公开(公告)号：EP0513521A3

公开(公告)日：1993-07-14

申请号：EP92105953.1

申请日：1992-04-07

申请人： International Business Machines Corporation

发明人： Conru, Ward H. ,  Irish, Gary Hugh ,  Pakulski, Francis Joseph ,  Slattery, William John ,  Starr, Stephen George ,  Ward, William Caroll

IPC分类号： H01L21/50 ,  H01L21/60 ,  H01L23/24 ,  H01L23/495 ,  H01L25/065

CPC分类号： H01L24/32 ,  H01L21/56 ,  H01L23/4951 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/85909 ,  H01L2224/92147 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06579 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/85399

摘要： This is a semiconductor chip (12) in which the conductive path between the chip and the lead frame (14) via wires (16) can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer (11b) on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive (17) and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

公开(公告)号：EP0540189A2

公开(公告)日：1993-05-05

申请号：EP92309080.7

申请日：1992-10-05

申请人： F & K Delvotec Bondtechnik GmbH

发明人： Farassat, Farhad

IPC分类号： B23K20/10 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/10 ,  B23K31/125 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4847 ,  H01L2224/78313 ,  H01L2224/85009 ,  H01L2224/85205 ,  H01L2224/859 ,  H01L2224/85909 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A wire-bonding process for bonding a wire 8 to a contact surface of an electrical or electronic component 10, comprises supplying ultrasonic energy to a bonding tool 2 mounted on an ultrasonic transducer 6, the bonding tool 2 being arranged to press the wire 8 against the contact surface of the electrical or electronic component 10, and monitoring the deformation of the wire 8. The level and duration of the supply of ultrasonic energy and optionally the magnitude of the bonding force are continuously controlled during the bonding process in response to the deformation of the wire, in a closed loop system.

摘要翻译： 用于将导线8接合到电气或电子部件10的接触表面的引线接合工艺包括向安装在超声波换能器6上的接合工具2提供超声波能量，所述接合工具2布置成将电线8按压 电气或电子部件10的接触表面，并且监测线材8的变形。响应于变形而在接合过程期间连续地控制供应超声能量的水平和持续时间以及可选地的接合力的大小 的电线，在闭环系统中。

公开(公告)号：EP0513521A2

公开(公告)日：1992-11-19

申请号：EP92105953.1

申请日：1992-04-07

申请人： International Business Machines Corporation

发明人： Conru, Ward H. ,  Irish, Gary Hugh ,  Pakulski, Francis Joseph ,  Slattery, William John ,  Starr, Stephen George ,  Ward, William Caroll

IPC分类号： H01L21/50 ,  H01L21/60 ,  H01L23/24 ,  H01L23/495 ,  H01L25/065

CPC分类号： H01L24/32 ,  H01L21/56 ,  H01L23/4951 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/85909 ,  H01L2224/92147 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06579 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/85399

摘要： This is a semiconductor chip (12) in which the conductive path between the chip and the lead frame (14) via wires (16) can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point.
This is accomplished by placing an insulating layer (11b) on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive (17) and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

摘要翻译： 这是一种半导体芯片（12），其中通过导线（16）在芯片和引线框架（14）之间的导电路径可以容易且可再现地改善。 这是通过改进电线和引线框架构件之间的接合来实现的，并且通过在每个电线和其相应引线之间产生附加接触，即使接合的接触在接合点处或在紧邻接点处断裂或失效。 这通过将绝缘层（11b）放置在每个芯片的有源表面上，在其上承载有引线框架导体已经通过接合线连接的输入和输出接合焊盘来实现。 绝缘层是热固性粘合剂（17），并且放置在引线框架，接合线和半导体芯片的有源面之上，使得当层压力施加到绝缘层时，电线将被压碎并保持在其上 相应的焊盘和与它们连接的相应引线相对，并且半导体被保护的有源面通过粘合剂粘合到其上。 以这种方式，电线和引线之间的更大的接触增强，并且导电性的缺陷或故障减少或消除。

公开(公告)号：EP2530708A1

公开(公告)日：2012-12-05

申请号：EP11734655.1

申请日：2011-01-19

申请人： Japan Aviation Electronics Industry, Limited

发明人： UCHIDA, Daisuke

IPC分类号： H01L21/60 ,  H01L21/607 ,  H05K3/32

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/13005 ,  H01L2224/13124 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78302 ,  H01L2224/78314 ,  H01L2224/78318 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/85909 ,  H01L2224/85947 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3656 ,  H05K3/328 ,  H05K2201/10674 ,  H05K2201/10992 ,  H01L2224/0558 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00012

摘要： When a flip-chip mounting component with an Al/Au bonding structure is exposed to high temperature, voids may be caused in the Al electrode. The generation of voids causes failed connection or failed bonding between the Al electrode and the Au bump, thereby significantly degrading the connection reliability and bonding reliability in the flip-chip mounting structure. An object of the preset invention is to provide a flip-chip mounting structure that has high connection reliability and bonding reliability without being degraded even in high temperature. In a flip-chip mounting structure for wirelessly connecting an IC chip 21 having an Al electrode 22 and a substrate 41 having an Au electrode 43, a bump 52 of Al or Al alloy is formed on the Al electrode 22 of the IC chip 21 and, via the bump 52, the Al electrode 22 of the IC chip 21 and the Au electrode 43 of the substrate 41 are bonded to each other.

摘要翻译： 当具有Al / Au键合结构的倒装芯片安装部件暴露于高温时，可能在Al电极中引起空隙。 空隙的产生导致Al电极和Au凸块之间的连接失败或接合不良，从而显着降低了倒装芯片安装结构中的连接可靠性和接合可靠性。 本发明的目的是提供一种倒装芯片安装结构，即使在高温下也不会降低连接可靠性和接合可靠性。 在用于无线连接具有Al电极22的IC芯片21和具有Au电极43的基板41的倒装芯片安装结构中，在IC芯片21的Al电极22上形成Al或Al合金的凸起52， 通过凸块52，IC芯片21的Al电极22和基板41的Au电极43彼此接合。

公开(公告)号：EP0736757B1

公开(公告)日：1999-01-07

申请号：EP96104684.4

申请日：1996-03-25

申请人： MOTOROLA, INC.

发明人： Maudie, Theresa A. ,  Monk, David J. ,  Savage, Timothy S.

IPC分类号： G01L19/06 ,  G01D11/24

CPC分类号： G01L19/0627 ,  G01L19/141 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/16195 ,  H01L2924/181 ,  Y10T29/49776 ,  H01L2924/00014 ,  H01L2924/05042 ,  H01L2924/04642 ,  H01L2924/00

公开(公告)号：EP0601323A1

公开(公告)日：1994-06-15

申请号：EP93117486.6

申请日：1993-10-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Zechman, John Harold

IPC分类号： H01L23/31 ,  H01L23/64 ,  H01L23/49

CPC分类号： H01L24/85 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/552 ,  H01L23/642 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/6622 ,  H01L2224/05601 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4557 ,  H01L2224/456 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/85815 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/30107 ,  Y10T29/49171 ,  H01L2924/06 ,  H01L2924/20656 ,  H01L2924/20657 ,  H01L2924/20658 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00012 ,  H01L2924/01006

摘要： A composite containing an integrated circuit chip (1) having conductive site (3) thereon and electrically conductive leads (5) that are interconnected to the conductive site by electrically conductive wire (4); wherein the wire is coated with a dielectric material parylene (6).

摘要翻译： 一种包含其上具有导电部位（3）的集成电路芯片（1）和通过导电线（4）互连到导电部位的导电引线（5）的复合材料; 其中所述线被电介质材料聚对二甲苯（6）涂覆。

公开(公告)号：EP2530708A4

公开(公告)日：2014-01-22

申请号：EP11734655

申请日：2011-01-19

申请人： JAPAN AVIATION ELECTRON

发明人： UCHIDA DAISUKE

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/1184 ,  H01L2224/13005 ,  H01L2224/13124 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78302 ,  H01L2224/78314 ,  H01L2224/78318 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/85909 ,  H01L2224/85947 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3656 ,  H05K3/328 ,  H05K2201/10674 ,  H05K2201/10992 ,  H01L2224/0558 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00015

摘要： When a flip-chip mounting component with an Al/Au bonding structure is exposed to high temperature, voids may be caused in the Al electrode. The generation of voids causes failed connection or failed bonding between the Al electrode and the Au bump, thereby significantly degrading the connection reliability and bonding reliability in the flip-chip mounting structure. An object of the preset invention is to provide a flip-chip mounting structure that has high connection reliability and bonding reliability without being degraded even in high temperature. In a flip-chip mounting structure for wirelessly connecting an IC chip 21 having an Al electrode 22 and a substrate 41 having an Au electrode 43, a bump 52 of Al or Al alloy is formed on the Al electrode 22 of the IC chip 21 and, via the bump 52, the Al electrode 22 of the IC chip 21 and the Au electrode 43 of the substrate 41 are bonded to each other.

公开(公告)号：EP0821406A3

公开(公告)日：2000-03-22

申请号：EP97112463.1

申请日：1997-07-21

申请人： CHECKPOINT SYSTEMS, INC.

发明人： Isaacson, Mark R. ,  Piccoli, Anthony F. ,  Holloway, Michael

IPC分类号： H01L21/60 ,  H01L23/64

CPC分类号： H01L24/80 ,  B32B2519/02 ,  G06K19/0726 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/145 ,  H01L23/642 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/85205 ,  H01L2224/85909 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/20753 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T29/49162 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of electrically connecting an integrated circuit (IC (14)) to at least one electrical conductor on a flexible dielectric substrate (26) having an IC attachment area (36) and at least one resonant circuit formed thereon. The resonant circuit is formed with two conductive patterns disposed on two opposite principal surfaces of the flexible substrate (26). The conductive patterns are electrically connected to each other to form an inductor (22) and a capacitor, with the inductor (22) also functioning as an antenna. The IC attachment area (36) of the flexible substrate (26) is cleaned and the latter is secured in a fixed position in a plenum to prevent substantial movement thereof. The IC (14) is secured to the IC attachment area (36). Wire bonding of the IC (14) to at least one electrical conductor (38, 40, 42) of the resonant circuit is performed. A protective covering is applied over the IC (14) and the wire bond to protect the wire bond from being damaged by external forces.

摘要翻译： 一种将集成电路（IC（14））电连接到具有IC附接区域（36）的柔性电介质基板（26）上的至少一个电导体和形成在其上的至少一个谐振电路的方法。 谐振电路形成有设置在柔性基板（26）的两个相对的主表面上的两个导电图案。 导电图案彼此电连接以形成电感器（22）和电容器，电感器（22）也用作天线。 柔性基板（26）的IC附接区域（36）被清洁，后者被固定在集气室中的固定位置，以防止其大幅移动。 IC（14）固定到IC附接区域（36）。 执行IC（14）到谐振电路的至少一个电导体（38,40,42）的引线接合。 在IC（14）和引线接合处施加保护覆盖物，以保护引线接合不被外力损坏。

公开(公告)号：EP0821406A2

公开(公告)日：1998-01-28

申请号：EP97112463.1

申请日：1997-07-21

申请人： CHECKPOINT SYSTEMS, INC.

发明人： Isaacson, Mark R. ,  Piccoli, Anthony F. ,  Holloway, Michael

IPC分类号： H01L21/60 ,  H01L23/64

CPC分类号： H01L24/80 ,  B32B2519/02 ,  G06K19/0726 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/145 ,  H01L23/642 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/85205 ,  H01L2224/85909 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/20753 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T29/49162 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of electrically connecting an integrated circuit (IC (14)) to at least one electrical conductor on a flexible dielectric substrate (26) having an IC attachment area (36) and at least one resonant circuit formed thereon. The resonant circuit is formed with two conductive patterns disposed on two opposite principal surfaces of the flexible substrate (26). The conductive patterns are electrically connected to each other to form an inductor (22) and a capacitor, with the inductor (22) also functioning as an antenna. The IC attachment area (36) of the flexible substrate (26) is cleaned and the latter is secured in a fixed position in a plenum to prevent substantial movement thereof. The IC (14) is secured to the IC attachment area (36). Wire bonding of the IC (14) to at least one electrical conductor (38, 40, 42) of the resonant circuit is performed. A protective covering is applied over the IC (14) and the wire bond to protect the wire bond from being damaged by external forces.

公开(公告)号：EP0178170A3

公开(公告)日：1987-03-25

申请号：EP85307236

申请日：1985-10-09

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Baba, Hiroyuki c/o Patent Division ,  Matsuzaki, Takashi c/o Patent Division

IPC分类号： H01L23/48 ,  H01L21/60 ,  B23K20/22

CPC分类号： H01L24/85 ,  B23K20/2333 ,  H01L21/4825 ,  H01L23/495 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/85447 ,  H01L2224/85909 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/2076 ,  Y10S228/904 ,  Y10T29/49121 ,  H01L2924/01204 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01033

摘要： A semiconductor device in which an end of an aluminium bonding wire (23) is connected to a lead electrode (25) of copper or a copper alloy in a manner such that the thickness of a reaction layer (60) is 0.2 (micron) or more. In manufacture, heat treatment is effected to bring the reaction layer (60) to the desired thickness. The semiconductor device displays excellent electrical characteristics in high temperature conditions or in high temperature high humidity conditions.

摘要翻译： 一种半导体器件，其中铝接合线（23）的一端以使得反应层（60）的厚度为0.2（微米））的方式连接到铜或铜合金的引线电极（25）或 更多。 在制造中，进行热处理以使反应层（60）达到所需厚度。 该半导体器件在高温条件或高温高湿条件下显示出优良的电气特性。