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    Manifold for processing a surface of a substrate using multiple process windows
    1.
    发明公开
    Manifold for processing a surface of a substrate using multiple process windows 有权
    熊猫iner iner ern ern ern ern ern ern ern ern ern ern ern ern ern ern ern

    公开(公告)号：EP2117033A1

    公开(公告)日：2009-11-11

    申请号：EP09168725.1

    申请日：2003-09-30

    申请人： LAM Research Corporation

    发明人： Woods, Carl ,  Garcia, James P. ,  De Larios, John ,  Ravkin, Mike ,  Redeker, Fred C. ,  Nickhou, Afshin

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： A manifold for use in preparing a surface of a substrate, comprising:
    the manifold defined by a head that includes,
    a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and
    a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold;
    wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

    摘要翻译： 一种用于制备基底表面的歧管，包括：由头部限定的歧管，该歧管包括：歧管中的第一部分，具有多个导管，用于将第一流体输送到基底表面上;多个导管 用于从所述基板的表面移除所述第一流体以在所述歧管的所述第一部分中限定第一流体窗口，所述第一流体弯月面被配置为保持在所述歧管的所述第一过程窗口中; 并且所述歧管中的第二部分具有多个导管，以将第二流体输送到所述基底的表面上;以及多个导管，用于从所述基底的表面移除所述第二流体，以在所述第二部分的第二部分中限定第二过程窗口 歧管，构造成保持在歧管的第二处理窗口中的第二流体弯月面; 其中所述头部可操作地放置在所述基板的表面附近，以便朝向所述基板的表面定向所述第一处理窗口和所述第二处理窗口。

    Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
    5.
    发明公开
    Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 有权
    由安装在靠近晶片表面的入口和出口的几个装置的方法和设备用于干燥半导体晶片表面

    公开(公告)号：EP1801851A2

    公开(公告)日：2007-06-27

    申请号：EP07007143.6

    申请日：2003-09-30

    申请人： LAM RESEARCH CORPORATION

    发明人： De Larios, John M. ,  Garcia, James P. ,  Woods, Carl ,  Ravkin, Mike ,  Redeker, Fritz ,  Boyd, John ,  Nickhou, Afshin

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    摘要翻译： 一项所述的基片制备系统的许多实施例被提供，其包括具有头部表面的头部，其中所述头部表面邻近于基板的表面。 因此，该系统包括用于通过头输送第一流体的基板的表面上的第一导管，以及用于通过所述头部，其中，所述第二流体是不同于第一输送第二流体到衬底的表面上的第二管道 流体。 因此，该系统包括用于从衬底的表面去除所述第一流体和第二流体，其中所述第一导管，第二导管和第三导管动作基本上同时的第三导管。 在一个替代实施例中，提供并包括在基板的表面上产生液体弯液面并施加声能到所述流体弯液面用于处理基板的方法。 因此，该方法包括：在表面上移动的液体弯月面的衬底到衬底的表面处理。