利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.008 秒)

    SENSOR
    2.
    发明公开
    SENSOR 失效
    传感器。

    公开(公告)号：EP0082151A1

    公开(公告)日：1983-06-29

    申请号：EP82900622.0

    申请日：1982-02-18

    申请人： ROBERT BOSCH GMBH

    发明人： DOBLER, Klaus ,  GRUNER, Heiko ,  GRÜNWALD, Werner ,  HEINZ, Rudolf ,  SCHOOR, Ulrich

    IPC分类号： G01L9

    CPC分类号： G01L9/0058 ,  G01L9/0002 ,  G01L9/0051 ,  G01L9/045

    摘要： Le détecteur, servant à détecter la pression d'un milieu, utilise au moins un élément modifiant sa valeur de résistance sous l'effet de la pression. Cet élément est un élément résistif courant, de préférence une résistance à couche de charbon, une résistance à couche mince ou une résistance à couche épaisse. Les éléments (21) sont de préférence disposés dans un circuit en pont dans lequel, afin de compenser les influences de la température et d'accroître le signal dépendant de la pression, on utilise des éléments résistifs ayant des coefficients de température et de pression différents. Les éléments résistifs sont en outre disposés sur un support (32) pouvant se déformer élastiquement sous l'effet de la pression, de manière à obtenir un accroissement du signal par l'effet conjoint de la pression ainsi que d'une dilatation, respectivement d'une déformation de l'élément résistif.

    SENSOR MODULE AND METHOD FOR PRODUCING SENSOR MODULE
    3.
    发明授权
    SENSOR MODULE AND METHOD FOR PRODUCING SENSOR MODULE 有权

    公开(公告)号：EP3054275B1

    公开(公告)日：2018-10-24

    申请号：EP16151172.0

    申请日：2016-01-14

    申请人： Nagano Keiki Co., Ltd.

    发明人： MIYASHITA, Kaori ,  TAKEDA, Eiji ,  NAGAI, Yuuji ,  MATSUMURA, Shinya

    IPC分类号： G01L9/00

    CPC分类号： G01L9/0058 ,  G01L9/0044 ,  G01L9/0055 ,  G01L9/006

    摘要： A detector is provided by coating a fluid conductive material on a flat portion of a diaphragm. The detector includes: a resistor element (3); resistor element electrodes (4), which are overlapped and connected with mutually opposed parts of the resistor element (3); and a linear conductor connected with the resistor element electrodes (4). The resistor element electrodes (4) each include: a linear portion (40S) having a linear inner side facing an inner side of paired one of the resistor element electrodes (4); and peripheral portions (40E) defined at both ends of the linear portion (40S), at least one of the peripheral portions (40E) being connected with the linear conductor. All of the linear portions (40S) are arranged so that inner sides (40L) are arranged mutually in parallel. The resistor element (3) is connected with the linear portion (40S). The peripheral portions (40E) are exposed without being connected with the resistor element (3).

    Force transducer and pressure detecting circuit using the same
    4.
    发明公开
    Force transducer and pressure detecting circuit using the same 失效
    力传感器和压力检测电路使用相同的

    公开(公告)号：EP0579226A3

    公开(公告)日：1994-02-16

    申请号：EP93111374.0

    申请日：1993-07-15

    申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

    发明人： Omura, Yoshiteru ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Morikawa, Takeshi, Nagakute-ryo 602

    IPC分类号： G01L1/18 ,  G01L9/06 ,  G01L9/00

    CPC分类号： G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

    摘要： A force transducer (1000) comprising:
    (a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied; (b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉; (c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and (d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').

    摘要翻译： 一种力传感器（1000），包括：（a）具有（110）的面（40a）或等同于（110）的面（40a）的晶面的硅半导体（40），其上的力（W） 将被应用; （b）在晶体的<110>方向上以相互面对的关系安装在所述硅半导体（40）的晶面（40a）上的一对输入输出共用电极（42,42'）或等效的方向 到<110>的方向; （c）与所述硅半导体（40）的晶面（40a）连接，用于垂直于晶面（40a）传输力（W）的力传输块（60）; （d）支撑所述硅半导体（40）并在与所述力传输块（60）连接的晶面相对的面上与所述硅半导体（40）连接的支撑台（70） （W）垂直于所述硅半导体（40）的晶面（40a）施加所述力（W）时，从所述输入输出共用电极（42,42'）输出与所述力（W） （60），同时电流经由所述输入输出共享电极（42,42'）流入所述硅半导体中。

    Force transducer and pressure detecting circuit using the same
    5.
    发明公开
    Force transducer and pressure detecting circuit using the same 失效
    Kraftwandler und seiner Verwendung在einer Druckerfassungsschaltung。

    公开(公告)号：EP0579226A2

    公开(公告)日：1994-01-19

    申请号：EP93111374.0

    申请日：1993-07-15

    申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

    发明人： Omura, Yoshiteru ,  Tsukada, Kouji ,  Nonomura, Yutaka, City-coop Shimadahigashi C-407 ,  Morikawa, Takeshi, Nagakute-ryo 602

    IPC分类号： G01L1/18 ,  G01L9/06 ,  G01L9/00

    CPC分类号： G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

    摘要： A force transducer (1000) comprising:

    (a) a silicon semiconductor (40) having a face (40a) of (110) or a crystal face equivalent to the face (40a) of (110), on which a force (W) is to be applied;
    (b) a pair of input-output shared electrodes (42, 42') mounted on the crystal face (40a) of said silicon semiconductor (40) in mutual confronting relationship in a direction of 〈110〉 of the crystal or a direction equivalent to the direction of 〈110〉;
    (c) a force transmission block (60) connected to the crystal face (40a) of said silicon semiconductor (40) for transmitting the force (W) perpendicularly to the crystal face (40a); and
    (d) a support bed (70) supporting said silicon semiconductor (40) and connected to said silicon semiconductor (40) at a face opposite to the crystal face to which said force transmission block (60) is connected, whereby a voltage corresponding to the force (W) and to be measured is output from said input-output shared electrodes (42, 42') when the force (W) is applied perpendicularly to the crystal face (40a) of said silicon semiconductor (40) via said force transmission block (60) while a current flows in said silicon semiconductor via said input-output shared electrodes (42, 42').

    摘要翻译： 一种力传感器（1000），包括：（a）具有（110）的面（40a）或与（110）的面（40a）相当的晶面的硅半导体（40），其上具有力（W） 应用; （b）在所述硅半导体（40）的晶面（40a）上以与所述晶体的<110>方向或相反方向相对的方式相互面对的关系的一对输入输出共享电极（42,42'） 朝<110>方向; （c）连接到所述硅半导体（40）的晶面（40a）的力传递块（60），用于传递垂直于所述晶体面（40a）的力（W）; 和（d）支撑所述硅半导体（40）并且在与所述力传递块（60）连接的晶面相对的表面处连接到所述硅半导体（40）的支撑床（70），由此对应于 当所述力（W）垂直于所述硅半导体（40）的所述晶面（40a）施加时，从所述输入 - 输出共享电极（42,42'）输出所述测量的力（W） 电流通过所述输入输出共享电极（42,42'）流过所述硅半导体。

    Pressure sensor utilizing extension type conductive rubber
    8.
    发明公开
    Pressure sensor utilizing extension type conductive rubber 失效
    Druckwandler mit ausdehnungsempfindlichem leitendem Gummi。

    公开(公告)号：EP0443073A1

    公开(公告)日：1991-08-28

    申请号：EP90103569.1

    申请日：1990-02-23

    申请人： KABUSHIKI KAISHA FINE RUBBER KENKYUUSHO

    发明人： Kuramochi, Hiroshi ,  Okuda, Yasuo c/oKabushiki Kaisha ,  Ogihara, Sigeyosi c/o Kabushiki Kaisha

    IPC分类号： G01L9/02

    CPC分类号： G01L9/0058

    摘要： A pressure sensor utilizing an extension type conductive elastomer that exhibits a decrease in its electrical resistance responsive to an extension applied thereto. Like sheets of the conductive elastomer 3 and an electrically insulative elastomer 2 are overlaid and sandwiched between supporting members within a housing 1. The housing and each supporting members are preferably cylindrical or ring shaped, which conductive elastomer has a pair of spaced electrodes 5,6 electrically connected thereto at its periphery. The periphery of the electrically insulative elastomer is squeezed continuously in a circle between the supporting members, while the periphery of the conductive elastomer is squeezed therebetween discontinuously in the sections between the electrodes. When a pressure is applied to the contacting elastomers, they will be convexedly deformed both experiencing an extension in their portions not being squeezed together. The applied pressure can be sensed as a change in electrical resistance across the electrodes.

    摘要翻译： 利用延伸型导电弹性体的压力传感器，其响应于施加到其上的延伸而显示出其电阻降低。 类似于导电弹性体3的片和电绝缘弹性体2被覆盖并夹在壳体1内的支撑构件之间。壳体和每个支撑构件优选地是圆柱形或环形的，该导电弹性体具有一对隔开的电极5,6 在其周边与其电连接。 电绝缘弹性体的周边在支撑构件之间以圆圈连续地挤压，而导电弹性体的周边在电极之间的部分间不连续地挤压。 当对接触的弹性体施加压力时，它们将被凸起变形，两者都在其不被挤压在一起的部分中经历延伸。 所施加的压力可以被感测为跨越电极的电阻的变化。

    SENSOR MODULE AND METHOD FOR PRODUCING SENOR MODULE
    9.
    发明公开
    SENSOR MODULE AND METHOD FOR PRODUCING SENOR MODULE 审中-公开

    公开(公告)号：EP3054275A2

    公开(公告)日：2016-08-10

    申请号：EP16151172.0

    申请日：2016-01-14

    申请人： Nagano Keiki Co., Ltd.

    发明人： MIYASHITA, Kaori ,  TAKEDA, Eiji ,  NAGAI, Yuuji ,  MATSUMURA, Shinya

    IPC分类号： G01L9/00

    CPC分类号： G01L9/0058 ,  G01L9/0044 ,  G01L9/0055 ,  G01L9/006

    摘要： A detector is provided by coating a fluid conductive material on a flat portion of a diaphragm. The detector includes: a resistor element (3); resistor element electrodes (4), which are overlapped and connected with mutually opposed parts of the resistor element (3); and a linear conductor connected with the resistor element electrodes (4). The resistor element electrodes (4) each include: a linear portion (40S) having a linear inner side facing an inner side of paired one of the resistor element electrodes (4); and peripheral portions (40E) defined at both ends of the linear portion (40S), at least one of the peripheral portions (40E) being connected with the linear conductor. All of the linear portions (40S) are arranged so that inner sides (40L) are arranged mutually in parallel. The resistor element (3) is connected with the linear portion (40S). The peripheral portions (40E) are exposed without being connected with the resistor element (3).