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1.发明公开Method of manufacturing semiconductor device having multilevel interconnection structure 失效制造具有多层互连结构的半导体器件的方法。
公开(公告)号：EP0608628A3
公开(公告)日：1995-01-18
申请号：EP93310479.6
申请日：1993-12-23
发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation , Ohta, Tomohiro, c/o Kawasaki Steel Corporation , Kawano, Yumiko, c/o Kawasaki Steel Corporation , Kondo, Eiichi, c/o Kawasaki Steel Corporation , Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation , Katagiri, Tomoharu, c/o Kawasaki Steel Corporation
CPC分类号： H01L23/53223 , H01L21/76802 , H01L21/76879 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.
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2.发明公开Method of manufacturing semiconductor device having multilevel interconnection structure 失效Verfahren zur Herstellung einer Halbleitervorrichtung mit Mehrlagen-Verbindungsstruktur。
公开(公告)号：EP0608628A2
公开(公告)日：1994-08-03
申请号：EP93310479.6
申请日：1993-12-23
发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation , Ohta, Tomohiro, c/o Kawasaki Steel Corporation , Kawano, Yumiko, c/o Kawasaki Steel Corporation , Kondo, Eiichi, c/o Kawasaki Steel Corporation , Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation , Katagiri, Tomoharu, c/o Kawasaki Steel Corporation
CPC分类号： H01L23/53223 , H01L21/76802 , H01L21/76879 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.
摘要翻译： 本发明包括在下Al布线层上形成绝缘中间层的第一步骤，在绝缘中间层中形成通孔的第二步骤，在含有氯基气体的气氛中进行等离子体蚀刻的第三步骤 主要成分并且不含碳，以及在通孔中形成Al通孔塞的第四步骤。
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