公开(公告)号：EP0560617A2

公开(公告)日：1993-09-15

申请号：EP93301879.8

申请日：1993-03-12

申请人： KAWASAKI STEEL CORPORATION

发明人： Sato, Nobuyoshi, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Nakano, Tadashi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/67017 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/31051 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837 ,  Y10S148/017 ,  Y10S438/974

摘要： In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.

摘要翻译： 在制造通过化学气相沉积绝缘的半导体装置的电影的方法，在半导体晶片的表面在有机化合物处理用：如乙醇和甲醇，然后将半导体晶片被输送到反应室中，并在绝缘 电影是通过使用原料的化学气相沉积沉积在半导体晶片的这样处理过的表面上：如有机硅化合物。 通过向沉积之前治疗与有机化合物的半导体晶片的表面，绝缘的填充能力和平坦化膜-得到改善。 此外，绝缘膜，由此形成由空隙和叨免费的，并且包含在该绝缘的水的量的膜是非常小的。 在半导体晶片的表面的处理可以简单地通过旋涂，喷施，蒸气暴露或浸渍来进行，所以做了能够提高吞吐量。 更完了，所述有机化合物的一种用于处理半导体晶片的表面上的气体可以与在反应室中的原料气体和反应气体混合。

公开(公告)号：EP0560617A3

公开(公告)日：1993-11-24

申请号：EP93301879.8

申请日：1993-03-12

申请人： KAWASAKI STEEL CORPORATION

发明人： Sato, Nobuyoshi, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Nakano, Tadashi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/67017 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/31051 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837 ,  Y10S148/017 ,  Y10S438/974

摘要： In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.

公开(公告)号：EP0631309A3

公开(公告)日：1995-06-07

申请号：EP94304660.7

申请日：1994-06-27

申请人： KAWASAKI STEEL CORPORATION

发明人： Shinriki, Hiroshi, c/o Kawasaki Steel Corporation ,  Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Komiya, Takayuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90

CPC分类号： H01L21/76879 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

公开(公告)号：EP0631309A2

公开(公告)日：1994-12-28

申请号：EP94304660.7

申请日：1994-06-27

申请人： KAWASAKI STEEL CORPORATION

发明人： Shinriki, Hiroshi, c/o Kawasaki Steel Corporation ,  Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Komiya, Takayuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90

CPC分类号： H01L21/76879 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

摘要翻译： 具有接触结构的半导体器件包括硅衬底（21），形成在硅衬底的表面中的扩散区（28），沉积在扩散区上的高熔点金属的硅化物膜（29c），绝缘膜 （30），形成在所述绝缘膜中的接触孔（31），使得所述硅化物膜在所述接触孔的底部露出，形成在所述接触孔的暴露表面上的防扩散膜（35） 在接触膜的底部的硅化物膜，通过选择性Al CVD形成在接触孔中的插塞（32）和形成在绝缘膜上的金属布线（33），使得金属布线通过 插头，防扩散膜和硅化物膜的手段。 反扩散膜可以通过氮化硅化物膜的表面而形成。

公开(公告)号：EP0608628A3

公开(公告)日：1995-01-18

申请号：EP93310479.6

申请日：1993-12-23

申请人： KAWASAKI STEEL CORPORATION

发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Kawano, Yumiko, c/o Kawasaki Steel Corporation ,  Kondo, Eiichi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation ,  Katagiri, Tomoharu, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/28 ,  H01L21/90

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.

公开(公告)号：EP0608628A2

公开(公告)日：1994-08-03

申请号：EP93310479.6

申请日：1993-12-23

申请人： KAWASAKI STEEL CORPORATION

发明人： Takeyasu, Nobuyuki, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Kawano, Yumiko, c/o Kawasaki Steel Corporation ,  Kondo, Eiichi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation ,  Katagiri, Tomoharu, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/28 ,  H01L21/90

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention comprises the first step of forming an insulating interlayer on a lower Al wiring layer, the second step of forming a via hole in the insulating interlayer, the third step of performing plasma etching in an atmosphere containing a chlorine-based gas as a major component and not containing carbon, and the forth step of forming an Al via plug in the via hole.

摘要翻译： 本发明包括在下Al布线层上形成绝缘中间层的第一步骤，在绝缘中间层中形成通孔的第二步骤，在含有氯基气体的气氛中进行等离子体蚀刻的第三步骤 主要成分并且不含碳，以及在通孔中形成Al通孔塞的第四步骤。