公开(公告)号：EP0798401A2

公开(公告)日：1997-10-01

申请号：EP97300930.1

申请日：1997-02-13

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Gotoh, Yumi ,  Miyashita, Takehiro ,  Okamura, Tomoyuki ,  Yamazaki, Fumiharu ,  Fukuda, Shin ,  Fukuda, Nobuhiro ,  Tajiri, Yoko ,  Kawasaki, Noboru

IPC分类号： C23C14/20 ,  C23C14/58 ,  C23C16/40 ,  B23B27/00 ,  B65D65/42

CPC分类号： C23C14/5826 ,  B32B15/08 ,  B32B27/06 ,  C23C14/205 ,  C23C14/5853 ,  C23C16/402 ,  H05K3/38 ,  Y10T428/31667

摘要： A laminate using a polymeric molded article as a substrate and having a light transparency, gas barrier properties and an excellent alkali resistance is obtainable by carrying out a surface treatment to deposit an oxide of at least one metal selected from the metal elements of groups 2, 8, 9, 10 and 11 of the periodic table, and then forming a gas barrier layer such as oxides of silicon, nitrides of silicon and carbides of silicon on the treated surface. The gas barrier layer is not peeled off from the polymeric molded article even after immersion in an alkali solution of pH 12 or more. The amount of the metal on the treated surface is preferably in the range of 5 x 10 14 atoms/cm 2 to 3 x 10 16 atoms/cm 2 in terms of the metal atoms per unit area. The practical performance of the laminate is not deteriorated during the patterning, by alkali etching, of a transparent conductive layer formed on the laminate.

公开(公告)号：EP0729190A3

公开(公告)日：1997-05-21

申请号：EP96301217.4

申请日：1996-02-23

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Saitoh, Kimihiko ,  Ishiguro, Nobuyuki ,  Sadamoto, Mitsuru ,  Fukuda, Shin ,  Ashida, Yoshinori ,  Fukuda, Nobuhiro

IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.

摘要翻译： 适合用作非晶硅太阳能电池等中的本征半导体层的薄微晶硅半导体膜包括非晶相，其中包含微晶，其形式为棱柱或圆锥形微晶聚集体相。 另外的微晶可以作为单独的微晶分散在非晶相中。 在薄膜中，结晶部分可以优选在5至80％的范围内，微晶尺寸可以优选在2至1,000nm的范围内。 该薄膜可以如下形成：首先在基板上以0.01nm / sec至0.1nm / sec的沉积速率将初始膜形成至2nm至100nm范围内的厚度，然后形成主膜 例如，根据RF等离子体CVD，沉积速率为0.1nm / sec至2nm / sec。

公开(公告)号：EP0745872A3

公开(公告)日：1997-10-15

申请号：EP96303894.8

申请日：1996-05-30

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Kawamoto, Satoshi ,  Fukuda, Shin ,  Gotoh, Yumi ,  Fukuda, Nobuhiro

IPC分类号： G02B1/10

CPC分类号： G02B5/0866

摘要： A reflecting film in its simplest form has at least a transparent polymer film (10) and a thin silver layer (30) applied on the transparent polymer film to reflect light entered from incident on and transmitted through the transparent polymer film. The reflecting film has a reflectance of at least 90% to visible light even after exposure for 300 hours at a reflecting film temperature of 100°C and an exposure intensity of 500 mW/cm 2 to artificial sunlight from which light of 390 nm and shorter in wavelength has been eliminated. In fabricating the reflecting film, a surface (20) of the transparent polymer film (10) is preferably treated with a metal-containing plasma, and then the thin-silver layer (30) is deposited on the treated surface.

公开(公告)号：EP0745872A2

公开(公告)日：1996-12-04

申请号：EP96303894.8

申请日：1996-05-30

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Kawamoto, Satoshi ,  Fukuda, Shin ,  Gotoh, Yumi ,  Fukuda, Nobuhiro

IPC分类号： G02B1/10

CPC分类号： G02B5/0866

摘要： A reflecting film in its simplest form has at least a transparent polymer film (10) and a thin silver layer (30) applied on the transparent polymer film to reflect light entered from incident on and transmitted through the transparent polymer film. The reflecting film has a reflectance of at least 90% to visible light even after exposure for 300 hours at a reflecting film temperature of 100°C and an exposure intensity of 500 mW/cm 2 to artificial sunlight from which light of 390 nm and shorter in wavelength has been eliminated. In fabricating the reflecting film, a surface (20) of the transparent polymer film (10) is preferably treated with a metal-containing plasma, and then the thin-silver layer (30) is deposited on the treated surface.

摘要翻译： 其最简单形式的反射膜至少具有透明聚合物膜（10）和薄银层（30），该薄层银涂覆在透明聚合物膜上以反射从入射并透过透明聚合物膜而进入的光。 即使在反射膜温度为100℃，曝光强度为500mW / cm 2的曝光强度下，即使在390nm的光的人造太阳光下，反射膜也具有至少90％的可见光的反射率 波长较短已被消除。 在制造反射膜时，优选用含金属的等离子体处理透明聚合物膜（10）的表面（20），然后将薄银层（30）沉积在处理过的表面上。

公开(公告)号：EP0798401A3

公开(公告)日：1999-12-22

申请号：EP97300930.1

申请日：1997-02-13

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Gotoh, Yumi ,  Miyashita, Takehiro ,  Okamura, Tomoyuki ,  Yamazaki, Fumiharu ,  Fukuda, Shin ,  Fukuda, Nobuhiro ,  Tajiri, Yoko ,  Kawasaki, Noboru

IPC分类号： C23C14/20 ,  C23C14/58 ,  C23C16/40 ,  B23B27/00 ,  B65D65/42

CPC分类号： C23C14/5826 ,  B32B15/08 ,  B32B27/06 ,  C23C14/205 ,  C23C14/5853 ,  C23C16/402 ,  H05K3/38 ,  Y10T428/31667

摘要： A laminate using a polymeric molded article as a substrate and having a light transparency, gas barrier properties and an excellent alkali resistance is obtainable by carrying out a surface treatment to deposit an oxide of at least one metal selected from the metal elements of groups 2, 8, 9, 10 and 11 of the periodic table, and then forming a gas barrier layer such as oxides of silicon, nitrides of silicon and carbides of silicon on the treated surface. The gas barrier layer is not peeled off from the polymeric molded article even after immersion in an alkali solution of pH 12 or more. The amount of the metal on the treated surface is preferably in the range of 5 x 10 14 atoms/cm 2 to 3 x 10 16 atoms/cm 2 in terms of the metal atoms per unit area. The practical performance of the laminate is not deteriorated during the patterning, by alkali etching, of a transparent conductive layer formed on the laminate.

摘要翻译： 通过进行表面处理以沉积选自第2族金属元素中的至少一种金属的氧化物，可获得使用聚合物模塑制品作为基材并具有透光性，气体阻隔性和优异耐碱性的层压体， 8,9,10和11，然后在处理过的表面上形成气体阻挡层，例如硅的氧化物，硅的氮化物和硅的碳化物。 即使浸渍在pH值为12以上的碱性溶液中，气体阻隔层也不会从聚合物成型体剥离。 按照每单位面积的金属原子计算，处理过的表面上的金属量优选为5×10 14原子/ cm 2至3×10 16原子/ cm 2。 在通过碱蚀刻对层压体上形成的透明导电层进行构图期间，层压体的实际性能不会劣化。

公开(公告)号：EP0729190A2

公开(公告)日：1996-08-28

申请号：EP96301217.4

申请日：1996-02-23

申请人： MITSUI TOATSU CHEMICALS, INCORPORATED

发明人： Saitoh, Kimihiko ,  Ishiguro, Nobuyuki ,  Sadamoto, Mitsuru ,  Fukuda, Shin ,  Ashida, Yoshinori ,  Fukuda, Nobuhiro

IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.

摘要翻译： 适合用作非晶硅太阳能电池等中的本征半导体层的薄微晶硅半导体膜包括其中包含棱柱形或锥形微晶聚集相形式的微晶的非晶相。 另外的微晶可以作为单晶体在非晶相中分散。 在薄膜中，结晶部分优选为5〜80％，微晶尺寸优选为2〜1000nm。 该薄膜可以通过首先在基板上以0.01nm / sec至0.1nm / sec的沉积速率首先在2nm至100nm的范围内形成初始膜，然后形成主膜 例如，根据RF等离子体CVD，沉积速率为0.1nm / sec至2nm / sec。