-
1.发明授权
公开(公告)号：EP0862793B1
公开(公告)日：2005-11-16
申请号：EP97937773.6
申请日：1997-09-12
发明人： McGARVEY, Brian, Patrick , DEANE, Steven, Charles , FRENCH, Ian, Douglas , TRAINOR, Michael, Joseph
IPC分类号： H01L29/43 , H01L27/02 , H01L21/283
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/458 , H01L29/4908
摘要： A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.
-
公开(公告)号：EP0937309A2
公开(公告)日：1999-08-25
申请号：EP98905556.0
申请日：1998-03-12
CPC分类号： H01L27/14643
摘要： An image sensor comprising an array of pixels (2), each pixel (2) including a pin or nip photodiode P. At least the intrinsic semiconductor layer of the photodiodes of a group of pixels is shared between those pixels and acts as a barrier to reduce edge leakage currents. A group of pixels may be a row of pixels, or may be all pixels of the array.
-
公开(公告)号：EP0870215A1
公开(公告)日：1998-10-14
申请号：EP97939123.0
申请日：1997-09-19
发明人： OVERSLUIZEN, Gerrit , GEUNS, Thomas, Cleophas, Theodorus , McGARVEY, Brian, Patrick , DEANE, Steven, Charles
CPC分类号： G02F1/1365 , G02F1/1368 , H01L45/00 , Y10S438/957
摘要： Thin-film switching elements (20, 21) of a display device or the like include a first electrode (22, 23) on a substrate (11) and a layer of switching material (24, 25) on the first electrode. These switching elements may be semiconductor pin or Schottky diodes, or MIMs, or TFTs. The switching material is typically α-Si:H in the case of the semiconductor diodes and TFTs, and tantalum oxide or silicon nitride in the case of the MIMs. An auxiliary layer (28, 29) of insulating material is provided between the first electrode (22, 23) and the layer of switching material (24, 25), leaving an edge (30, 31) of the first electrode uncovered, so that the layer of switching material is connected to this edge only. The switching elements with this construction can be patterned using an inexpensive proximity printer, and have a low capacitance value, so counter-acting kickback and crosstalk which can occur in a switching matrix, e.g. in the display of television pictures.
-
4.发明公开
公开(公告)号：EP0862793A2
公开(公告)日：1998-09-09
申请号：EP97937773.0
申请日：1997-09-12
发明人： McGARVEY, Brian, Patrick , DEANE, Steven, Charles , FRENCH, Ian, Douglas , TRAINOR, Michael, Joseph
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/458 , H01L29/4908
摘要： A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.
-
-
-
搜索结果
4 条记录 (耗时 0.015 秒)
