公开(公告)号：EP3159932A1

公开(公告)日：2017-04-26

申请号：EP15811392.8

申请日：2015-06-17

申请人： Kabushiki Kaisha Toshiba

发明人： SUZUKI, Mariko ,  SAKAI, Tadashi

IPC分类号： H01L29/861 ,  H01L21/205 ,  H01L21/28 ,  H01L21/329 ,  H01L29/06 ,  H01L29/16 ,  H01L29/868

CPC分类号： H01L29/868 ,  H01L21/043 ,  H01L29/08 ,  H01L29/1602 ,  H01L29/402 ,  H01L29/417 ,  H01L29/6603 ,  H01L29/861 ,  H01L29/8613

摘要： According to one embodiment, a semiconductor device includes an n-type semiconductor layer containing diamond, a first electrode including a first portion, an intermediate layer, and a p-type semiconductor layer containing diamond. The intermediate layer contains at least any of a carbide, graphite, graphene, and amorphous carbon. The carbide contains at least any of Ti, Si, Al, W, Ni, Cr, Ca, Li, Ru, Mo, Zr, Sr, Co, Rb, K, Cu, and Na. The intermediate layer includes a first region provided between the first portion and the n-type semiconductor layer, and a second region provided around the first region when projected on a plane perpendicular to a direction from the n-type semiconductor layer to the first electrode. The second region does not overlap the first portion, and is continuous with the first region.

摘要翻译： 根据一个实施例，半导体器件包括含有金刚石的n型半导体层，包括第一部分的第一电极，中间层和含有金刚石的p型半导体层。 中间层至少含有碳化物，石墨，石墨烯和无定形碳中的任一种。 碳化物至少含有Ti，Si，Al，W，Ni，Cr，Ca，Li，Ru，Mo，Zr，Sr，Co，Rb，K，Cu和Na中的任一种。 中间层包括设置在第一部分和n型半导体层之间的第一区域以及当投影到垂直于从n型半导体层到第一电极的方向的平面上时设置在第一区域周围的第二区域。 第二区域不与第一部分重叠，并且与第一区域连续。

公开(公告)号：EP3454379A1

公开(公告)日：2019-03-13

申请号：EP18156964.1

申请日：2018-02-15

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： SUZUKI, Mariko ,  SAKAI, Tadashi

IPC分类号： H01L29/868 ,  H01L29/861 ,  H01L21/329 ,  H01L29/16 ,  H01L29/04 ,  H01L29/06

摘要： In one embodiment, a diamond semiconductor device (10) includes a first diamond semiconductor layer (1) of a first conductivity type which has a main surface (1a), a second diamond semiconductor layer (2) of an i-type or a second conductivity type which is provided on the main surface (1a) of the first diamond semiconductor layer (1), and has a first side surface (2a) with a plane orientation of a {111} plane, a third diamond semiconductor layer (3) of the first conductivity type which is provided on the first side surface (2a), and a fourth diamond semiconductor layer (4) of the second conductivity type which is provided on the main surface (1a) of the first diamond semiconductor layer (1) and on a side surface (2c) of the second diamond semiconductor layer (2) at a side opposite to a side of the third diamond semiconductor layer (3) .

公开(公告)号：EP3035390A1

公开(公告)日：2016-06-22

申请号：EP15198747.6

申请日：2015-12-09

申请人： Kabushiki Kaisha Toshiba

发明人： SUZUKI, Mariko ,  SAKAI, Tadashi

IPC分类号： H01L29/868 ,  H01L29/861 ,  H01L21/329 ,  H01L29/267 ,  H01L29/737 ,  H01L29/15

CPC分类号： H01L29/1602 ,  H01L29/0817 ,  H01L29/155 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/452 ,  H01L29/6603 ,  H01L29/66219 ,  H01L29/7371 ,  H01L29/861 ,  H01L29/868

摘要： According to one embodiment, a semiconductor device (110, 120, 130) includes an n-type semiconductor layer (11), a first electrode (40), and a nitride semiconductor layer (30). The n-type semiconductor layer (11) includes diamond. The nitride semiconductor layer (30) is provided between the n-type semiconductor layer (11) and the first electrode (40). The nitride semiconductor layer (30) includes Al x Ga 1-x N (0 ≤ x ≤ 1) and is of n-type.

摘要翻译： 根据一个实施例，半导体器件（110,120,130）包括n型半导体层（11），第一电极（40）和氮化物半导体层（30）。 n型半导体层（11）包含金刚石。 氮化物半导体层（30）设置在n型半导体层（11）与第一电极（40）之间。 氮化物半导体层（30）包含Al x Ga 1-x N（0≤x≤1）且为n型。