公开(公告)号：EP4246596A1

公开(公告)日：2023-09-20

申请号：EP22193810.3

申请日：2022-09-05

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： ITOKAZU, Hiroko ,  MATSUDAI, Tomoko ,  IWAKAJI, Yoko ,  KAWAMURA, Keiko ,  FUSE, Kaori

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L29/06 ,  H01L29/40

摘要： A semiconductor device (1-7a) includes a semiconductor part (10), first and second electrodes (20, 30), and first-third and second-third electrodes (40a, 40b). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The semiconductor part (10) includes a first semiconductor layer (11) of a first conductivity type, second and third semiconductor layers (13, 15) of a second conductivity type. The second and third semiconductor layers (13, 15) are arranged between the first semiconductor layer (11) and the second electrode (30). The first-third and second-third electrodes (40a, 40b) are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode (40a) and the second-third electrode (40b). The second electrode (30) includes a contact portion (30c) extending into the second semiconductor layer (13). The third semiconductor layer (15) is provided on the second semiconductor layer (13) between the contact portion (30c) and the second-third electrode (40b). The second semiconductor layer (13) includes a first portion (13a) facing the third semiconductor layer (15) via the contact portion (30c).

公开(公告)号：EP4343853A1

公开(公告)日：2024-03-27

申请号：EP23157662.0

申请日：2023-02-21

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： MOTAI, Takako ,  IWAKAJI, Yoko ,  FUSE, Kaori ,  KAWAMURA, Keiko ,  ICHINOSEKI, Kentaro

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L21/331

摘要： A semiconductor device includes an n-type semiconductor substrate (10), a cell region (20), and a termination region (30). The termination region surrounds the cell region and includes a plurality of first p-type diffusion layers (301-303) at the front face of the semiconductor substrate containing a first conductive impurity (p), a plurality of second p-type diffusion layers (311-313) each disposed on an outer side of each of the plurality of first p-type diffusion layers and having a concentration of the first conductive impurity (p) lower than that of the p-type first diffusion layers, and a plurality of conductive layers (321), functioning as field plates, above the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate. The plurality of conductive layers electrically being connected to the first diffusion layers, the plurality of conductive layers each having an outer edge (321a), said outer edge disposed above the second diffusion layer adjacent the first diffusion layer contacting the respective field plate. The termination region may comprise a plurality of vertically stacked conductive regions (321, 322) separated by a dielectric (40).

公开(公告)号：EP4343855A1

公开(公告)日：2024-03-27

申请号：EP23159217.1

申请日：2023-02-28

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： ITOKAZU, Hiroko ,  IWAKAJI, Yoko ,  KAWAMURA, Keiko ,  MATSUDAI, Tomoko ,  FUSE, Kaori ,  MOTAI, Takako

IPC分类号： H01L29/739 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06

摘要： A semiconductor device (1 to 5, 8a, 8b, 9a, 9b) includes a semiconductor part (10), first to fourth electrodes (20, 30, 50, 60) and a control electrode (40). The first and second electrodes (20. 30) are provided respectively on back and front surfaces (10B, 10F) of the semiconductor part (10). The third electrode (50) is provided between the first and second electrodes (20, 30), and provided in the semiconductor part (10) with a first insulating film (21) interposed. The fourth and control electrodes (60, 40) are provided between the second and third electrodes (30, 50). The fourth and control electrodes (60, 40) extends into the semiconductor part (10) from the front side (10F) and faces the third electrode (50) with a second insulating film (23) interposed. The fourth electrode (60) is positioned between the semiconductor part (10) and the control electrode (40). The first insulating film (21) extends between the semiconductor part (10) and the control electrode (40) and between the semiconductor part (10) and the fourth electrode (60). The fourth electrode (60) faces the control electrode (40) with a third insulating film (25) interposed, and is electrically connected to the third electrode (50).

公开(公告)号：EP4343854A1

公开(公告)日：2024-03-27

申请号：EP23157663.8

申请日：2023-02-21

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： MOTAI, Takako ,  IWAKAJI, Yoko ,  FUSE, Kaori ,  ITOKAZU, Hiroko ,  KAWAMURA, Keiko

IPC分类号： H01L29/739 ,  H01L21/331 ,  H01L29/40 ,  H01L29/06

摘要： A semiconductor device according to an embodiment includes a semiconductor substrate (10), a cell region (20), and a termination region (30). The termination region surrounds the cell region and includes a plurality of first diffusion layers (310) containing a first conductivity type impurity of a conductivity type opposite to that of the substrate. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers (310) includes a first region (311) extending in the first direction from the first face toward a second face of the semiconductor substrate, and a buried second region (312) extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region. Furthermore, field plates (321, 322) may be connected to the first diffusion layers (310).

公开(公告)号：EP4336566A1

公开(公告)日：2024-03-13

申请号：EP23152380.4

申请日：2023-01-19

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： IWAKAJI, Yoko ,  KAWAMURA, Keiko ,  GEJO, Ryohei ,  FUSE, Kaori

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L21/331 ,  H01L21/329

摘要： A vertical trench-gate IGBT (10B) with integral FWD (10A) is described. According to one embodiment, the FWD part (10A) includes first (51) and second (52) main electrodes, a first conductive member (61) serving as a trench field plate, a semiconductor member, and an insulating member (41). The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion (52a), which is recessed in the anode region of the diode. The first conductive portion is electrically connected to the first conductive region. The first conductive member (61) is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor (drift) region (11) of a first conductive type, a second semiconductor (anode) region (12) of a second conductive type, a third semiconductor (contact) region (13) of the second conductive type, a fourth semiconductor region (14) of the first conductive type, and a fifth semiconductor region (15) of the first conductive type, located at the bottom end of the recessed anode electrode (52a).