公开(公告)号：EP1964159A4

公开(公告)日：2017-09-27

申请号：EP06774375

申请日：2006-06-30

申请人： DE ROCHEMONT L PIERRE

发明人： DE ROCHEMONT L PIERRE

IPC分类号： H01L21/00

CPC分类号： H01Q9/0414 ,  B82Y30/00 ,  C04B2235/768 ,  C04B2235/781 ,  H01C7/003 ,  H01C17/003 ,  H01C17/06533 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/33 ,  H01L23/49822 ,  H01L23/642 ,  H01L23/647 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/38 ,  H01Q15/0086 ,  H05K1/0298 ,  H05K1/092 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/207 ,  H05K2201/017 ,  H05K2201/0175 ,  H05K2201/09763 ,  H05K2203/016 ,  H05K2203/0338 ,  H05K2203/121 ,  Y10T428/12493

摘要： An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.

摘要翻译： 电气部件提供位于介电基底之上或之内的陶瓷元件，介电基底之间并与一对电导体接触，其中陶瓷元件包括一种或多种金属氧化物，其具有小于或等于1.5摩尔的金属氧化物组成均匀性的波动 整个陶瓷元件的％。 一种制造电部件的方法，在衬底上的一对电导体之间提供或形成陶瓷元件，所述陶瓷元件包括沉积金属有机前体的混合物并引起金属氧化物前体的同时分解以形成陶瓷元件，所述陶瓷元件包括一个 或更多的金属氧化物。

公开(公告)号：EP3185295A1

公开(公告)日：2017-06-28

申请号：EP16186549.8

申请日：2016-08-31

申请人： GPOWER SEMICONDUCTOR, INC.

发明人： ZHAO, Shufeng

IPC分类号： H01L27/088 ,  H01L25/065 ,  H03K17/567 ,  H01L25/16 ,  H01L29/78 ,  H01L23/495

CPC分类号： H01L23/552 ,  H01L23/057 ,  H01L23/3735 ,  H01L23/49562 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/16 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7805 ,  H01L2224/04042 ,  H01L2224/32225 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48265 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2924/00014 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/3025 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

摘要： A semiconductor package structure (300) comprises: a high-voltage depletion type semiconductor transistor (304) comprising a source electrode (306), a gate electrode (307) and a drain electrode (305); a low-voltage enhancement type semiconductor transistor (320) comprising a source electrode (308), a gate electrode (310) and a drain electrode (309); a shell (301) comprising a cavity (301-1), a high-voltage terminal (303), a first low-voltage terminal (330) and a second low-voltage terminal (331); and cascade circuits comprising a supporting sheet (302) having a conductive surface (302-1). The source electrode (306) of the high-voltage depletion type transistor (304) and the drain electrode (309) of the low-voltage enhancement type semiconductor transistor (320) are fixed to the conductive surface (302-1) of the supporting sheet (302) and electrically connected to each other. A side of the supporting sheet (302) away from the conductive surface (302-1) is fixed to the cavity (301-1) of the shell (301).

摘要翻译： 一种半导体封装结构（300），包括：包括源极（306），栅极（307）和漏极（305）的高压耗尽型半导体晶体管（304）; 包括源电极（308），栅电极（310）和漏电极（309）的低电压增强型半导体晶体管（320）; 包括腔体（301-1），高压端子（303），第一低压端子（330）和第二低压端子（331）的外壳（301）; 以及包括具有导电表面（302-1）的支撑片（302）的级联电路。 高压耗尽型晶体管（304）的源电极（306）和低电压增强型半导体晶体管（320）的漏电极（309）被固定到支持体的导电表面（302-1） 片材（302）并且彼此电连接。 远离导电表面（302-1）的支撑片（302）的一侧被固定到壳体（301）的空腔（301-1）。

公开(公告)号：EP3163616A1

公开(公告)日：2017-05-03

申请号：EP16192005

申请日：2016-10-03

申请人： MEDIATEK INC

发明人： LIAO CHUN-NENG ,  CHIANG MENG-HSIN ,  CHANG CHUN-WEI ,  UNG CHEE-KONG ,  LI CHING-CHIH

IPC分类号： H01L25/16 ,  H01L23/64 ,  H03H7/06

CPC分类号： H03K5/1252 ,  H01L23/642 ,  H01L23/647 ,  H01L25/16 ,  H01L25/165 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105

摘要： A semiconductor integrated circuit device includes a chip main circuit and a damper. The chip main circuit is coupled to a power source and performs a predetermined function. The damper is coupled to an output terminal of the chip main circuit. The damper is coupled between the chip main circuit and a passive component for suppressing anti-resonance of the semiconductor integrated circuit device.

摘要翻译： 一种半导体集成电路器件包括芯片主电路和阻尼器。 芯片主电路连接到电源并执行预定功能。 阻尼器连接到芯片主电路的输出端。 阻尼器耦合在芯片主电路和无源部件之间，用于抑制半导体集成电路器件的反谐振。

公开(公告)号：EP2741322B1

公开(公告)日：2016-04-27

申请号：EP12196321.9

申请日：2012-12-10

申请人： ams AG

发明人： Schrank, Franz ,  Schrems, Martin

IPC分类号： H01L23/34 ,  G01N27/14 ,  G01N33/00

CPC分类号： H01L23/528 ,  G01N27/128 ,  G01N27/14 ,  G01N33/0004 ,  G01N33/0016 ,  H01L21/76898 ,  H01L23/345 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/647 ,  H01L27/0629 ,  H01L31/024 ,  H01L2223/6672 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2058861A4

公开(公告)日：2011-10-12

申请号：EP07805967

申请日：2007-08-22

申请人： DAIKIN IND LTD

发明人： SEKIMOTO MORIMITSU ,  HAGA HITOSHI ,  SAKAKIBARA KENICHI ,  KAWASHIMA REIJI ,  MECHI ABDALLAH ,  MAEDA TOSHIYUKI

IPC分类号： H01L25/07 ,  H01L23/64 ,  H01L25/16 ,  H05K1/02

CPC分类号： H01L25/16 ,  H01L23/647 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/4899 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H05K1/0201 ,  H05K1/0204 ,  H05K1/141 ,  H05K1/18 ,  H05K2201/062 ,  H05K2201/09263 ,  H05K2201/09972 ,  H05K2201/10022 ,  H05K2201/10166 ,  H05K2203/081 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： In the case where a chip is made of wide band gap semiconductor, a power conversion apparatus is obtained in which a component having a low heat resistant temperature is prevented from receiving thermal damage by heat generated at the chip. In a configuration including: a chip portion (20) including a chip (21) made of wide band gap semiconductor and a member (22, 23) having a heat resistant temperature equal to or higher than that of the chip (21); and a peripheral component (25) arranged in the vicinity of the chip portion (20) and having a heat resistant temperature lower than that of the chip (21). The chip (21) and the peripheral component (25) are thermally insulated from each other so that the temperature of the peripheral component (25) does not exceed the heat resistant temperature of the peripheral component (25).

公开(公告)号：EP2287890A2

公开(公告)日：2011-02-23

申请号：EP10012703.4

申请日：2001-08-27

申请人： Megica Corporation

发明人： Lin, Mou-Shiung

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/60 ,  H01L27/08

CPC分类号： H01L28/10 ,  H01L21/768 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/5286 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/60 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/03 ,  H01L24/05 ,  H01L27/0676 ,  H01L27/08 ,  H01L28/20 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15174 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S257/92 ,  H01L2924/00

摘要： An integrated circuit chip comprising:
- a silicon substrate;
- a first dielectric layer over said silicon substrate;
- a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, wherein said metallization structure comprises electroplated gold;
- a second dielectric layer between said first and second metal layers;
- a separating layer over said metallization structure and over said first and second dielectric layers, wherein said separating layer comprises a nitride layer; and
- a third metal layer over said separating layer, wherein said third metal layer comprises at least a portion, vertically over said separating layer, of an inductor, wherein said third metal layer comprises electroplated gold.

摘要翻译： 一种集成电路芯片，包括： - 硅衬底; - 在所述硅衬底上的第一介电层; - 在所述第一介电层上的金属化结构，其中所述金属化结构包括第一金属层和在所述第一金属层上的第二金属层，其中所述金属化结构包括电镀的金; - 在所述第一和第二金属层之间的第二介电层; - 在所述金属化结构上以及所述第一和第二介电层上的分离层，其中所述分离层包括氮化物层; 以及在所述分离层上的第三金属层，其中所述第三金属层包括垂直于所述分离层之上的电感器的至少一部分，其中所述第三金属层包含电镀金。

公开(公告)号：EP2242101A2

公开(公告)日：2010-10-20

申请号：EP10160034.4

申请日：2010-04-15

申请人： Oracle America, Inc.

发明人： Drost, Robert J. ,  Hopkins, Robert D. ,  Chow, Alex

IPC分类号： H01L23/60 ,  H01L23/64 ,  H01L23/66 ,  H01L25/065 ,  H01L21/60 ,  H01L23/00

CPC分类号： H01L23/66 ,  H01L23/3171 ,  H01L23/48 ,  H01L23/5223 ,  H01L23/5225 ,  H01L23/552 ,  H01L23/585 ,  H01L23/60 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/72 ,  H01L24/90 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0251 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2223/6655 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/95145 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/19033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H03H7/38 ,  H01L2924/00

摘要： Embodiments of a circuit for use with an inter-chip connection that has a variable complex impedance (which can be conductive, capacitive or both), a system that includes the circuit, and a communication technique are described. This inter-chip connection may be formed between a microspring or an anisotropic film and a metal connector on or proximate to a surface of a chip. Moreover, the circuit may mitigate signal distortion associated with the variable complex impedance. For example, the circuit may include an internal impedance that is electrically coupled in series with the metal connector, and that has an impedance which dominates the variable complex impedance over a range of operating frequencies. Separately or additionally, the circuit may be adapted to correct for the signal distortion.

公开(公告)号：EP1979944A1

公开(公告)日：2008-10-15

申请号：EP07701695.4

申请日：2007-01-17

申请人： Cadeka Microcircuits, LLC

发明人： LACOURSE, Alain ,  DUCHARME, Mathieu ,  ST-JEAN, Hugo ,  GAGNON, Yves ,  SAVARIA, Yvon ,  MEUNIER, Michel

IPC分类号： H01L23/64 ,  H01L21/467

CPC分类号： H01L23/647 ,  H01L21/02697 ,  H01L27/08 ,  H01L29/0646 ,  H01L29/0692 ,  H01L29/8605 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

公开(公告)号：EP1444731A1

公开(公告)日：2004-08-11

申请号：EP02780619.9

申请日：2002-11-12

申请人： Skyworks Solutions, Inc.

发明人： CHUNGPAIBONNPATANA, Surasit ,  HASHEMI, Hassan, S. ,  FAZELPOUR, Siamak

IPC分类号： H01L23/48

CPC分类号： H01L23/647 ,  H01L23/3114 ,  H01L23/525 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2924/01079 ,  H01L2924/3011

摘要： In one embodiment, the invention includes first (104) and second (118) transmission lines fabricated in a redistribution layer over a semiconductor die (100). The first transmission line (104) has a first distance from a first ground return path formed in a first metal level. The first transmission line (104) has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line (104) is affected by the distance between the first transmission line (104) and the first ground return path. Similar to the first transmission line (104) , the second transmission line (118) has a second distance from a second ground return path formed in a second metal level. The second transmission line (118) has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line (118) is affected by the distance between the second transmission line (118) and the second ground return path.

公开(公告)号：EP0981160A2

公开(公告)日：2000-02-23

申请号：EP99115541.7

申请日：1999-08-02

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Buck, Martin

IPC分类号： H01L23/495 ,  H01L23/64

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/647 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/45099 ,  H01L2924/00

摘要： An den Zuleitungen (Z) eines integrierten Halbleiterchips, die eine Verbindung zu externen Anschlüssen einer Versorgungsspannung herstellen, können durch hoch getaktete Stromimpulse Potentialschwankungen bis hin zu Resonanzschwingungen an einem internen Anschluß der jeweiligen Zuleitung (Z) angeregt werden. Zur Dämpfung dieser Potentialschwankungen wird für eine oder mehrere Zuleitungen (Z) ein Widerstandswert (R D ) vorgegeben, der groß genug ist, diese Potentialschwankungen zu dämpfen, jedoch klein genug ist, um auf der jeweiligen Zuleitung (Z) nur einen vorgegebenen maximal zulässigen Spannungsabfall zu verursachen. Der jeweilige Widerstand (R D ) kann durch Verwendung eines Materials mit einem entsprechenden spezifischen Widerstand oder durch Verkleinerung des Leiterquerschnitts (q) mit einer Einkerbung (K) entlang der Zuleitung (Z) erzielt werden.

摘要翻译： 一种集成的半导体芯片的电源线（Z），提供到电源电压的外部端子的连接，可以通过高时钟电流脉冲电位变动来激发在相应的进料管线（Z）的内部端子共振振荡。 受潮这些电位变化，电阻值（RD）为一个或多个引线（Z），其足够大以抑制这些电位变化，但足够小以相应的进料管线（Z）中，只有预定的最大可允许的压降，以指定 引起。 相应的电阻（RD）可通过使用材料与合适的电阻率或通过还原导体横截面（Q）沿进料管线（Z）的凹口（K）来实现。