专利检索 ap:("Koninklijke Philips N.V." OR "Philips Lumileds Lighting Company, LLC.") AND inv:"WATANABE, Satoshi" 第 1 页

1.

发明授权
III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION 有权
标题翻译：具有双异质结构发光区的III-氮化物发光器件

公开(公告)号：EP1922766B1

公开(公告)日：2017-10-11

申请号：EP06795665.6

申请日：2006-08-16

申请人： Koninklijke Philips N.V. , Philips Lumileds Lighting Company, LLC.

发明人： SHEN, Yu-Chen , GARDNER, Nathan, F. , WATANABE, Satoshi , KRAMES, Michael, R. , MUELLER, Gerd, O.

IPC分类号： H01L33/02 , H01L33/32 , H01L33/06

CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325

2.

发明公开
III-NITRIDE LIGHT-EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT-EMITTING REGION 有权
标题翻译：枸杞子三氮UNG UNG UNG UNG UNG UNG UNG UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR UR

公开(公告)号：EP1922766A1

公开(公告)日：2008-05-21

申请号：EP06795665.6

申请日：2006-08-16

申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company, LLC.

发明人： SHEN, Yu-Chen , GARDNER, Nathan, F. , WATANABE, Satoshi , KRAMES, Michael, R. , MUELLER, Gerd, O.

IPC分类号： H01L33/00

CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325

摘要： A Ill-nitride light emitting layer is disposed between an n-type region and a p- type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.

摘要翻译： III族氮化物发光层设置在n型区域和p型区域之间。发光层是掺杂的厚层。在一些实施例中，发光层夹在两个掺杂间隔层之间。