公开(公告)号：EP3479502A1

公开(公告)日：2019-05-08

申请号：EP17738020.1

申请日：2017-06-30

申请人： Luxtera, Inc.

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg

IPC分类号： H04B10/50 ,  G02F1/225 ,  G02F1/21 ,  H04B10/032

公开(公告)号：EP3267606B1

公开(公告)日：2019-11-27

申请号：EP17180287.9

申请日：2017-07-07

申请人： Luxtera Inc.

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg

IPC分类号： H04J14/02 ,  G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  H04B10/2581 ,  G02B6/40 ,  H04J14/04 ,  H04B10/80 ,  H04L29/06 ,  H04B10/40 ,  H04B10/43

公开(公告)号：EP2326988B1

公开(公告)日：2018-11-07

申请号：EP09812368.0

申请日：2009-09-08

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  DE DOBBELAERE, Peter ,  ABDALLA, Sherif ,  KUCHARSKI, Daniel ,  MASINI, Gianlorenzo ,  YOKOYAMA, Kosei ,  GUCKENBERGER, John ,  MEKIS, Attila

IPC分类号： G02F3/00 ,  H04L27/144 ,  H01L21/84 ,  H01L27/12

CPC分类号： H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

摘要： Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

公开(公告)号：EP3029861A1

公开(公告)日：2016-06-08

申请号：EP16152245.3

申请日：2013-03-18

申请人： Luxtera, Inc.

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg ,  PETERSON, Mark

IPC分类号： H04B10/80

CPC分类号： H04B10/801

摘要： Methods and systems for a photonic interposer are disclosed and may include receiving one or more continuous wave (CW) optical signals in a silicon photonic interposer from an external optical source, either from an optical source assembly or from optical fibers coupled to the silicon photonic interposer. The received CW optical signals may be processed based on electrical signals received from the electronics die. The modulated optical signals may be received in the silicon photonic interposer from optical fibers coupled to the silicon photonic interposer. Electrical signals may be generated in the silicon photonic interposer based on the received modulated optical signals, and may then be communicated to the electronics die via copper pillars. Optical signals may be communicated into and/or out of the silicon photonic interposer utilizing grating couplers. The electronics die may comprise one or more of: a processor core, a switch core, or router.

摘要翻译： 公开了用于光插入器的方法和系统，并且可以包括从光源组件或耦合到硅光子插入器的光纤从外部光源接收硅光插入器中的一个或多个连续波（CW）光信号 。 可以基于从电子管芯接收的电信号来处理所接收的CW光信号。 调制的光信号可以从耦合到硅光子插入器的光纤在硅光插入器中接收。 可以基于所接收的调制光信号在硅光子插入器中产生电信号，然后可以经由铜支柱将电信号传送到电子管芯。 光信号可以使用光栅耦合器传送到硅光插入器中和/或从硅光插入器中传出。 电子管芯可以包括以下一个或多个：处理器核心，交换机核心或路由器。

公开(公告)号：EP2201417B1

公开(公告)日：2020-12-02

申请号：EP08837593.6

申请日：2008-10-01

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  ABDALLA, Sherif ,  MIRSAIDI, Sina ,  DE DOBBELAERE, Peter

IPC分类号： H04B10/40 ,  G02B6/42

公开(公告)号：EP3340495A1

公开(公告)日：2018-06-27

申请号：EP18154491.7

申请日：2013-03-18

申请人： Luxtera, Inc.

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg ,  PETERSON, Mark

IPC分类号： H04B10/80

CPC分类号： H04B10/801

摘要： Methods and systems for a photonic interposer are disclosed and may include receiving one or more continuous wave (CW) optical signals in a silicon photonic interposer from an external optical source, either from an optical source assembly or from optical fibers coupled to the silicon photonic interposer. The received CW optical signals may be processed based on electrical signals received from the electronics die. The modulated optical signals may be received in the silicon photonic interposer from optical fibers coupled to the silicon photonic interposer. Electrical signals may be generated in the silicon photonic interposer based on the received modulated optical signals, and may then be communicated to the electronics die via copper pillars. Optical signals may be communicated into and/or out of the silicon photonic interposer utilizing grating couplers. The electronics die may comprise one or more of: a processor core, a switch core, or router.

公开(公告)号：EP3534209A1

公开(公告)日：2019-09-04

申请号：EP18204690.4

申请日：2009-09-08

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  DE DOBBELAERE, Peter ,  ABDALLA, Sherif ,  KUCHARSKI, Daniel ,  MASINI, Gianlorenzo ,  YOKOYAMA, Kosei ,  GUCKENBERGER, John ,  MEKIS, Attila

IPC分类号： G02F3/00 ,  H04L27/144 ,  H01L21/84 ,  H01L27/12 ,  H01L25/065 ,  H01L25/16 ,  H04B10/40

摘要： Monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-msulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

公开(公告)号：EP3267606A1

公开(公告)日：2018-01-10

申请号：EP17180287.9

申请日：2017-07-07

申请人： Luxtera, Inc.

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg

IPC分类号： H04J14/02 ,  G02B6/12

摘要： Methods and systems for selectable parallel optical fiber and WDM operation may include an optoelectronic transceiver integrated in a silicon photonics die. The optoelectronic transceiver may, in a first communication mode, communicate continuous wave (CW) optical signals from an optical source module to a first subset of optical couplers on the die for processing signals in optical modulators in accordance with a first communications protocol, and in a second communication mode, communicate the CW optical signals to a second subset of optical couplers for processing signals in the optical modulators in accordance with a second communications protocol. Processed signals may be transmitted out of the die utilizing a third subset of the optical couplers. First or second protocol optical signals may be received from the fiber interface coupled to a fourth subset or a fifth subset, respectively, of the optical couplers.

摘要翻译： 用于可选择的并行光纤和WDM操作的方法和系统可以包括集成在硅光子管芯中的光电子收发器。 光电收发器可以在第一通信模式下将来自光源模块的连续波（CW）光信号传送到管芯上的光耦合器的第一子集，以根据第一通信协议处理光调制器中的信号，并且在 第二通信模式，将CW光信号传送到光耦合器的第二子集，以根据第二通信协议处理光调制器中的信号。 处理的信号可以利用光耦合器的第三子集从芯片中传输出来。 可以分别从耦合到光耦合器的第四子集或第五子集的光纤接口接收第一或第二协议光信号。

公开(公告)号：EP2326988A1

公开(公告)日：2011-06-01

申请号：EP09812368.0

申请日：2009-09-08

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  DE DOBBELAERE, Peter ,  ABDALLA, Sherif ,  KUCHARSKI, Daniel ,  MASINI, Gianlorenzo ,  YOKOYAMA, Kosei ,  GUCKENBERGER, John ,  MEKIS, Attila

IPC分类号： G02F3/00 ,  H04L27/144

CPC分类号： H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

摘要： Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

公开(公告)号：EP2201417A1

公开(公告)日：2010-06-30

申请号：EP08837593.6

申请日：2008-10-01

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  ABDALLA, Sherif ,  MIRSAIDI, Sina ,  DE DOBBELAERE, Peter

IPC分类号： G02B6/26

CPC分类号： G02B6/124 ,  G02B6/30 ,  G02B6/4209 ,  G02B6/4214

摘要： Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.