公开(公告)号：EP2807668A1

公开(公告)日：2014-12-03

申请号：EP12826637.6

申请日：2012-12-05

申请人： Mapper Lithography IP B.V.

发明人： MEIJER, Jan Andries ,  SCHEFFERS, Paul IJmert ,  SARR, Abdou

IPC分类号： H01J37/09 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/252 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3005 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/2001 ,  H01J2237/24521 ,  H01J2237/2802 ,  H01J2237/30477 ,  H01J2237/31793

摘要： The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9 - 3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

摘要翻译： 本发明涉及在多带电粒子束光刻系统晶片级为光斑尺寸测量的装置，该装置包括一个刀刃结构上的闪烁材料的顶部上，寻求YAG材料。 在其中以锐角与Si的（110）面具有顶面的Si晶片刀口结构被布置。 在角度的实施方式是在从2到4度的范围内，优选在2.9-3.1度的范围内。 本发明涉及除了用于在多带电粒子束光刻系统中的晶片级制造用于光点尺寸测量设备的方法。