CHARGE CONVERSION FILM FOR ION BEAM CHARGE CONVERSION DEVICE
    3.
    发明公开
    CHARGE CONVERSION FILM FOR ION BEAM CHARGE CONVERSION DEVICE 审中-公开
    离子束电荷转换装置的电荷转换膜

    公开(公告)号:EP3285263A1

    公开(公告)日:2018-02-21

    申请号:EP16780098.6

    申请日:2016-04-14

    摘要: The present invention aims to provide a high-quality charge stripping film for a charge stripping device of ion beam, that has high heat resistance and high thermal conductivity, and that has high quality to the degree of withstanding a beam irradiation over a long period of time. The present invention is a charge stripping film for a charge stripping device of ion beam, wherein the charge stripping film is a carbon film produced by a polymer annealing method, and has a film thickness of not less than 10 µ m and not more than 150 µ m. The present invention comprises a charge stripping film for a charge stripping device of ion beam, wherein the charge stripping film is a carbon film having a thermal conductivity in a film surface direction at 25° C of not less than 300 W/mK, and has a film thickness of not less than 10 µ m and not more than 150 µ m. These stripping films preferably have a density of not less than 0.90 g/cm 3 and not more than 2.26 g/cm 3 , a weight per unit area of not less than 1.5 mg/cm 2 and not more than 30 mg/cm 2 , or an area of not less than 4 cm 2 .

    摘要翻译: 本发明的目的在于提供一种用于离子束电荷剥离装置的高质量的充电剥离膜,其具有高耐热性和高导热性,并且在长时间耐受束照射的程度上具有高质量。 时间。 本发明是用于离子束的电荷剥离装置的电荷剥离膜,其中电荷剥离膜是通过聚合物退火法制造的碳膜,并且具有不小于10μm且不大于150μm的膜厚度 。 本发明包括用于离子束的电荷剥离装置的电荷剥离膜,其中该电荷剥离膜是在25℃下在膜表面方向上的热导率不小于300W / mK的碳膜,并且具有 膜厚不小于10μm且不大于150μm。 这些剥离膜的密度优选为不小于0.90g / cm 3且不大于2.26g / cm 3,单位面积重量不小于1.5mg / cm 2且不大于30mg / cm 2,或者面积 不小于4平方厘米。

    CHARGE CONVERSION FILM FOR ION BEAM
    7.
    发明公开
    CHARGE CONVERSION FILM FOR ION BEAM 审中-公开
    用于离子束的电荷转换膜

    公开(公告)号:EP3285264A1

    公开(公告)日:2018-02-21

    申请号:EP16780102.6

    申请日:2016-04-14

    摘要: The objective of the present invention is providing a charge stripping film for an ion beam, the film is unlikely to be damaged or radioactivated under a high intensity beam irradiation, the film has high durability, and capability of controlling film thickness to be less than 10 µ m without any trouble. The present invention enables to prepare a charge stripping film for an ion beam, comprising a single layer body of a graphitic film having a carbon component of not less than 96 at% and a thermal conductivity in the film surface direction at 25° C of not less than 800 W/mK, or a laminated body of the graphitic film with the thickness of not less than 100 nm and less than 10 µn.

    摘要翻译: 本发明的目的是提供用于离子束的电荷剥离膜,该膜在高强度光束照射下不可能被损坏或放射性活化,该膜具有高耐久性,并且控制膜厚度的能力小于10 μm没有任何问题。 本发明能够制备用于离子束的电荷剥离膜,其包括具有不低于96原子%的碳成分和25℃下的膜表面方向上的热导率的单层石墨膜 小于800W / mK,或者石墨膜的厚度不小于100nm且小于10μm的层压体。