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    Heterojunction bipolar transistor having an emitter region with a band gap greater than that of a base region
    3.
    发明公开
    Heterojunction bipolar transistor having an emitter region with a band gap greater than that of a base region 失效
    双极异质结晶体管具有的发射极区域，其带隙比基极区域更大。

    公开(公告)号：EP0186305A1

    公开(公告)日：1986-07-02

    申请号：EP85308460.6

    申请日：1985-11-20

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yoshida, Jiro c/o Patent Division ,  Azuma, Makoto c/o Patent Division

    IPC分类号： H01L29/08 ,  H01L29/36 ,  H01L29/72

    CPC分类号： H01L29/7371

    摘要： A heterojunction bipolar transistor comprises a base region (14) of a first conductivity type formed of a first kind of semiconductor material, an emitter region (18) of a second conductivity type formed of a second kind of semiconductor material which has a band gap greater than that of the first kind of semiconductor material and a smaller electron affinity, a transition region (16) formed between the base region (14) and the emitter region (18), and a collector region (12) formed adjacent to the base region (14). The transition region (16) is formed of a plurality of semiconductor layers such that band gaps sequentially increase in a stepped fashion from the semiconductor layer adjacent to the base region toward the semiconductor layer adjacent to the emitter region. The transition region (16) is formed of a semiconductor material havng an intermediate composition between the composition of the first kind of semiconductor material and that of the second kind of semiconductor material.

    摘要翻译： 异质结双极晶体管包括形成在第一类型半导体材料的第一导电型的基极区域（14），形成有第二类半导体材料构成的第二导电类型的发射极区（18），其具有大的带隙 比第一种半导体材料制成，并且更小的电子亲和力，过渡区域（16）的基极区域（14）和发射极区（18），且形成为与所述基极区域的集电极区域（12）之间形成的 （14）。 所述过渡区域（16）形成检查没带隙顺序地以阶梯方式从所述半导体层相邻的朝向半导体层毗邻发射极区域的基极区域增加半导体层的多个。 所述过渡区域（16）形成到havng第一种半导体材料的组合物之间的中间组合物的半导体材料的，也做了第二种半导体材料构成。