公开(公告)号：EP1754252A1

公开(公告)日：2007-02-21

申请号：EP05760834.1

申请日：2005-05-27

申请人： LAM RESEARCH CORPORATION

发明人： YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

IPC分类号： H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.