公开(公告)号：EP0683519A2

公开(公告)日：1995-11-22

申请号：EP95106787.5

申请日：1995-05-05

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Nakatsuka, Tadayoshi ,  Itoh, Junji ,  Yamamoto, Shinji ,  Nishitsuji, Mitsuru

IPC分类号： H01L23/64 ,  H01L25/16

CPC分类号： H03F3/195 ,  H01L23/645 ,  H01L23/647 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/165 ,  H05K3/403

摘要： On a ceramic substrate (122), spiral-type inductors (102 to 107) of a single layer wiring of a metal thin film are provided and respectively connected to a wiring pattern formed on another face of the substrate via through holes (114 to 119). A semiconductor chip (101) is flip-chip mounted on the substrate in a face-down manner. On the face of the semiconductor chip, capacitors composed of a highly dielectric material, resistors formed by an ion implantation method or a thin-film forming method, and FETs are provided, respectively. Interconnection between the substrate and an external circuit board is achieved employing terminals formed at end faces of the substrate. The terminals (108 to 113) have a concave shape with respect to the end face of the substrate. Thus, there is no need to use a package, and miniaturization and reduction in cost of a high-performance hybrid IC (100) is achieved.

摘要翻译： 在陶瓷基板上，设置金属薄膜的单层布线的螺旋型电感器，并分别通过通孔与形成在基板的另一面上的布线图案相连。 半导体芯片以面朝下的方式倒装安装在基板上。 在半导体芯片的表面上，分别提供由高电介质材料构成的电容器，通过离子注入法形成的电阻或薄膜形成方法以及FET。 使用在基板的端面形成的端子来实现基板与外部电路基板之间的互连。 端子相对于基板的端面具有凹形。 因此，不需要使用封装，并且实现了高性能混合IC的小型化和降低成本。