SILICON NITRIDE SINTERED BODY AND HIGH-TEMPERATURE-RESISTANT MEMBER USING THE SAME
    1.
    发明公开
    SILICON NITRIDE SINTERED BODY AND HIGH-TEMPERATURE-RESISTANT MEMBER USING THE SAME 审中-公开
    氮化硅烧结体和使用该材料的耐高温构件

    公开(公告)号:EP3281927A1

    公开(公告)日:2018-02-14

    申请号:EP16776431.5

    申请日:2016-03-28

    IPC分类号: C04B35/584 F16C33/32

    摘要: A sintered silicon nitride object which comprises crystal grains of silicon nitride and a grain boundary phase, characterized in that the crystal grains of silicon nitride each are covered with the grain boundary phase and the grain boundary phase has a width of 0.2 nm or greater. Preferably, the width of the grain boundary phase is 0.2-5 nm. The content of the grain boundary phase is preferably 15 mass% or less. Due to the constitution, it is possible to provide a sintered silicon nitride object in which the grain boundary phase can be inhibited from deteriorating in high-temperature environments and which has high durability at high temperatures. This sintered silicon nitride object is suitable for use as a material constituting high-temperature-durable members to be used at a surrounding temperature of 300°C or higher.

    摘要翻译: 包含氮化硅晶粒和晶界相的烧结氮化硅物体,其特征在于氮化硅晶粒各自被晶界相覆盖,晶界相的宽度为0.2nm或更大。 优选地,晶界相的宽度为0.2-5nm。 晶界相的含量优选为15质量%以下。 由此,可以提供能够抑制高温环境下的晶界相的劣化,高温下的耐久性高的烧结氮化硅制物体。 该烧结氮化硅物质适合用作构成在300℃以上的环境温度下使用的耐高温部件的材料。