公开(公告)号：EP0631309A3

公开(公告)日：1995-06-07

申请号：EP94304660.7

申请日：1994-06-27

申请人： KAWASAKI STEEL CORPORATION

发明人： Shinriki, Hiroshi, c/o Kawasaki Steel Corporation ,  Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Komiya, Takayuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90

CPC分类号： H01L21/76879 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

公开(公告)号：EP0631309A2

公开(公告)日：1994-12-28

申请号：EP94304660.7

申请日：1994-06-27

申请人： KAWASAKI STEEL CORPORATION

发明人： Shinriki, Hiroshi, c/o Kawasaki Steel Corporation ,  Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Komiya, Takayuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90

CPC分类号： H01L21/76879 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

摘要翻译： 具有接触结构的半导体器件包括硅衬底（21），形成在硅衬底的表面中的扩散区（28），沉积在扩散区上的高熔点金属的硅化物膜（29c），绝缘膜 （30），形成在所述绝缘膜中的接触孔（31），使得所述硅化物膜在所述接触孔的底部露出，形成在所述接触孔的暴露表面上的防扩散膜（35） 在接触膜的底部的硅化物膜，通过选择性Al CVD形成在接触孔中的插塞（32）和形成在绝缘膜上的金属布线（33），使得金属布线通过 插头，防扩散膜和硅化物膜的手段。 反扩散膜可以通过氮化硅化物膜的表面而形成。

公开(公告)号：EP0608628A3

公开(公告)日：1995-01-18

申请号：EP93310479.6

申请日：1993-12-23

申请人： KAWASAKI STEEL CORPORATION

发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Kawano, Yumiko, c/o Kawasaki Steel Corporation ,  Kondo, Eiichi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation ,  Katagiri, Tomoharu, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/28 ,  H01L21/90

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.

公开(公告)号：EP0608628A2

公开(公告)日：1994-08-03

申请号：EP93310479.6

申请日：1993-12-23

申请人： KAWASAKI STEEL CORPORATION

发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Kawano, Yumiko, c/o Kawasaki Steel Corporation ,  Kondo, Eiichi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation ,  Katagiri, Tomoharu, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/28 ,  H01L21/90

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.

摘要翻译： 本发明包括在下Al布线层上形成绝缘中间层的第一步骤，在绝缘中间层中形成通孔的第二步骤，在含有氯基气体的气氛中进行等离子体蚀刻的第三步骤 主要成分并且不含碳，以及在通孔中形成Al通孔塞的第四步骤。