-
公开(公告)号：EP4060747A2
公开(公告)日：2022-09-21
申请号：EP22158411.3
申请日：2022-02-24
发明人： YASUHARA, Norio , IWAKAJI, Yoko , KAWAGUCHI, Yusuke , YOSHIKAWA, Daiki , MATSUSHITA, Kenichi , HANAGATA, Shoko , MATSUDAI, Tomoko , ITOKAZU, Hiroko , KAWAMURA, Keiko
IPC分类号： H01L29/739 , H01L29/40 , H01L29/06
摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.
-
公开(公告)号：EP4060747A3
公开(公告)日：2022-11-16
申请号：EP22158411.3
申请日：2022-02-24
发明人： YASUHARA, Norio , IWAKAJI, Yoko , KAWAGUCHI, Yusuke , YOSHIKAWA, Daiki , MATSUSHITA, Kenichi , HANAGATA, Shoko , MATSUDAI, Tomoko , ITOKAZU, Hiroko , KAWAMURA, Keiko
IPC分类号： H01L29/739 , H01L29/40 , H01L29/06 , H01L29/423 , H01L29/10
摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.
-
公开(公告)号：EP4250365A1
公开(公告)日：2023-09-27
申请号：EP22194293.1
申请日：2022-09-07
发明人： MATSUDAI, Tomoko , IWAKAJI, Yoko , GEJO, Ryohei
IPC分类号： H01L29/06 , H01L29/08 , H01L29/423 , H01L29/739 , H01L29/78
摘要： A semiconductor device according to the embodiment includes: a transistor, in particular an IGBT, region (26) including a first trench gate (51), a second trench gate (52) and a third trench gate (53); a diode region (102) including a trench and a conductive layer (55) provided in the trench; a boundary region (103) including a fourth trench gate (54), the boundary region being provided between the transistor region and the diode region; a first electrode pad electrically connected to the first trench gate; a second electrode pad electrically connected to the second trench gate; and a third electrode pad electrically connected to the third and to the fourth trench gate.
-
公开(公告)号：EP4231357A1
公开(公告)日：2023-08-23
申请号：EP22182824.7
申请日：2022-07-04
发明人： GEJO, Ryohei , MATSUDAI, Tomoko , IWAKAJI, Yoko
IPC分类号： H01L29/06 , H01L29/08 , H01L29/739
摘要： S1 ≤ S2 being satisfied, where S1 is a surface area of the first gate electrode and the third semiconductor layer facing each other via the first insulating film, S2 is a surface area of the second gate electrode and the third semiconductor layer facing each other via the second insulating film, and S3 is a surface area of the third gate electrode and the third semiconductor layer facing each other via the third insulating film.
-
公开(公告)号：EP4246596A1
公开(公告)日：2023-09-20
申请号：EP22193810.3
申请日：2022-09-05
IPC分类号： H01L29/861 , H01L29/739 , H01L29/06 , H01L29/40
摘要： A semiconductor device (1-7a) includes a semiconductor part (10), first and second electrodes (20, 30), and first-third and second-third electrodes (40a, 40b). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The semiconductor part (10) includes a first semiconductor layer (11) of a first conductivity type, second and third semiconductor layers (13, 15) of a second conductivity type. The second and third semiconductor layers (13, 15) are arranged between the first semiconductor layer (11) and the second electrode (30). The first-third and second-third electrodes (40a, 40b) are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode (40a) and the second-third electrode (40b). The second electrode (30) includes a contact portion (30c) extending into the second semiconductor layer (13). The third semiconductor layer (15) is provided on the second semiconductor layer (13) between the contact portion (30c) and the second-third electrode (40b). The second semiconductor layer (13) includes a first portion (13a) facing the third semiconductor layer (15) via the contact portion (30c).
-
公开(公告)号：EP4064365A3
公开(公告)日：2022-10-19
申请号：EP22158409.7
申请日：2022-02-24
IPC分类号： H01L29/739 , H01L29/06 , H01L29/423 , H01L29/417
摘要： A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.
-
公开(公告)号：EP4057361A1
公开(公告)日：2022-09-14
申请号：EP22158414.7
申请日：2022-02-24
发明人： MATSUDAI, Tomoko , IWAKAJI, Yoko , ITOKAZU, Hiroko
IPC分类号： H01L29/861 , H01L29/872 , H01L29/06 , H01L29/739 , H01L29/08
摘要： A semiconductor device of embodiments includes: a semiconductor layer including a first trench, a second trench, a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type provided between a first face and the first semiconductor region, between the first trench and the second trench, and in contact with the second trench, a third semiconductor region of a first conductive type provided between the first trench and the second semiconductor region, a fourth semiconductor region of a second conductive type provided between the third semiconductor region and the first face, and a fifth semiconductor region of a second conductive type provided between the second semiconductor region and the first face, spaced from the fourth semiconductor region, in contact with the second trench; a first electrode on a first face side; and a second electrode on a second face side.
-
公开(公告)号：EP4343855A1
公开(公告)日：2024-03-27
申请号：EP23159217.1
申请日：2023-02-28
发明人： ITOKAZU, Hiroko , IWAKAJI, Yoko , KAWAMURA, Keiko , MATSUDAI, Tomoko , FUSE, Kaori , MOTAI, Takako
IPC分类号： H01L29/739 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/10 , H01L29/06
摘要： A semiconductor device (1 to 5, 8a, 8b, 9a, 9b) includes a semiconductor part (10), first to fourth electrodes (20, 30, 50, 60) and a control electrode (40). The first and second electrodes (20. 30) are provided respectively on back and front surfaces (10B, 10F) of the semiconductor part (10). The third electrode (50) is provided between the first and second electrodes (20, 30), and provided in the semiconductor part (10) with a first insulating film (21) interposed. The fourth and control electrodes (60, 40) are provided between the second and third electrodes (30, 50). The fourth and control electrodes (60, 40) extends into the semiconductor part (10) from the front side (10F) and faces the third electrode (50) with a second insulating film (23) interposed. The fourth electrode (60) is positioned between the semiconductor part (10) and the control electrode (40). The first insulating film (21) extends between the semiconductor part (10) and the control electrode (40) and between the semiconductor part (10) and the fourth electrode (60). The fourth electrode (60) faces the control electrode (40) with a third insulating film (25) interposed, and is electrically connected to the third electrode (50).
-
公开(公告)号：EP4328974A1
公开(公告)日：2024-02-28
申请号：EP23152376.2
申请日：2023-01-19
发明人： IWAKAJI, Yoko , MATSUDAI, Tomoko , ITOKAZU, Hiroko
IPC分类号： H01L29/06 , H01L29/739 , H01L21/331
摘要： According to one embodiment, a semiconductor device includes a first electrode (51), a second electrode (52), a third trench gate electrode (53), a semiconductor member, and an insulating member (41). The semiconductor member includes a first semiconductor drift region (11) of a first conductivity type, a second semiconductor body region (12) of a second conductivity type, a third semiconductor emitter region (13) of the first conductivity type, a fourth semiconductor region (14) of the first conductivity type, a fifth buried semiconductor region of the second conductivity type (15), and a sixth semiconductor collector region (16) of the second conductivity type. The fifth buried semiconductor region includes a fourth partial region (15d) and a fifth partial region (15e). The fourth partial region (15d) is located between the first semiconductor drift region (11) and the third trench gate electrode (53) in the vertical direction. The fifth partial region (15e) is located laterally adjacent the third trench gate electrode (53) between the first semiconductor drift region (11) and the fourth semiconductor region (14) in the vertical direction.
-
公开(公告)号：EP4064365A2
公开(公告)日：2022-09-28
申请号：EP22158409.7
申请日：2022-02-24
IPC分类号： H01L29/739 , H01L29/06 , H01L29/423
摘要： A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.017 秒)
