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921 条记录 (耗时 0.019 秒)

    SYSTEMS AND METHODS FOR PULSE WIDTH MODULATED DOSE CONTROL
    1.
    发明公开
    SYSTEMS AND METHODS FOR PULSE WIDTH MODULATED DOSE CONTROL 审中-公开

    公开(公告)号：EP4391011A2

    公开(公告)日：2024-06-26

    申请号：EP24174495.2

    申请日：2018-09-21

    申请人： LAM Research Corporation

    发明人： GREGOR, Mariusch

    IPC分类号： H01J37/32

    CPC分类号： H01L21/6719 ,  H01L21/67253 ,  C23C16/45544 ,  C23C16/45557 ,  H01J37/32449 ,  H01L21/67028 ,  H01L21/67017

    摘要： A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.

    DYNAMIC SHEATH CONTROL WITH EDGE RING LIFT
    4.
    发明公开
    DYNAMIC SHEATH CONTROL WITH EDGE RING LIFT 审中-公开

    公开(公告)号：EP4273912A3

    公开(公告)日：2024-01-03

    申请号：EP23187534.5

    申请日：2019-11-14

    申请人： LAM Research Corporation

    发明人： HIESTER, Jacob, Lee ,  BLANK, Richard, M. ,  BAILEY, Curtis, W. ,  JANICKI, Michael., J.

    IPC分类号： C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/50 ,  H01L21/687

    摘要： A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.

    METHOD FOR DEPOSITING HIGHLY DOPED ALUMINUM NITRIDE PIEZOELECTRIC MATERIAL
    5.
    发明公开
    METHOD FOR DEPOSITING HIGHLY DOPED ALUMINUM NITRIDE PIEZOELECTRIC MATERIAL 审中-公开

    公开(公告)号：EP4224543A1

    公开(公告)日：2023-08-09

    申请号：EP22155617.8

    申请日：2022-02-08

    申请人： Lam Research Corporation

    发明人： Dekkers, Jan Matthijn ,  Hopman, Willem Cornelis Lambert ,  Heuver, Jeroen Aaldert

    IPC分类号： H01L41/316 ,  C23C14/06 ,  C23C14/28 ,  C23C14/34

    摘要： A method for manufacturing a doped wurtzite aluminium nitride piezoelectric thin film is disclosed which comprises:
    - providing a deposition device, such as a pulsed laser deposition device or a physical vapor deposition device, with a target (1) and a substrate (2), wherein the target material is a doped aluminum nitride composite and wherein the doping element is a rare earth element, preferably scandium;
    - depositing a first layer (5) of the target material on the substrate by operating the deposition device, wherein the kinetic energy of the plasma particles being deposited is above a first threshold value; and
    - depositing a second layer (6) of the target material on top of the first layer by operating the deposition device, wherein the kinetic energy of the plasma particles being deposited is below a second threshold value,
    wherein the first threshold value is larger than the second threshold value.

    BOTTOM EDGE RINGS
    7.
    发明公开
    BOTTOM EDGE RINGS 审中-公开

    公开(公告)号：EP4102551A1

    公开(公告)日：2022-12-14

    申请号：EP22188723.5

    申请日：2017-11-21

    申请人： LAM Research Corporation

    发明人： RATHNASINGHE, Hiran Rajitha ,  TOKAIRIN, Shawn E S ,  MCCHESNEY, Jon

    IPC分类号： H01L21/687 ,  H01L21/683 ,  H01L21/67

    摘要： A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respective lift pins for raising and lowering the edge ring. Each of the guide channels has a cavity on the lower surface of the bottom ring, wherein the cavities have a diameter greater than the guide channel.