公开(公告)号：EP3345211A1

公开(公告)日：2018-07-11

申请号：EP16770815.5

申请日：2016-08-30

申请人： L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： SURLA, Vijay ,  GUPTA, Rahul ,  PALLEM, Venkateswara R.

IPC分类号： H01L21/311 ,  C07C251/08 ,  C07C251/26 ,  C07C255/10

CPC分类号： H01L21/31144 ,  C07C251/08 ,  C07C251/26 ,  C07C255/10 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/31127 ,  H01L21/31133 ,  H01L21/31138 ,  H01L27/10855 ,  H01L27/115

摘要： A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.

公开(公告)号：EP3563406A1

公开(公告)日：2019-11-06

申请号：EP17889218.8

申请日：2017-12-29

申请人： L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： SURLA, Vijay ,  GUPTA, Rahul ,  SUN, Hui ,  PALLEM, Venkateswara R. ,  STAFFORD, Nathan ,  MARCHEGIANI, Fabrizio ,  OMARJEE, Vincent M. ,  ROYER, James

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/115