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公开(公告)号:EP0846338A1
公开(公告)日:1998-06-10
申请号:EP96923800.0
申请日:1996-07-24
申请人: MITEL CORPORATION
IPC分类号: H01L21
CPC分类号: H01L24/81 , H01L2224/45124 , H01L2224/45144 , H01L2224/81801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01033 , H01L2924/01057 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15787 , H01L2924/00 , H01L2224/48
摘要: A method of making electrical connections to an integrated circuit chip (1, 2, 3) comprises providing at least one chip having exposed conductors on its active surface, providing a substrate (4) having conductors (5) on its surface corresponding to said exposed conductors on the chip, mounting the chip on the substrate so that said conductors are in accurate alignment with the corresponding conductors on the substrate, bonding the chip to said substrate, and filling any voids between the conductors on the chip and the corresponding conductors on said substrate with a conductive material. This method removes the limitation imposed by the large pad size needed for conventional techniques.
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公开(公告)号:EP0708939B1
公开(公告)日:1997-06-04
申请号:EP94921556.0
申请日:1994-07-13
申请人: MITEL CORPORATION
IPC分类号: G05F3/24
CPC分类号: H03K17/145 , H03K19/00369 , H03K19/00384
摘要: A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.
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公开(公告)号:EP0708939A1
公开(公告)日:1996-05-01
申请号:EP94921556.0
申请日:1994-07-13
申请人: MITEL CORPORATION
CPC分类号: H03K17/145 , H03K19/00369 , H03K19/00384
摘要: A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.
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