excellent electrical characteristics in high temperature conditions or in high temperature high humidity conditions.

摘要翻译： 一种半导体器件，其中铝接合线（23）的一端以使得反应层（60）的厚度为0.2（微米））的方式连接到铜或铜合金的引线电极（25）或 更多。 在制造中，进行热处理以使反应层（60）达到所需厚度。 该半导体器件在高温条件或高温高湿条件下显示出优良的电气特性。