摘要:
A low inductance semiconductor package (33) for housing at least two semiconductor die comprising a heat sink (11), an insulative material (13), a plurality of package leads (22), a frame (19), a cap (21), and an encapsulation material (23). At least three parallel metal stripes (26-29) are patterned on a surface (15) of the insulative material (13) providing interconnect for the at least two semiconductor die. Each of the plurality of package leads (22) directly connect to a corresponding metal stripe of the at least three metal stripes (26-29) minimizing parasitic inductance.
摘要:
A liquid cooled power dissipation apparatus (10) includes a metal matrix composite heat sink (11) with an insulation layer (17) integral to the apparatus (10). The insulation layer (17) is made integral to the apparatus (11) during infiltration of the metal matrix composite heat sink (11). Electronic components 23 are situated on top of the insulation layer (17).
摘要:
A power transistor (11) having a control electrode (16), a first electrode (17), a second electrode (18), and a kelvin electrode (19) is provided. The power transistor (11) comprises a plurality of transistors (12-15) coupled in parallel. Each transistor having a control electrode, a first electrode, and a second electrode coupled respectively to the control electrode (16), first electrode (17), and second electrode (18) of the power transistor (11). A plurality of first resistors (26-29) reduce oscillation and ringing, each first resistor is coupled between the kelvin electrode (19) and a second electrode of a transistor of the plurality of transistors (12-15). A plurality of second resistors (21-24) also reduces oscillation and ringing, each second resistor is coupled between the control electrode (16) and a control electrode of a transistor of the plurality of transistors (12-15).
摘要:
A power transistor (11) having a control electrode (16), a first electrode (17), a second electrode (18), and a kelvin electrode (19) is provided. The power transistor (11) comprises a plurality of transistors (12-15) coupled in parallel. Each transistor having a control electrode, a first electrode, and a second electrode coupled respectively to the control electrode (16), first electrode (17), and second electrode (18) of the power transistor (11). A plurality of first resistors (26-29) reduce oscillation and ringing, each first resistor is coupled between the kelvin electrode (19) and a second electrode of a transistor of the plurality of transistors (12-15). A plurality of second resistors (21-24) also reduces oscillation and ringing, each second resistor is coupled between the control electrode (16) and a control electrode of a transistor of the plurality of transistors (12-15).