摘要:
This invention relates to a process for obtaining a high purity nitrogen trifluoride gas which is used as a dry etching agent for semiconductors or a cleaning gas for CVD apparatus, etc., particularly to a process for removing oxygen difluoride. This is a process for purifying a nitrogen trifluoride gas by, after removing hydrogen fluoride from a nitrogen trifluoride crude gas, contacting with at least one aqueous solution containing one selected from the group consisting of sodium thiosulfate, hydrogen iodide and sodium sulfide.
摘要:
A method of treating an exhaust gas comprises the steps of loading into a column an exhaust gas treating agent containing as a main component a metal a surface of which is fluorinated previously; passing through the column the exhaust gas containing nitrogen trifluoride as a component to be treated; and contacting the exhaust gas with the exhaust gas treating agent.
摘要:
A process of the present invention can effectively decompose, particularly, dinitrogen difluoride present in a nitrogen trifluoride gas to remove it from the gas. This process for purifying the nitrogen trifluoride gas is characterized by comprising the step of heating the nitrogen trifluoride gas containing at least dinitrogen difluoride as an impurity at a tenperature of 150 to 600°C in a metallic vessel the inner wall of which is lined with a solid fluoride, or in a packing layer of the solid fluoride in the vessel.
摘要:
A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH n F 4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is anhydrous zinc fluoride having at least 500 Å in terms of the size of crystallites of the (110) plane.
摘要:
This invention relates to a process for obtaining a high purity nitrogen trifluoride gas which is used as a dry etching agent for semiconductors or a cleaning gas for CVD apparatus, etc., particularly to a process for removing oxygen difluoride. This is a process for purifying a nitrogen trifluoride gas by, after removing hydrogen fluoride from a nitrogen trifluoride crude gas, contacting with at least one aqueous solution containing one selected from the group consisting of sodium thiosulfate, hydrogen iodide and sodium sulfide.
摘要:
A process of the present invention can effectively decompose, particularly, dinitrogen difluoride present in a nitrogen trifluoride gas to remove it from the gas. This process for purifying the nitrogen trifluoride gas is characterized by comprising the step of heating the nitrogen trifluoride gas containing at least dinitrogen difluoride as an impurity at a tenperature of 150 to 600°C in a metallic vessel the inner wall of which is lined with a solid fluoride, or in a packing layer of the solid fluoride in the vessel.