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公开(公告)号：EP1166342A1
公开(公告)日：2002-01-02
申请号：EP00989595.4
申请日：2000-12-29
发明人： YEH, Edward
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , G03F7/42
摘要： Photoresist removal from a semiconductor chip is enhanced via a method and system that remove photoresist without causing photoresist popping and without causing undesirable etching of other structures on the chip. According to an example embodiment of the present invention, a photoresist mask layer formed on the substrate of a semiconductor wafer is used as a mask for etching a portion f the substrate. The semiconductor wafer is then ashed and an upper portion of the photoresist layer is removed that would otherwise pop and leave residue on the wafer. The remaining photoresist can then be removed in a conventional high-temperature asher.
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2.发明公开REMOVAL OF SILICON OXYNITRIDE MATERIAL USING A WET CHEMICAL PROCESS AFTER GATE ETCH PROCESSING 审中-公开SILICON ENFERNUNG氮氧化物用于栅蚀刻步骤的方法，使用湿式化学过程来
公开(公告)号：EP1190444A2
公开(公告)日：2002-03-27
申请号：EP00992786.4
申请日：2000-11-07
发明人： YEH, Edward
IPC分类号： H01L21/31
CPC分类号： H01L21/76224 , H01L21/0276 , H01L21/28123 , H01L21/31111 , H01L21/3143 , H01L21/32137 , H01L21/32139
摘要： A method is presented for forming a transistor gate structure (41, 42). A gate oxide layer (41) is formed. Gate material (42) is deposited on the gate oxide layer (41). A layer of silicon oxynitride (43) is deposited on the gate material (42). The layer of silicon oxynitride (43), the gate material (42) and the gate oxide layer (41) are etched to form a gate structure (41, 42). A silicon oxynitride region (43) remains on top of the gate structure (41, 42). A wet chemical process is performed to remove the silicon oxynitride region (43) from the top of the gate structure (41, 42). After performing the wet chemical process, spacers (61, 62) are formed around the gate structure (41, 42).
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3.发明公开NITRIDED RE-OXIDISED POLYSILICON GATE TO IMPROVE HOT CARRIER PERFORMANCE 审中-公开氮化再氧化多晶硅栅极，以改善热货物承运性能
公开(公告)号：EP1186010A1
公开(公告)日：2002-03-13
申请号：EP00992188.3
申请日：2000-11-18
发明人： YEH, Edward , LAPARRA, Olivier
IPC分类号： H01L21/28
CPC分类号： H01L21/28247 , H01L21/3144
摘要： A method is presented in which nitrogen-based gas is incorporated in polysilicon gate re-oxidation to improve hot carrier performance. A gate oxide layer (21) is formed. Gate material (31) is deposited on the gate oxide layer (21). The gate material (31) is etched to form a gate structure (42). The gate oxide layer (21) and the gate are re-oxidized. During re-oxidation, nitrogen-based gas is introduced to nitridize re-oxidized portions (53) of the gate oxide layer (21).
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