-
公开(公告)号：EP0974164A2
公开(公告)日：2000-01-26
申请号：EP98951630.7
申请日：1998-11-13
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/41733 , H01L29/66757 , H01L29/78603 , H01L29/78666 , H01L29/78669
摘要： A thin film transistor (10) in an electronic device such as an active matrix display panel having an intrinsic amorphous silicon semiconductor layer (22) providing a channel region (23) between source and drain electrodes (14, 16) includes directly adjacent to the side of the semiconductor layer (22) remote from the gate electrode (25) at the channel region (23) a layer (20) of amorphous semiconductor material which has a high defect density and low conductivity that serves to provide recombination centres for photogenerated carriers. Leakage problems due to the photoconductive properties of the intrinsic semiconductor material are then reduced. Conveniently, an hydrogenated silicon rich amorphous silicon alloy (e.g. nitride etc) can be used for the recombination centre layer (20).
-
公开(公告)号：EP0897552A1
公开(公告)日：1999-02-24
申请号：EP97944070.0
申请日：1997-10-30
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/1368
摘要： In a flat panel display or other large-area electronics device, each cell of a matrix comprises a thin-film switching transistor (T1) connected between a respective column conductor (CC) and a respective cell electrode (CLC). Each cell also has a storage capacitor (CS) formed with the row conductor (RR (n-1); 14b) of a neighbouring cell by a lower conductive film part (11c). In order to reduce the effect of parasitic thin-film transistors (T2, T3) formed by these row conductors (RR) between said lower conductive film part (11c) and neighbouring column conductors (CC), the parasitic transistor channel regions are dimensioned to have a length (L) greater than their respective width (W; W1), and their width (W; W1) is preferably made smaller than the width (W2) of the row conductor (RR; 14b) and its semiconductor film pattern (12) in the area of its storage capacitor (CS).
-
3.发明授权
公开(公告)号：EP0862793B1
公开(公告)日：2005-11-16
申请号：EP97937773.6
申请日：1997-09-12
发明人： McGARVEY, Brian, Patrick , DEANE, Steven, Charles , FRENCH, Ian, Douglas , TRAINOR, Michael, Joseph
IPC分类号： H01L29/43 , H01L27/02 , H01L21/283
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/458 , H01L29/4908
摘要： A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.
-
公开(公告)号：EP0979527A2
公开(公告)日：2000-02-16
申请号：EP98954698.1
申请日：1998-12-03
IPC分类号： H01L21/205 , H01L21/336
CPC分类号： H01L29/66765 , H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L29/78666
摘要： In an electronic device, such as an active matrix display device or the like, comprising a top gate amorphous silicon thin film transistor (10) in which one or both of the source and drain electrodes (15, 16) are of transparent conductive material such as ITO, the PECVD deposited semiconductor layer (18) extending over and between the source and drain electrodes of the TFT is formed as first and second sub-layers (18A, 18B), using different source gas compositions. A noble inert gas such as helium is used as dilutant in forming the first sub-layer adjacent the source and drain electrodes to avoid reduction problems while hydrogen is used as the dilutant in forming the second sub-layer to achieve high stability and mobility characteristics in the completed transistor.
-
公开(公告)号：EP0870215A1
公开(公告)日：1998-10-14
申请号：EP97939123.0
申请日：1997-09-19
发明人： OVERSLUIZEN, Gerrit , GEUNS, Thomas, Cleophas, Theodorus , McGARVEY, Brian, Patrick , DEANE, Steven, Charles
CPC分类号： G02F1/1365 , G02F1/1368 , H01L45/00 , Y10S438/957
摘要： Thin-film switching elements (20, 21) of a display device or the like include a first electrode (22, 23) on a substrate (11) and a layer of switching material (24, 25) on the first electrode. These switching elements may be semiconductor pin or Schottky diodes, or MIMs, or TFTs. The switching material is typically α-Si:H in the case of the semiconductor diodes and TFTs, and tantalum oxide or silicon nitride in the case of the MIMs. An auxiliary layer (28, 29) of insulating material is provided between the first electrode (22, 23) and the layer of switching material (24, 25), leaving an edge (30, 31) of the first electrode uncovered, so that the layer of switching material is connected to this edge only. The switching elements with this construction can be patterned using an inexpensive proximity printer, and have a low capacitance value, so counter-acting kickback and crosstalk which can occur in a switching matrix, e.g. in the display of television pictures.
-
6.发明公开
公开(公告)号：EP0862793A2
公开(公告)日：1998-09-09
申请号：EP97937773.0
申请日：1997-09-12
发明人： McGARVEY, Brian, Patrick , DEANE, Steven, Charles , FRENCH, Ian, Douglas , TRAINOR, Michael, Joseph
CPC分类号： H01L27/124 , H01L27/1214 , H01L29/458 , H01L29/4908
摘要： A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.
-
公开(公告)号：EP0897552B1
公开(公告)日：2007-01-03
申请号：EP97944070.8
申请日：1997-10-30
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/1368
摘要： In a flat panel display or other large-area electronics device, each cell of a matrix comprises a thin-film switching transistor (T1) connected between a respective column conductor (CC) and a respective cell electrode (CLC). Each cell also has a storage capacitor (CS) formed with the row conductor (RR (n-1); 14b) of a neighbouring cell by a lower conductive film part (11c). In order to reduce the effect of parasitic thin-film transistors (T2, T3) formed by these row conductors (RR) between said lower conductive film part (11c) and neighbouring column conductors (CC), the parasitic transistor channel regions are dimensioned to have a length (L) greater than their respective width (W; W1), and their width (W; W1) is preferably made smaller than the width (W2) of the row conductor (RR; 14b) and its semiconductor film pattern (12) in the area of its storage capacitor (CS).
-
8.发明公开
公开(公告)号：EP0934549A1
公开(公告)日：1999-08-11
申请号：EP98928498.0
申请日：1998-07-09
CPC分类号： H01L31/0392 , G02F1/1333 , H01L31/02327 , Y02E10/50 , Y10T428/12993 , Y10T428/249953 , Y10T428/249969 , Y10T428/24999 , Y10T428/31612
摘要： A light-weight substrate (10) for thin film, large area electronic devices such as active matrix display devices, image sensing arrays and the like comprises a layer of rigid, cellular material (12) bonded to a comparatively thin glass sheet (11) on whose surface thin film circuit elements are provided. An aerogel material of higher than usual density can be used for the cellular layer. An array of microlenses may be provided between the cellular layer and the thin glass sheet.
摘要翻译： 用于薄膜的轻量基板（10），诸如有源矩阵显示装置，图像感测阵列等的大面积电子装置包括结合到相对薄的玻璃板（11）的刚性多孔材料层（12） 在其表面上设置有薄膜电路元件。 高于通常密度的气凝胶材料可用于细胞层。 可以在细胞层和薄玻璃片之间提供微透镜阵列。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.012 秒)
