Method and apparatus for plating semiconductor wafers
    1.
    发明公开
    Method and apparatus for plating semiconductor wafers 审中-公开
    用于半导体晶片的电镀方法和装置

    公开(公告)号:EP1612855A3

    公开(公告)日:2010-12-01

    申请号:EP05253927.7

    申请日:2005-06-24

    IPC分类号: H01L21/288 C25D7/12 C25D17/12

    摘要: First and second electrodes (107A,107B) are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer (101) held by the wafer support. An anode (109) is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus (111) between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    Electroplating head and method for operating the same
    2.
    发明公开
    Electroplating head and method for operating the same 审中-公开
    格拉布鲁奇

    公开(公告)号:EP1612298A2

    公开(公告)日:2006-01-04

    申请号:EP05253928.5

    申请日:2005-06-24

    IPC分类号: C25D17/14

    摘要: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.

    摘要翻译: 提供一种包括具有流体入口和流体出口的室的电镀头。 该室被构造成包含从流体入口到流体出口的电镀溶液流。 电镀头还包括设置在室内的阳极。 阳极被配置为电连接到电源。 电镀头还包括设置在流体出口处的多孔电阻材料,使得电镀溶液的流动需要穿过多孔电阻材料。

    Method and apparatus for plating semiconductor wafers
    3.
    发明公开
    Method and apparatus for plating semiconductor wafers 审中-公开
    Verfahren und Vorrichtung zum Plattieren von Halbleiter-Wafern

    公开(公告)号:EP1612855A2

    公开(公告)日:2006-01-04

    申请号:EP05253927.7

    申请日:2005-06-24

    IPC分类号: H01L21/288

    摘要: First and second electrodes (107A,107B) are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer (101) held by the wafer support. An anode (109) is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus (111) between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    摘要翻译: 第一和第二电极(107A,107B)分别设置在靠近晶片支撑件的周边的第一和第二位置处,其中第一和第二位置相对于晶片支撑件彼此基本相对。 第一和第二电极中的每一个可以被移动以与由晶片支撑件保持的晶片(101)电连接和断开。 阳极(109)设置在晶片上方并靠近晶片,使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时,通过阳极和晶片之间的弯液面(111)施加电流。 此外,当阳极移动到晶片上时,第一和第二电极被控制以与晶片连接,同时确保阳极不通过连接的电极。

    Electroplating head and method for operating the same
    5.
    发明公开
    Electroplating head and method for operating the same 审中-公开
    电镀头及其操作方法

    公开(公告)号:EP1612298A3

    公开(公告)日:2011-06-08

    申请号:EP05253928.5

    申请日:2005-06-24

    IPC分类号: C25D17/14 C25D5/02

    摘要: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.

    摘要翻译: 提供了包括具有流体入口和流体出口的腔室的电镀头。 腔室构造成容纳从流体入口到流体出口的电镀溶液流。 电镀头还包括设置在腔室内的阳极。 阳极被配置为电连接到电源。 电镀头还包括设置在流体出口处的多孔电阻材料,使得电镀液的流动需要穿过多孔电阻材料。

    Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
    7.
    发明公开
    Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 有权
    由安装在靠近晶片表面的入口和出口的几个装置的方法和设备用于干燥半导体晶片表面

    公开(公告)号:EP1801851A2

    公开(公告)日:2007-06-27

    申请号:EP07007143.6

    申请日:2003-09-30

    IPC分类号: H01L21/00

    摘要: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    摘要翻译: 一项所述的基片制备系统的许多实施例被提供,其包括具有头部表面的头部,其中所述头部表面邻近于基板的表面。 因此,该系统包括用于通过头输送第一流体的基板的表面上的第一导管,以及用于通过所述头部,其中,所述第二流体是不同于第一输送第二流体到衬底的表面上的第二管道 流体。 因此,该系统包括用于从衬底的表面去除所述第一流体和第二流体,其中所述第一导管,第二导管和第三导管动作基本上同时的第三导管。 在一个替代实施例中,提供并包括在基板的表面上产生液体弯液面并施加声能到所述流体弯液面用于处理基板的方法。 因此,该方法包括:在表面上移动的液体弯月面的衬底到衬底的表面处理。