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1.发明公开Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 审中-公开从气相处理的无机氧化物颗粒和抛光浆料，和处理的水的固体载用于生产半导体器件
公开(公告)号：EP1020506A3
公开(公告)日：2001-10-10
申请号：EP00100845.7
申请日：2000-01-17
发明人： Yano, Hiroyuki , Hayasaka, Nobuo , Okumura, Katsuya , Iio, Akira , Hattori, Masayuki , Kubota, Kiyonobu
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm 3 in bulk density and within a range of 0.5 to 100 mm⊘ in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0µm.
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2.发明公开Method and system of manufacturing slurry for polishing, and method and system of manufacturing semiconductor devices 审中-公开用于抛光的浆料的制造方法和装置，以及一种用于制造半导体器件的方法和装置
公开(公告)号：EP1036632A3
公开(公告)日：2001-09-19
申请号：EP00105725.6
申请日：2000-03-17
摘要： A manufacturing system of semiconductor devices, which comprises a dispersing equipment (22) for dispersing inorganic oxide with water, a filtrating equipment (25) provided behind the dispersing equipment (22) for filtrating the slurry sent from the dispersing equipment (22), a supplying equipment (32) provided behind the filtrating equipment (25) for supplying the slurry sent from the filtrating equipment (25) to a CMP polishing equipment (33), and the CMP polishing equipment (33) provided behind the supplying equipment (32) for polishing semiconductor devices by using the slurry supplied from the supplying equipment. According to the present invention, it is possible to supply slurry to the CMP polishing equipment at the right time in the right quantity. Accordingly, it is possible to eliminate the cost incurred by performing the strict quality control of the slurry during the storage.
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3.发明公开Method and system of manufacturing slurry for polishing, and method and system of manufacturing semiconductor devices 审中-公开用于抛光的浆料的制造方法和装置，以及一种用于制造半导体器件的方法和装置
公开(公告)号：EP1036632A2
公开(公告)日：2000-09-20
申请号：EP00105725.6
申请日：2000-03-17
摘要： A manufacturing system of semiconductor devices, which comprises a dispersing equipment (22) for dispersing inorganic oxide with water, a filtrating equipment (25) provided behind the dispersing equipment (22) for filtrating the slurry sent from the dispersing equipment (22), a supplying equipment (32) provided behind the filtrating equipment (25) for supplying the slurry sent from the filtrating equipment (25) to a CMP polishing equipment (33), and the CMP polishing equipment (33) provided behind the supplying equipment (32) for polishing semiconductor devices by using the slurry supplied from the supplying equipment.
According to the present invention, it is possible to supply slurry to the CMP polishing equipment at the right time in the right quantity. Accordingly, it is possible to eliminate the cost incurred by performing the strict quality control of the slurry during the storage.摘要翻译： 用于过滤从分散设备（22）发送的所述浆料中提供的分散设备（22）的后面的半导体器件的制造系统，该系统用于无机氧化物与水分散包括分散设备（22），过滤装置（25），一个 用于将从过滤装置（25）发送的所述浆料的供给设备后方的CMP抛光设备（33）和CMP抛光设备（33）供应所述过滤装置（25）的后面提供的设备（32），（32） 用于通过使用从供给设备供给的浆料抛光的半导体器件。 。根据本发明，能够在正确的时间在合适的量供给至浆料在CMP抛光设备。 因此，可以消除由所述存储过程中进行的浆料的严格的质量控制产生的成本。
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4.发明公开Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 审中-公开从气相处理的无机氧化物颗粒和抛光浆料，和处理的水的固体载用于生产半导体器件
公开(公告)号：EP1020506A2
公开(公告)日：2000-07-19
申请号：EP00100845.7
申请日：2000-01-17
发明人： Yano, Hiroyuki , Hayasaka, Nobuo , Okumura, Katsuya , Iio, Akira , Hattori, Masayuki , Kubota, Kiyonobu
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry.
Said water-laden solid matter is within a range of 0.3 to 3 g/cm 3 in bulk density and within a range of 0.5 to 100 mm⌀ in average particle size when manufactured granular.
Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0µm.摘要翻译： 水载货固体物质通过添加水40〜300重量份的煅制工艺或金属蒸镀氧化工艺合成的无机氧化物粒子100组重量份中提供的所有被获得，抛光浆料中提供的所有其制造通过使用水 加载固体物质，并使用上述浆料的制造半导体器件的方法。 所述水载货固体物质是在堆积密度的范围为0.3〜3克/厘米<3>粒状内，并且范围在平均粒径0.5至100mm直径内制造时。 所述用于抛光浆料从水载货固体物质制造，并且分散在水中后其平均粒径是一个范围的0:05至1.0微米范围内。
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5.发明公开Method of treating substrate and apparatus for the same 失效Substrat-Behandlungsverfahren und Vorrichtungdafür
公开(公告)号：EP0858099A2
公开(公告)日：1998-08-12
申请号：EP98105839.9
申请日：1991-10-18
发明人： Okumura, Katsuya
IPC分类号： H01L21/00
CPC分类号： H01L21/67023
摘要： A plane of a treatment liquid holder (113; 214; 312; 413; 516) having a number of through holes (110; 213; 309; 314) faces a treatment surface of a substrate (112; 217; 314; 412; 511). A treatment liquid (115; 216; 320; 415; 523) is held between the treatment surface and the liquid holder (113; 214; 312; 413; 516) by utilizing a surface tension of the treatment liquid (115; 216; 320; 415; 523). Since the treatment liquid (115; 216; 320; 415; 523) is applied only to the treatment surface, an extremely small amount of treatment liquid (115; 216; 320; 415; 523) suffices for the treatment. In addition, since a fresh treatment liquid can be used in every treatment, cross-contamination is suppressed and the treatment can be performed with safety at a low cost.
摘要翻译： 具有多个通孔（110; 213; 309; 314）的处理液体保持器（113; 214; 312; 413; 516）的平面面向衬底（112; 217; 314; 412; 511 ）。 处理液体（115; 216; 320; 415; 523）通过利用处理液体（115; 216; 320）的表面张力保持在处理表面和液体保持器（113; 214; 312; 413; 516）之间 ; 415; 523）。 由于处理液体（115; 216; 320; 415; 523）仅被施加到处理表面，因此极少量的处理液体（115; 216; 320; 415; 523）足以进行处理。 此外，由于在每次处理中可以使用新鲜处理液，因此可以以低成本安全地进行交叉污染并进行处理。
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公开(公告)号：EP0299505B1
公开(公告)日：1995-09-13
申请号：EP88111399.7
申请日：1988-07-15
发明人： Okumura, Katsuya
CPC分类号： H01L29/0847 , H01L29/66621 , H01L29/78 , Y10S148/053
摘要： A semiconductor device comprising three recessed portions (11, 12, 13; 32, 33, 34) formed at a very small pitch on the surface of a semiconductor substrate, remaining regions (14, 15; 35, 36) formed between these recessed portions as impurity diffused regions serving as the source and the drain, respectively, and a conductive region as a gate electrode formed through an insulating film within the central recessed portion (12; 33), and a method of manufacturing such a semiconductor device are disclosed. with this device, its gate length can be made shorter than that in the prior art and the junction leakage is reduced, resulting in miniaturization and an improvement in the characteristics.
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7.发明授权Interconnection structure of a semiconductor device and method of manufacturing the same 失效一种半导体器件及其它们的制备方法的互连结构。
公开(公告)号：EP0310108B1
公开(公告)日：1995-03-22
申请号：EP88116171.5
申请日：1988-09-30
发明人： Okumura, Katsuya , Shinki, Toshinori , Idaka, Toshiaki Toshiba Isogo Dairoku Ryo , Aoki, Riichirou
IPC分类号： H01L21/768 , H01L21/74
CPC分类号： H01L21/76877 , Y10S257/915
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8.发明授权A method and an apparatus for evaluating the gas purifying ability of a gas purifier 失效评估气体净化器的气体净化能力的方法和装置
公开(公告)号：EP0330175B1
公开(公告)日：1993-08-18
申请号：EP89103084.3
申请日：1989-02-22
发明人： Mori, Kazuya , Watanabe, Tohru , Okumura, Katsuya
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公开(公告)号：EP0360967B1
公开(公告)日：1993-07-28
申请号：EP89106904.9
申请日：1989-04-18
发明人： Tezaki, Atsumu , Okumura, Katsuya
IPC分类号： G01R31/28
CPC分类号： G01R31/2831
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10.发明公开Method of removing electric charge accumulated on a semiconductor substrate in ion implantation 失效在离子植入中在半导体衬底上积累电荷的方法
公开(公告)号：EP0424925A3
公开(公告)日：1992-04-15
申请号：EP90120432.1
申请日：1990-10-24
IPC分类号： H01L21/265 , H01J37/317
CPC分类号： H01L21/265 , H01J37/026 , H01J37/3171
摘要： Disclosed is a method of removing electric charges (28) accumulated on a semiconductor substrate (21) in ion implantation by irradiating a highly accelerated electron beam (15) with acceleration energy of 1 to 50 KeV into the portion irradiated with ion beams (11) when impurity layer is formed by implanting the ion beams (11) in the semiconductor substrate (21).
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