Low inductance semiconductor package
    1.
    发明公开
    Low inductance semiconductor package 失效
    Halbleiterpackung von niedriger Induktanz。

    公开(公告)号:EP0609528A1

    公开(公告)日:1994-08-10

    申请号:EP93120273.3

    申请日:1993-12-16

    申请人: MOTOROLA, INC.

    摘要: A low inductance semiconductor package (33) for housing at least two semiconductor die comprising a heat sink (11), an insulative material (13), a plurality of package leads (22), a frame (19), a cap (21), and an encapsulation material (23). At least three parallel metal stripes (26-29) are patterned on a surface (15) of the insulative material (13) providing interconnect for the at least two semiconductor die. Each of the plurality of package leads (22) directly connect to a corresponding metal stripe of the at least three metal stripes (26-29) minimizing parasitic inductance.

    摘要翻译: 一种用于容纳至少两个半导体管芯的低电感半导体封装(33),包括散热器(11),绝缘材料(13),多个封装引线(22),框架(19),盖子(21) ,和封装材料(23)。 至少三个平行的金属条纹(26-29)被图案化在绝缘材料(13)的表面(15)上,为至少两个半导体管芯提供互连。 所述多个封装引线(22)中的每一个直接连接至少三个金属条(26-29)中相应的金属条,使寄生电感最小化。

    Power dissipation apparatus and method for making
    2.
    发明公开
    Power dissipation apparatus and method for making 失效
    Wärmeabfuhrgerätund dessen Herstellungsverfahren。

    公开(公告)号:EP0661917A1

    公开(公告)日:1995-07-05

    申请号:EP94120104.8

    申请日:1994-12-19

    申请人: MOTOROLA, INC.

    IPC分类号: H05K7/20 H01L23/473

    摘要: A liquid cooled power dissipation apparatus (10) includes a metal matrix composite heat sink (11) with an insulation layer (17) integral to the apparatus (10). The insulation layer (17) is made integral to the apparatus (11) during infiltration of the metal matrix composite heat sink (11). Electronic components 23 are situated on top of the insulation layer (17).

    摘要翻译: 液体冷却功率耗散装置(10)包括具有与所述装置(10)成一体的绝缘层(17)的金属基体复合散热器(11)。 在金属基体复合散热器(11)的渗入期间,绝缘层(17)与装置(11)成一体。 电子部件23位于绝缘层(17)的顶部。

    Power transistor
    3.
    发明公开
    Power transistor 失效
    功率晶体管。

    公开(公告)号:EP0609531A3

    公开(公告)日:1995-06-07

    申请号:EP93120276.6

    申请日:1993-12-16

    申请人: MOTOROLA, INC.

    IPC分类号: H01L29/73

    摘要: A power transistor (11) having a control electrode (16), a first electrode (17), a second electrode (18), and a kelvin electrode (19) is provided. The power transistor (11) comprises a plurality of transistors (12-15) coupled in parallel. Each transistor having a control electrode, a first electrode, and a second electrode coupled respectively to the control electrode (16), first electrode (17), and second electrode (18) of the power transistor (11). A plurality of first resistors (26-29) reduce oscillation and ringing, each first resistor is coupled between the kelvin electrode (19) and a second electrode of a transistor of the plurality of transistors (12-15). A plurality of second resistors (21-24) also reduces oscillation and ringing, each second resistor is coupled between the control electrode (16) and a control electrode of a transistor of the plurality of transistors (12-15).

    Power transistor
    4.
    发明公开
    Power transistor 失效
    Leistungstransistor。

    公开(公告)号:EP0609531A2

    公开(公告)日:1994-08-10

    申请号:EP93120276.6

    申请日:1993-12-16

    申请人: MOTOROLA, INC.

    IPC分类号: H01L29/73

    摘要: A power transistor (11) having a control electrode (16), a first electrode (17), a second electrode (18), and a kelvin electrode (19) is provided. The power transistor (11) comprises a plurality of transistors (12-15) coupled in parallel. Each transistor having a control electrode, a first electrode, and a second electrode coupled respectively to the control electrode (16), first electrode (17), and second electrode (18) of the power transistor (11). A plurality of first resistors (26-29) reduce oscillation and ringing, each first resistor is coupled between the kelvin electrode (19) and a second electrode of a transistor of the plurality of transistors (12-15). A plurality of second resistors (21-24) also reduces oscillation and ringing, each second resistor is coupled between the control electrode (16) and a control electrode of a transistor of the plurality of transistors (12-15).

    摘要翻译: 提供具有控制电极(16),第一电极(17),第二电极(18)和开尔文电极(19)的功率晶体管(11)。 功率晶体管(11)包括并联耦合的多个晶体管(12-15)。 每个晶体管具有分别耦合到功率晶体管(11)的控制电极(16),第一电极(17)和第二电极(18)的控制电极,第一电极和第二电极。 多个第一电阻器(26-29)减少振荡和振铃,每个第一电阻器耦合在开尔文电极(19)和多个晶体管(12-15)中的晶体管的第二电极之间。 多个第二电阻器(21-24)还减少振荡和振铃,每个第二电阻器耦合在控制电极(16)和多个晶体管(12-15)中的晶体管的控制电极之间。