专利检索 ap:("Micron Technology, Inc.") AND inv:"CHARY, Indra, V." 第 1 页

1.

发明公开
MEMORY ARRAYS AND METHODS USED IN FORMING A MEMORY ARRAY COMPRISING STRINGS OF MEMORY CELLS AND OPERATIVE THROUGH-ARRAY-VIAS 审中-公开

公开(公告)号：EP4010923A1

公开(公告)日：2022-06-15

申请号：EP20850045.4

申请日：2020-05-06

申请人： Micron Technology, Inc.

发明人： HU, Yi , CARLSON, Merri, L. , CHANDOLU, Anilkumar , CHARY, Indra, V. , DAYCOCK, David , JAIN, Harsh, Narendrakumar , KING, Matthew, J. , LI, Jian , LOWE, Brett, D. , MOKHNA RAU, Prakash, Rau , XU, Lifang

IPC分类号： H01L27/11582 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L21/768

2.

发明公开
INTEGRATED ASSEMBLIES HAVING CONDUCTIVE POSTS EXTENDING THROUGH STACKS OF ALTERNATING MATERIALS 审中-公开

公开(公告)号：EP3977511A1

公开(公告)日：2022-04-06

申请号：EP20812746.4

申请日：2020-04-21

申请人： Micron Technology, Inc.

发明人： LUO, Shuangqiang , CHARY, Indra, V. , DORHOUT, Justin, B. , KLEIN, Rita, J.

IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11524 , H01L27/11556 , H01L29/792 , H01L29/66 , H01L29/788 , H01L21/768