公开(公告)号：EP1932186B1

公开(公告)日：2017-08-02

申请号：EP06809397.0

申请日：2006-09-25

申请人： Koninklijke Philips N.V. ,  Philips Lumileds Lighting Company, LLC.

发明人： KRAMES, Michael, R. ,  GARDNER, Nathan, F. ,  EPLER, John

IPC分类号： C30B25/18 ,  C30B29/40 ,  H01L33/00 ,  H01L21/20 ,  H01L21/762

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

公开(公告)号：EP1922766B1

公开(公告)日：2017-10-11

申请号：EP06795665.6

申请日：2006-08-16

申请人： Koninklijke Philips N.V. ,  Philips Lumileds Lighting Company, LLC.

发明人： SHEN, Yu-Chen ,  GARDNER, Nathan, F. ,  WATANABE, Satoshi ,  KRAMES, Michael, R. ,  MUELLER, Gerd, O.

IPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/06

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

公开(公告)号：EP1932187A2

公开(公告)日：2008-06-18

申请号：EP06821126.7

申请日：2006-09-22

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company, LLC.

发明人： KRAMES, Michael, R. ,  GARDNER, Nathan, F. ,  EPLER, John, E.

IPC分类号： H01L33/00

CPC分类号： H01L21/2654 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

公开(公告)号：EP1894256A1

公开(公告)日：2008-03-05

申请号：EP06756133.2

申请日：2006-06-14

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company LLC

发明人： WIERER, Jonathan, J., Jr. ,  KRAMES, Michael, R. ,  GARDNER, Nathan, F.

IPC分类号： H01L33/00 ,  G02B6/13 ,  G02B6/122 ,  C30B29/60

CPC分类号： C30B29/60 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/34333

摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

公开(公告)号：EP2567411A1

公开(公告)日：2013-03-13

申请号：EP11720329.9

申请日：2011-04-08

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company LLC

发明人： GARDNER, Nathan, F. ,  DAVID, Aurelien, J., F. ,  SHCHEKIN, Oleg, B.

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC分类号： H01L33/50 ,  H01L33/007 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element (30) comprising a wavelength converting material disposed in a transparent material, a seed layer (34) comprising a material on which Ill -nitride material will nucleate, and a bonding (32) layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a Ill -nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.

公开(公告)号：EP2329517A1

公开(公告)日：2011-06-08

申请号：EP09792798.2

申请日：2009-09-21

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  Philips Lumileds Lighting Company LLC ,  Koninklijke Philips Electronics N.V.

发明人： LETERTRE, Fabrice ,  FAURE, Bruce ,  KRAMES, Michael, R. ,  GARDNER, Nathan, F.

IPC分类号： H01L21/02

CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

公开(公告)号：EP1932186A1

公开(公告)日：2008-06-18

申请号：EP06809397.0

申请日：2006-09-25

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company, LLC.

发明人： KRAMES, Michael, R. ,  GARDNER, Nathan, F. ,  EPLER, John

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host subtrate and a seed layer bonded to the host substrate is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host substrate to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host substrate ma be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，键合层将主体结合到种子层。 种子层可以比用于缓解半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在籽晶层和结合层之间滑动而消除， 两层。 在一些实施例中，通过蚀刻掉粘结层，可以将主体与半导体结构和晶种层分离。

公开(公告)号：EP1922766A1

公开(公告)日：2008-05-21

申请号：EP06795665.6

申请日：2006-08-16

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company, LLC.

发明人： SHEN, Yu-Chen ,  GARDNER, Nathan, F. ,  WATANABE, Satoshi ,  KRAMES, Michael, R. ,  MUELLER, Gerd, O.

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

摘要： A Ill-nitride light emitting layer is disposed between an n-type region and a p- type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.

摘要翻译： III族氮化物发光层设置在n型区域和p型区域之间。 发光层是掺杂的厚层。 在一些实施例中，发光层夹在两个掺杂间隔层之间。