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1.发明公开Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219A3
公开(公告)日：2004-06-16
申请号：EP01128160.7
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
Inventor： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC: B81B3/00
CPC classification number: B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
Abstract: The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
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Patent Agency Ranking2.发明公开Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219A2
公开(公告)日：2002-06-05
申请号：EP01128160.7
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
Inventor： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC: B81B3/00
CPC classification number: B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
Abstract: The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
Abstract translation: 本发明提供了通过包括限定在通过从基材层绝缘层上分离的单晶硅层的结构的方法制造的微机械或微光机械结构; 选择性地蚀刻所述单晶硅层; 沉积和绝缘体层上蚀刻的多晶硅层，用剩余的多晶硅形成该结构的机械元件; 金属化结构的背面; 和释放所形成的结构。
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3.发明授权Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权一种用于制备具有背侧金属化的微机械和microoptomechanical结构过程
公开(公告)号：EP1211219B1
公开(公告)日：2007-05-16
申请号：EP01128160.7
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , Xerox Corporation
Inventor： Scharf, Bruce R. , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T. , Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang
IPC: B81B3/00
CPC classification number: B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
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4.发明公开Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构，包括硅单晶的曝光的步骤的过程
公开(公告)号：EP1213259A3
公开(公告)日：2004-06-16
申请号：EP01128161.5
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
Inventor： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC: B81B3/00
CPC classification number: B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
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5.发明授权Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构暴露单晶硅过程
公开(公告)号：EP1213259B1
公开(公告)日：2007-05-23
申请号：EP01128161.5
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , Xerox Corporation
Inventor： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC: B81B3/00
CPC classification number: B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
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6.发明公开Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构暴露单晶硅过程
公开(公告)号：EP1213259A2
公开(公告)日：2002-06-12
申请号：EP01128161.5
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
Inventor： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC: B81B3/00
CPC classification number: B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
Abstract translation: 本发明提供了一种微机械或微光学机械结构。 该结构是由一种方法，包括限定通过从层基底绝缘层上分离的单晶硅层上的结构所产生; 沉积和在单晶硅层上蚀刻多晶硅层，与其余polysilcon形成该结构的机械或光学元件; 露出单晶硅层的选定区域; 和释放所形成的结构。
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