公开(公告)号：EP2717299A4

公开(公告)日：2015-04-08

申请号：EP11857966

申请日：2011-05-26

申请人： SHINDENGEN ELECTRIC MFG

发明人： OGASAWARA ATSUSHI ,  ITO KAZUHIKO ,  ITO KOJI

IPC分类号： H01L23/29 ,  C03C3/066 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  H01L23/31

CPC分类号： H01L21/022 ,  C03C3/066 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  H01L21/02123 ,  H01L21/02172 ,  H01L21/02318 ,  H01L21/76232 ,  H01L23/291 ,  H01L23/3178 ,  H01L23/564 ,  H01L29/0661 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a glass composition for protecting a semiconductor junction which contains at least SiO 2 , Al 2 O 3 , ZnO, CaO and 3 mol% to 10 mol% of B 2 O 3 , and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO 2 falls within a range of 32 mol% to 48 mol%, a content of Al 2 O 3 falls within a range of 9 mol% to 13 mol%, a content of ZnO falls within a range of 18 mol% to 28 mol%, a content of CaO falls within a range of 15 mol% to 23 mol%, and a content of B 2 O 3 falls within a range of 3 mol% to 10 mol%. According to the glass composition for protecting a semiconductor junction of the present invention, a semiconductor device having a high withstand voltage can be manufactured by using a glass material which contains no lead in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used.

公开(公告)号：EP2850660A1

公开(公告)日：2015-03-25

申请号：EP13728572.2

申请日：2013-05-15

申请人： General Electric Company

发明人： ARTHUR, Stephen, Daley ,  BOLOTNIKOV, Alexander, Viktorovich ,  LOSEE, Peter, Almem ,  MATOCHA, Kevin, Sean ,  SAIA, Richard, Joseph ,  STUM, Zachary, Matthew ,  STEVANOVIC, Ljubisa, Dragoljub ,  KISHORE, Kuna, Venkat Satya Rama ,  KRETCHMER, James, William

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L29/06 ,  H01L29/16 ,  H01L21/266 ,  H01L29/78

CPC分类号： H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

摘要： A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×1013 per cm2.

公开(公告)号：EP2430651A1

公开(公告)日：2012-03-21

申请号：EP10711798.8

申请日：2010-03-09

申请人： Cree, Inc. ,  University of South Carolina

发明人： ZHANG, Qingchun ,  AGARWAL, Anant, K. ,  SUDARSHAN, Tangali, S. ,  BOLOTNIKOV, Alexander

IPC分类号： H01L21/266 ,  H01L29/06 ,  H01L21/223 ,  H01L29/861

CPC分类号： H01L29/1608 ,  H01L21/0465 ,  H01L21/223 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/36 ,  H01L29/8613 ,  H01L29/872

摘要： An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2x10
14 cm
-2 .

公开(公告)号：EP2400543A2

公开(公告)日：2011-12-28

申请号：EP11007462.2

申请日：2004-08-19

申请人： The Kansai Electric Power Co., Inc.

发明人： Sugawara, Yoshikata

IPC分类号： H01L23/34 ,  H01L29/861 ,  H01L29/74

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： This invention relates to a semiconductor production method comprising: a step of stacking at least two wide-gap semiconductor layers having different conductive types each other so as to form a wide-gap bipolar semiconductor element having a built-in voltage in the forward direction; and a step of irradiating a gamma ray, an electron beam or a charged particle beam having predetermined irradiation energy to the wide-gap semiconductor layers having stacking faults up to a predetermined amount of irradiation.

摘要翻译： 本发明涉及一种半导体制造方法，包括：堆叠具有不同的导电类型海誓山盟，以便形成具有宽带隙双极型半导体元件的至少两个宽带隙半导体层的工序的内置在正向电压; 和照射γ射线的电子束的步骤或带电粒子束具有预定照射能量具有堆垛层错高达照射预定量的所述宽间隙半导体层。

公开(公告)号：EP2398049A2

公开(公告)日：2011-12-21

申请号：EP11007461.4

申请日：2004-08-19

申请人： The Kansai Electric Power Co., Inc.

发明人： Sugawara, Yoshikata

IPC分类号： H01L23/34 ,  H01L29/06 ,  H01L29/744 ,  H01L29/861

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power conversion apparatus comprising: switching modules, each of which includes a wide-gap bipolar semiconductor element, a diode element having a wide-gap semiconductor and connected in reverse parallel to the wide-gap bipolar semiconductor element, a package accommodating said wide-gap bipolar semiconductor element and said diode element, and having electrical connection section which connects the wide-gap bipolar semiconductor element and the diode element in reverse parallel and connects the wide-gap bipolar semiconductor element and the diode element having been connected in reverse parallel to external apparatuses. A heating section keeps the wide-gap bipolar semiconductor element and diode element in the package at a predetermined temperature higher than ordinary temperature. A switching circuit is constructed by connecting three series connections, each comprising at least two of the switching modules connected in series, in parallel between the positive pole and the negative pole of a DC power source. A control circuit is provided for each of said switching modules and controls the operation of the switching circuit after each switching module is heated by the heating section and the temperature of each switching module reaches a predetermined temperature.

摘要翻译： 一种功率转换设备，包括：交换模块，其中的每一个包括一宽能隙双极型半导体元件，二极管元件具有宽能隙半导体和反向并联连接到宽带隙双极半导体元件，一个包容纳所述宽 间隙双极半导体元件与所述二极管元件，并且具有宽带隙双极半导体元件和反向并联的二极管元件连接并连接宽带隙双极半导体元件和二极管元件已经被反向连接到并联电连接部 外部设备。 的加热部保持在包装中的宽间隙双极半导体元件和二极管元件在预定温度高于常温。 开关电路由正极和DC电源的负极之间连接的三个系列的连接，每一个都包括至少两个串联连接的开关模块的并行构建。 控制电路被设置用于每个所述切换模块，每个交换模块被加热部加热，每个开关模块的温度达到预定温度后控制操作切换电路的。

公开(公告)号：EP2248162A2

公开(公告)日：2010-11-10

申请号：EP09716068.3

申请日：2009-02-25

申请人： Advanced Analogic Technologies, Inc.

发明人： DISNEY, Donald, R. ,  WILLIAMS, Richard, K.

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L29/0638 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/41766 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7835 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various integrated circuit devices, in particular a transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.

公开(公告)号：EP2244297A1

公开(公告)日：2010-10-27

申请号：EP08711094.6

申请日：2008-02-12

申请人： Mitsubishi Electric Corporation

发明人： TARUI, Yoichiro ,  OHTSUKA, Kenichi ,  MIURA, Naruhisa ,  MATSUNO, Yoshinori ,  IMAIZUMI, Masayuki

IPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/47 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L29/66068 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer.

摘要翻译： 为了获得在作为半导体元件驱动的单元部分的周边中提供用于电场弛豫的其终端部分中的高温操作的耐受电压和可靠性的稳定性的碳化硅半导体器件， 端部设有具有高耐热性的无机保护膜，所述无机保护膜形成在作为形成在电池单元侧的第一区域的阱区的暴露表面上，以及具有高电绝缘能力的有机保护膜， 在形成于与阱区域的外侧表面形成的电场弛豫区域的表面并且与电池部分分离的情况下以及在碳化硅层的暴露表面上形成的电荷的一点影响。

公开(公告)号：EP1739726A4

公开(公告)日：2009-08-26

申请号：EP05721512

申请日：2005-03-25

申请人： KANSAI ELECTRIC POWER CO ,  CENTRAL RES INST ELECT

发明人： NAKAYAMA KOJI ,  SUGAWARA YOSHITAKA ,  TSUCHIDA HIDEKAZU ,  KAMATA ISAHO ,  MIYANAGI TOSHIYUKI ,  NAKAMURA TOMONORI

IPC分类号： H01L21/20 ,  H01L21/04 ,  H01L21/205 ,  H01L21/302 ,  H01L21/331 ,  H01L21/336 ,  H01L29/73 ,  H01L29/737 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/8613 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661

摘要： Production of a bipolar semiconductor device having at least part of a region wherein at current passage electrons and holes re-couple with each other formed of an epitaxial layer of silicon carbide grown from a surface of silicon carbide substrate, wherein the epitaxial layer is formed by first performing hydrogen etching of a surface of silicon carbide substrate and thereafter effecting epitaxial growth of silicon carbide from the etched surface. Further propagation of a basal plane dislocation to the epitaxial layer can be reduced by subjecting the surface of silicon carbide substrate to chemical mechanical polishing prior to the hydrogen etching.

公开(公告)号：EP1092238A1

公开(公告)日：2001-04-18

申请号：EP99915461.0

申请日：1999-02-08

申请人： Infineon Technologies AG

发明人： TIHANYI, Jenö ,  PLOSS, Reinhard

IPC分类号： H01L29/06

CPC分类号： H01L29/0634 ,  H01L21/187 ,  H01L21/22 ,  H01L21/261 ,  H01L21/26513 ,  H01L29/0623 ,  H01L29/167 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/744 ,  H01L29/7811 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a universal semiconductor wafer for high-voltage semiconductor components in which at least one layer (5, 6, 7) of a first conduction type is provided on a semiconductor substrate (4) of a first conduction type. A plurality of floating semiconductor regions (8) of the other conduction type are embedded in the boundary surfaces between the semiconductor substrate (4) and the at least one layer. These semiconductor regions are measured such that the measurement of a semiconductor region (8) is smaller compared to the layer thickness of the semiconductor layer (5, 6, 7) and is essentially equal to or less than the distance between the floating semiconductor regions (8) in a boundary surface.

公开(公告)号：EP0780910B1

公开(公告)日：2000-05-31

申请号：EP96309244.0

申请日：1996-12-18

申请人： GENERAL SEMICONDUCTOR, Inc.

发明人： Wu, Jun ,  Garbis, Dennis ,  Amato, John ,  Einthoven, Willem ,  Eng, Jack ,  Laterza, Lawrence ,  Chan, Joseph ,  Zakaluk, Gregory

IPC分类号： H01L29/861 ,  H01L29/06

CPC分类号： H01L29/165 ,  H01L29/8613