METALLIZATION FOR PREVENTING SUBSTRATE WARPAGE
    1.
    发明公开
    METALLIZATION FOR PREVENTING SUBSTRATE WARPAGE 审中-公开
    METALLISIERUNG ZUR VERMEIDUNG VON SUBSTRATVERBIEGUNG

    公开(公告)号:EP3041047A1

    公开(公告)日:2016-07-06

    申请号:EP15202509.4

    申请日:2015-12-23

    申请人: Kcc Corporation

    IPC分类号: H01L23/498

    摘要: The present invention relates to a warpage-preventing structure for reducing the warpage of the substrate itself, the warpage which results from the difference of the metal patterns of top and bottom surfaces, and/or the warpage which results from the difference in the thermal expansion coefficients of a metal pattern and the substrate, the warpage-preventing structure comprising at least one additional metal layer, wherein the at least one additional metal layer is disposed on at least one surface of the substrate and arranged along an edge of the substrate.

    摘要翻译: 本发明涉及一种用于减少基板本身的翘曲的翘曲防止结构,由顶部和底部表面的金属图案的差异引起的翘曲和/或由热膨胀差引起的翘曲 金属图案和基板的系数,防翘曲结构包括至少一个附加金属层,其中所述至少一个附加金属层设置在基板的至少一个表面上并且沿着基板的边缘布置。

    METAL-BONDED CERAMIC SUBSTRATE
    2.
    发明公开
    METAL-BONDED CERAMIC SUBSTRATE 审中-公开
    METALLGEBUNDENES KERAMIKSUBSTRAT

    公开(公告)号:EP2546870A2

    公开(公告)日:2013-01-16

    申请号:EP11753594.8

    申请日:2011-03-09

    申请人: KCC Corporation

    IPC分类号: H01L23/15

    摘要: A metal-bonding ceramic substrate is provided. The ceramic substrate has a circuit pattern formed by bonding a metal layer on a surface thereof. A plurality of metal layers are disposed in rows and columns to form the circuit pattern. An additional metal layer is formed along an edge of at least one surface of the ceramic substrate to be disposed at the edge of the metal layer. In addition, the distance between the metal layers may be the same as that between the metal layer and the additional metal layer. Accordingly, dimension precision may be improved by reducing a variation of a circuit pattern in an etching process for forming a circuit, a bonding property of a semiconductor chip may be enhanced by reducing a temperature variation in thermal treatment of a lead ash layer for mounding the semiconductor chip, and bending of a substrate occurring due to a difference in the coefficient of thermal expansion between a metal and a ceramic may be reduced or artificially controlled.

    摘要翻译: 提供了金属结合陶瓷基板。 陶瓷基板具有通过在其表面上接合金属层而形成的电路图案。 多个金属层以行和列布置以形成电路图案。 沿着陶瓷基板的至少一个表面的边缘形成另外的金属层,以设置在金属层的边缘。 此外,金属层之间的距离可以与金属层和附加金属层之间的距离相同。 因此,通过减少用于形成电路的蚀刻工艺中的电路图案的变化,可以提高尺寸精度,通过降低用于堆焊的铅灰层的热处理的温度变化可以提高半导体芯片的接合性能 可以减少或人为地控制由于金属和陶瓷之间的热膨胀系数的差异而发生的基板的弯曲。