公开(公告)号：EP1020506A3

公开(公告)日：2001-10-10

申请号：EP00100845.7

申请日：2000-01-17

申请人： KABUSHIKI KAISHA TOSHIBA ,  JSR Corporation

发明人： Yano, Hiroyuki ,  Hayasaka, Nobuo ,  Okumura, Katsuya ,  Iio, Akira ,  Hattori, Masayuki ,  Kubota, Kiyonobu

IPC分类号： C09K3/14 ,  C09G1/02 ,  C01B33/14

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm 3 in bulk density and within a range of 0.5 to 100 mm⊘ in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0µm.

公开(公告)号：EP1416025A1

公开(公告)日：2004-05-06

申请号：EP03024809.0

申请日：2003-10-30

申请人： JSR Corporation ,  Kabushiki Kaisha Toshiba

发明人： Nishimoto, Kazuo ,  Sakano, Tatsuaki ,  Takemura, Akihiro ,  Hattori, Masayuki ,  Kawahashi, Nobuo ,  Miyashita, Naoto ,  Shigeta, Atsushi ,  Matsui, Yoshitaka ,  Ida, Kazuhiko

IPC分类号： C09G1/02 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/02024

摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device.
A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.
The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

摘要翻译： 在用于化学机械抛光wässrige分散体是通过在wässrige介质的水溶性季铵盐，无机酸和磨粒混入得到。 因此独立权利要求中包括了：（1）化学机械抛光工艺包括抛光与分散体的表面; （2）用于制造半导体装置，其包括抛光上与分散体半导电衬底的表面的方法; 和（3）用于制备水性分散体，其包括第一和第二wässrige分散材料的材料。

公开(公告)号：EP1020506A2

公开(公告)日：2000-07-19

申请号：EP00100845.7

申请日：2000-01-17

申请人： KABUSHIKI KAISHA TOSHIBA ,  JSR Corporation

发明人： Yano, Hiroyuki ,  Hayasaka, Nobuo ,  Okumura, Katsuya ,  Iio, Akira ,  Hattori, Masayuki ,  Kubota, Kiyonobu

IPC分类号： C09K3/14 ,  C09G1/02

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry.
Said water-laden solid matter is within a range of 0.3 to 3 g/cm 3 in bulk density and within a range of 0.5 to 100 mm⌀ in average particle size when manufactured granular.
Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0µm.

摘要翻译： 水载货固体物质通过添加水40〜300重量份的煅制工艺或金属蒸镀氧化工艺合成的无机氧化物粒子100组重量份中提供的所有被获得，抛光浆料中提供的所有其制造通过使用水 加载固体物质，并使用上述浆料的制造半导体器件的方法。 所述水载货固体物质是在堆积密度的范围为0.3〜3克/厘米<3>粒状内，并且范围在平均粒径0.5至100mm直径内制造时。 所述用于抛光浆料从水载货固体物质制造，并且分散在水中后其平均粒径是一个范围的0:05至1.0微米范围内。

公开(公告)号：EP1724317A1

公开(公告)日：2006-11-22

申请号：EP06113995.2

申请日：2006-05-16

申请人： JSR Corporation

发明人： Uchikura, Kazuhito ,  Konno, Tomohisa ,  Kawahashi, Nobuo ,  Hattori, Masayuki

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt% and the component (B) in an amount of 0.005 to 1.5 wt%, having a ratio (W A /W B ) of the amount (W A ) of the component (A) to the amount (W B ) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.

摘要翻译： 一种化学机械研磨用水系分散体，其中包括：（A）无机颗粒; （B）至少一种类型的选自有机颗粒和有机无机复合粒子中选择的粒子; （C）选自喹啉羧酸，喹啉酸，二价有机酸中的至少一种化合物（不含喹啉酸），和羟基酸; （D）选自苯并三唑和苯并三唑衍生物中选择的至少一种化合物; （E）与氧化剂; 和（F）水，化学机械研磨用水系分散体含有以0:05〜2.0％（重量）的组分（A）和0.005〜1.5％（重量）的组分（B），具有比（WA / WB ）组分（A），以0.1的组分（B）的量（WB）至200的量（WA），并且pH为1.0〜5.0的。

公开(公告)号：EP1700893A1

公开(公告)日：2006-09-13

申请号：EP06110799.1

申请日：2006-03-07

申请人： JSR Corporation

发明人： Uchikura, Kazuhito, JSR CORPORATION ,  Hattori, Masayuki ,  Kawahashi, Nobuo, JSR CORPORATION

IPC分类号： C09G1/02 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10wt%.

摘要翻译： 一种化学机械研磨用水系分散体，包括：研磨剂（A）; 有机酸的（B）; （C）苯并三唑或苯并三唑衍生物; （D）聚（甲基）丙烯酸酯; （E）与氧化剂; 和（F）水，研磨剂（A）被包括在在2至10重量％的量在所述化学机械抛光wässrige分散体。

公开(公告)号：EP1243611B1

公开(公告)日：2006-02-08

申请号：EP02010940.1

申请日：2000-11-21

申请人： JSR Corporation

发明人： Nishimoto, Kazuo ,  Hattori, Masayuki ,  Kawahashi, Nobuo

IPC分类号： C08J3/00 ,  C09G1/02 ,  H01L21/304 ,  C08J3/215 ,  C08K3/22

CPC分类号： C08J3/12 ,  C08J3/215 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1445 ,  C09K3/1454 ,  H01L21/31058 ,  H01L21/3212 ,  Y10T428/2991 ,  Y10T428/2995

公开(公告)号：EP1081200B1

公开(公告)日：2004-04-21

申请号：EP00119200.4

申请日：2000-09-05

申请人： JSR Corporation

发明人： Motonari, Masayuki ,  Hattori, Masayuki ,  Kawahashi, Nobuo

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  H01L21/3212

公开(公告)号：EP1357161A3

公开(公告)日：2003-12-03

申请号：EP03009035.1

申请日：2003-04-17

申请人： JSR Corporation

发明人： Hattori, Masayuki ,  Ando, Michiaki ,  Nishimoto, Kazuo ,  Kawahashi, Nobuo

IPC分类号： C09G1/02 ,  H01L21/3105

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices. The aqueous dispersion for chemical mechanical polishing comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium. The ceria particles, preservative and organic component are contained in proportions of 0.1 to 20 % by mass, 0.001 to 0.2 % by mass and 0.1 to 30 % by mass, respectively, when the total proportion of the aqueous medium, ceria particles, preservative and organic component is 100 % by mass. The pH of this aqueous dispersion can be kept in a neutral range.

公开(公告)号：EP1081200A1

公开(公告)日：2001-03-07

申请号：EP00119200.4

申请日：2000-09-05

申请人： JSR Corporation

发明人： Motonari, Masayuki ,  Hattori, Masayuki ,  Kawahashi, Nobuo

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer and an insulating film under the same conditions, the ratio (R Cu /R Ta ) between the polishing rate of the copper film (R Cu ) and the polishing rate of the tantalum layer and/or tantalum nitride layer (R Ta ) is no greater than 1/20, and the ratio (R Cu /R In ) between the polishing rate of the copper film (R Cu ) and the polishing rate of the insulating film (R In ) is from 5 to 1/5. R Cu /R Ta is preferably no greater than 1/30, especially no greater than 1/40 and most preferably no greater than 1/50, while R Cu /R In is preferably 4-1/4, especially 3-1/3 and more preferably 2-1/2.

摘要翻译： 本发明提供了关于用于化学机械抛光wässrige分散组合物中所有这对于不同类型的形成在半导体基片上的工作膜和阻挡金属层的抛光用于半导体器件的制造中哪些是有用的，并且，可以实现高效的抛光特别的阻挡金属表面 并能给出充分进行平坦化和高精度完成表面。 用于化学机械抛光的wässrige分散体组合物具有以下特性检查的是，当抛光铜电影，在相同条件下钽层和/或氮化钽层和在绝缘电影，的抛光速率之间的比率（R铜/ R Ta）的 铜电影（R Cu）的和钽层和/或氮化钽层（R Ta）的的抛光速率是不大于1.20，和（R铜/ RIN）的铜成膜的研磨速度（R Cu）的和之间的比 绝缘膜 - （RIN）的研磨速度为5〜5.1。 ř的Cu / R Ta为优选不大于爱尤其是不1/40大于1.30，更大，最优选不大于1/50，而[R铜/ RIN优选4-1 / 4，爱尤其3-1 / 3，更优选 2-1 / 2。

公开(公告)号：EP0876841A1

公开(公告)日：1998-11-11

申请号：EP98108093.0

申请日：1998-05-04

申请人： JSR Corporation

发明人： Hattori, Masayuki ,  Ito, Nobuyuki

IPC分类号： B01F5/02 ,  B01F3/12 ,  B01F5/08 ,  C09G1/04

CPC分类号： C01B33/1417 ,  B01F3/1214 ,  B01F3/1271 ,  B01F5/0256 ,  B01F13/1025 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/22 ,  C01P2006/80 ,  C09C1/3045 ,  C09C1/3653 ,  C09C1/407 ,  C09C3/06 ,  C09D17/007 ,  Y10S516/922 ,  Y10S516/929 ,  Y10S977/773

摘要： The present invention provides production methods for aqueous dispersion slurry of inorganic particles which are so stable as not to increase in viscosity, gel or sediment even if stored for a long time and whose average particle diameter is 0.01 to 2 µm. As such production method, 2 production methods are available:
A production method (A) having a preliminary dispersion process in which the inorganic particles are added to ad dispersed in an aqueous medium and a main dispersion process in which dispersed slurry out of the preliminary dispersion process are collided with each other under a pressure of 100 to 3,000 kg/cm 2 ; and
A production method (B) in which the inorganic particles are added to an aqueous medium within a kneading tank of a kneader in which mixing blades rotate around respective subsidiary spindles and the subsidiary spindles revolves around a spindle and dispersed at a solid concentration of 30 to 70wt%.

摘要翻译： 本发明提供了即使长时间贮存，平均粒径为0.01〜2μ​​m，无粘性，凝胶或沉淀物稳定的无机粒子的水分散浆料的制造方法。 作为这样的制造方法，可以使用2种制造方法：将分散在水性介质中的无机粒子添加到预分散工序的制造方法（A）和从分散液中分散出的浆料的主分散方法 过程在100至3000kg / cm 2的压力下相互碰撞; 和A制造方法（B），其中将无机颗粒添加到混合机的捏合槽内的水性介质中，其中混合叶片围绕各自的副主轴旋转，并且副主轴围绕主轴旋转并以固体浓度30分散 至70wt％。