摘要:
An electronic module (10) for removing heat from a semiconductor die (41) and a method of making the electronic module (10). The electronic module (10) has a baseplate (11) mated with an isolation structure (23). The isolation structure (23) has three portions: a first portion is bonded to the top surface (12) of the baseplate (11), a second portion is bonded to the bottom surface (13) of the baseplate (11), and a third portion is bonded to a side (14) of the baseplate (11). A semiconductor die (41) is bonded to the first portion of the isolation structure (23) and another semiconductor die (41) is bonded to the second portion of the isolation structure (23). The baseplate (11) has a cavity (20) through which a fluid flows and transports heat away from each semiconductor die (41).
摘要:
A semiconductor package (100) and module (300) includes a unitary base structure (101) and alignment mechanisms (104). The unitary base structure (101) includes a semiconductor mounting area (102) and encircling walls (103). The structure provides resistance to bowing as compared to a flat base. The lack of bowing provides improved thermal contact to a cold plate of the operating environment. The lack of bowing also reduces certain failure modes. The alignment mechanism (104) aligns module components during assembly, thereby simplifying assembly by eliminating the need for complicated fixtures which hold components in place.
摘要:
A wirebondless module package and method of fabrication including a molded preform (15) of porous SiC with a cavity (16) having therein an AlN substrate (20) defining a plurality of pockets. The preform (15) being infiltrated with Al and the Al being deposited in each of the pockets. A semiconductor die (30, 31) mounted on the Al in one of the pockets. A dielectric layer (35) covering the Al and defining openings (36 - 46) therethrough positioned to expose the aluminum and a connection to the die (30, 31). A conductive material positioned on the dielectric layer (35) in contact with the die (30, 31) and the Al so as to define terminals (36, 37, 38, 39) and interconnections (55, 56, 57) between the die (30, 31) and the terminals (36, 37, 38, 39).
摘要:
A liquid cooled power dissipation apparatus (10) includes a metal matrix composite heat sink (11) with an insulation layer (17) integral to the apparatus (10). The insulation layer (17) is made integral to the apparatus (11) during infiltration of the metal matrix composite heat sink (11). Electronic components 23 are situated on top of the insulation layer (17).
摘要:
A method of fabricating a multi-chip package including an aluminum silicon substrate (10) with an aluminum nitride layer (11) thereon forming an electrically insulated surface (11) and aluminum heat conductive areas (12) positioned on the insulated surface (11). Conductors (18) on the surface (11) of the substrate (10) defining mounting areas (13) and external connections with each mounting area (13) positioned adjacent an associated one of the heat conductive areas (12) and a semiconductor chip (25) mounted in each mounting area (13). Heat conductive elements (26) connected to the rear surface of each chip (25) and to the associated one of the plurality of heat conductive areas (12), and each chip (25) encapsulated with reworkable encapsulant (28).
摘要:
A method of fabricating a multi-chip package including an aluminum silicon substrate (10) with an aluminum nitride layer (11) thereon forming an electrically insulated surface (11) and aluminum heat conductive areas (12) positioned on the insulated surface (11). Conductors (18) on the surface (11) of the substrate (10) defining mounting areas (13) and external connections with each mounting area (13) positioned adjacent an associated one of the heat conductive areas (12) and a semiconductor chip (25) mounted in each mounting area (13). Heat conductive elements (26) connected to the rear surface of each chip (25) and to the associated one of the plurality of heat conductive areas (12), and each chip (25) encapsulated with reworkable encapsulant (28).
摘要:
A method for forming a power circuit package (45) having a porous base structure (20) electrically isolated from a first porous die mount (21) and a second porous die mount (22) by a dielectric material (29). The porous base structure (20) is bonded to a second surface of the the dielectric material (29) whereas the first porous die mount (21), and the second porous die mount (22) are bonded to a first surface of the dielectric material (29). Simultaneous with the bonding step, the porous base structure (20), the first porous die mount (21), and the second porous die mount (22) are impregnated with a conductive material. Semiconductor die (32, 33, 34, and 35) are bonded to the impregnated die mounts. The semiconductor die (32, 33, 34, and 35) are then encapsulated by a molding compound.
摘要:
A wirebondless module package and method of fabrication including a molded preform (15) of porous SiC with a cavity (16) having therein an AlN substrate (20) defining a plurality of pockets. The preform (15) being infiltrated with Al and the Al being deposited in each of the pockets. A semiconductor die (30, 31) mounted on the Al in one of the pockets. A dielectric layer (35) covering the Al and defining openings (36 - 46) therethrough positioned to expose the aluminum and a connection to the die (30, 31). A conductive material positioned on the dielectric layer (35) in contact with the die (30, 31) and the Al so as to define terminals (36, 37, 38, 39) and interconnections (55, 56, 57) between the die (30, 31) and the terminals (36, 37, 38, 39).
摘要:
An electronic module (10) for removing heat from a semiconductor die (41) and a method of making the electronic module (10). The electronic module (10) has a baseplate (11) mated with an isolation structure (23). The isolation structure (23) has three portions: a first portion is bonded to the top surface (12) of the baseplate (11), a second portion is bonded to the bottom surface (13) of the baseplate (11), and a third portion is bonded to a side (14) of the baseplate (11). A semiconductor die (41) is bonded to the first portion of the isolation structure (23) and another semiconductor die (41) is bonded to the second portion of the isolation structure (23). The baseplate (11) has a cavity (20) through which a fluid flows and transports heat away from each semiconductor die (41).