公开(公告)号：EP3222759A4

公开(公告)日：2018-05-30

申请号：EP15861692

申请日：2015-11-17

申请人： KWANSEI GAKUIN EDUCATIONAL FOUND ,  TOYO TANSO CO

发明人： KANEKO TADAAKI ,  ASHIDA KOJI ,  KUTSUMA YASUNORI ,  TORIMI SATOSHI ,  SHINOHARA MASATO ,  TERAMOTO YOUJI ,  YABUKI NORIHITO ,  NOGAMI SATORU

IPC分类号： C30B33/12 ,  C30B29/36 ,  H01L21/302

CPC分类号： H01L21/30621 ,  C30B29/36 ,  C30B33/12 ,  H01L21/0445 ,  H01L21/302 ,  H01L21/304

摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

公开(公告)号：EP3223303A4

公开(公告)日：2018-05-30

申请号：EP15861337

申请日：2015-11-17

申请人： TOYO TANSO CO ,  KWANSEI GAKUIN EDUCATIONAL FOUND

发明人： TORIMI SATOSHI ,  SHINOHARA MASATO ,  TERAMOTO YOUJI ,  YABUKI NORIHITO ,  NOGAMI SATORU ,  KANEKO TADAAKI ,  ASHIDA KOJI ,  KUTSUMA YASUNORI

IPC分类号： H01L21/302 ,  C30B29/36 ,  C30B33/12 ,  C30B35/00

CPC分类号： H01L21/30604 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  H01L21/302 ,  H01L21/67063

摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

公开(公告)号：EP2749675A4

公开(公告)日：2015-06-03

申请号：EP12828285

申请日：2012-08-24

申请人： TOYO TANSO CO

发明人： KANEKO TADAAKI ,  OHTANI NOBORU ,  USHIO SHOJI ,  ADACHI AYUMU ,  NOGAMI SATORU

IPC分类号： H01L21/02 ,  C30B19/04 ,  C30B29/36

CPC分类号： H01L21/02664 ,  C30B19/04 ,  C30B19/12 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02625 ,  H01L21/02658 ,  H01L21/67109 ,  H01L29/1608