公开(公告)号：EP4210108A1

公开(公告)日：2023-07-12

申请号：EP22187146.0

申请日：2022-07-27

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： GEJO, Ryohei

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/739

摘要： A semiconductor device (1, 2, 3), in particular an IGBT, comprises an active region (AR) as well as a termination region (TR) and includes a semiconductor part (10), first and second electrodes (20, 30) and a control electrode (40). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The control electrode (40) is provided between the semiconductor part (10) and the second electrode (30). The device comprises a drift region (11), a collector region (20), a body region (13) with contact (16) and an emitter region (15). The termination region (TR) comprises a doped region (21) at the upper surface of the device and a doped layer (23) at the lower surface of the device, which are both doped to the same conductivity type as the collector. The upper doped region (21) extends further outward than the lower doped region (23).

公开(公告)号：EP3993061A1

公开(公告)日：2022-05-04

申请号：EP21192855.1

申请日：2021-08-24

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： GEJO, Ryohei ,  SAKANO, Tatsunori ,  KATO, Takahiro

IPC分类号： H01L29/08 ,  H01L29/423 ,  H01L29/739

摘要： According to one embodiment, a semiconductor device includes an emitter electrode (51), a collector electrode (52), an emitter-side trench gate electrode (53) and a collector-side trench gate electrode (54). It furthermore includes a semiconductor member, and first and second insulating members. The semiconductor member is located between the emitter and collector electrodes, and includes a first (n-type) semiconductor drift region (11), a second (p-type) semiconductor region (12) between the first semiconductor region and the first electrode, a third (n-type) semiconductor region (13) between the second semiconductor region and the first electrode, a fourth (p-type) semiconductor region (14) between the second semiconductor region and the first electrode, a fifth (p-type) semiconductor region (15) between the first semiconductor region and the second electrode, a sixth (n-type) semiconductor region (16) between the fifth semiconductor region and the second electrode, and a seventh (p-type) semiconductor region (17) between the fifth semiconductor region and the second electrode. The p-type body contact regions at the emitter (14) and at the collector side (17) may be different by a factor of 20 as far as their doping levels or their volumes are concerned.

公开(公告)号：EP4250365A1

公开(公告)日：2023-09-27

申请号：EP22194293.1

申请日：2022-09-07

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： MATSUDAI, Tomoko ,  IWAKAJI, Yoko ,  GEJO, Ryohei

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

摘要： A semiconductor device according to the embodiment includes: a transistor, in particular an IGBT, region (26) including a first trench gate (51), a second trench gate (52) and a third trench gate (53); a diode region (102) including a trench and a conductive layer (55) provided in the trench; a boundary region (103) including a fourth trench gate (54), the boundary region being provided between the transistor region and the diode region; a first electrode pad electrically connected to the first trench gate; a second electrode pad electrically connected to the second trench gate; and a third electrode pad electrically connected to the third and to the fourth trench gate.

公开(公告)号：EP4231357A1

公开(公告)日：2023-08-23

申请号：EP22182824.7

申请日：2022-07-04

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： GEJO, Ryohei ,  MATSUDAI, Tomoko ,  IWAKAJI, Yoko

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/739

摘要： S1 ≤ S2 being satisfied, where S1 is a surface area of the first gate electrode and the third semiconductor layer facing each other via the first insulating film, S2 is a surface area of the second gate electrode and the third semiconductor layer facing each other via the second insulating film, and S3 is a surface area of the third gate electrode and the third semiconductor layer facing each other via the third insulating film.

公开(公告)号：EP4340039A1

公开(公告)日：2024-03-20

申请号：EP23154443.8

申请日：2023-02-01

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： GEJO, Ryohei

IPC分类号： H01L29/739 ,  H01L29/08 ,  H01L29/06

摘要： A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face; a first semiconductor region of a first conductive type in the semiconductor layer, in contact with the second face, and including a first portion having a first minimum width, a second portion having a second minimum width smaller than the first minimum width, and a third portion connecting the first portion and the second portion and having a third minimum width smaller than the second minimum width; a plurality of second semiconductor regions of a second conductive type in contact with the second face; a third semiconductor region of the second conductive type between the first semiconductor region and the first face; a fourth semiconductor region of the first conductive type; a fifth semiconductor region of the second conductive type; a gate electrode facing the fourth semiconductor region.

公开(公告)号：EP4336566A1

公开(公告)日：2024-03-13

申请号：EP23152380.4

申请日：2023-01-19

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： IWAKAJI, Yoko ,  KAWAMURA, Keiko ,  GEJO, Ryohei ,  FUSE, Kaori

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L21/331 ,  H01L21/329

摘要： A vertical trench-gate IGBT (10B) with integral FWD (10A) is described. According to one embodiment, the FWD part (10A) includes first (51) and second (52) main electrodes, a first conductive member (61) serving as a trench field plate, a semiconductor member, and an insulating member (41). The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion (52a), which is recessed in the anode region of the diode. The first conductive portion is electrically connected to the first conductive region. The first conductive member (61) is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor (drift) region (11) of a first conductive type, a second semiconductor (anode) region (12) of a second conductive type, a third semiconductor (contact) region (13) of the second conductive type, a fourth semiconductor region (14) of the first conductive type, and a fifth semiconductor region (15) of the first conductive type, located at the bottom end of the recessed anode electrode (52a).