专利检索 ap:("Micron Technology, Inc.") AND inv:"DORHOUT, Justin, B." 第 1 页

1.

发明公开
INTEGRATED ASSEMBLIES HAVING CONDUCTIVE POSTS EXTENDING THROUGH STACKS OF ALTERNATING MATERIALS 审中-公开

公开(公告)号：EP3977511A1

公开(公告)日：2022-04-06

申请号：EP20812746.4

申请日：2020-04-21

申请人： Micron Technology, Inc.

发明人： LUO, Shuangqiang , CHARY, Indra, V. , DORHOUT, Justin, B. , KLEIN, Rita, J.

IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11524 , H01L27/11556 , H01L29/792 , H01L29/66 , H01L29/788 , H01L21/768

2.

发明公开
MICROELECTRONIC DEVICES INCLUDING STAIR STEP STRUCTURES, AND RELATED ELECTRONIC SYSTEMS AND METHODS 审中-实审

公开(公告)号：EP4396859A1

公开(公告)日：2024-07-10

申请号：EP22865717.7

申请日：2022-08-30

申请人： Micron Technology, Inc.

发明人： ZHAO, Bo , KING, Matthew, J. , REECE, Jason , GOSSMAN, Michael, J. , VADIVEL, Shruthi Kumara , BARCLAY, Martin, J. , XU, Lifang , PETERSON, Joel, D. , PARK, Matthew , OLSON, Adam, L. , KEWLEY, David, A. , ZHANG, Xiaosong , DORHOUT, Justin, B. , YOW, Zhen Feng , CHOOI, Kah Sing , TRAN, Tien Minh Quan , ONG, Biow Hiem

IPC分类号： H01L

CPC分类号： H10B43/50 , H10B41/50

3.

发明公开
INTEGRATED ASSEMBLIES HAVING BARRIER MATERIAL BETWEEN SILICON-CONTAINING MATERIAL AND ANOTHER MATERIAL REACTIVE WITH SILICON 审中-公开

公开(公告)号：EP4035204A1

公开(公告)日：2022-08-03

申请号：EP20868638.6

申请日：2020-07-27

申请人： Micron Technology, Inc.

发明人： DATTA, Devesh, Kumar , DAYCOCK, David , CHOW, Keen, Wah , GEORGE, Tom , DORHOUT, Justin, B. , MA, Bingli , KLEIN, Rita, J. , MELDRIM, John, Mark

IPC分类号： H01L21/768 , H01L27/11524 , H01L27/11556 , H01L27/11548 , H01L27/1157 , H01L27/11582 , H01L27/11575

4.

发明公开
MEMORY ARRAYS, AND METHODS OF FORMING MEMORY ARRAYS 审中-公开

公开(公告)号：EP3577688A1

公开(公告)日：2019-12-11

申请号：EP18748728.5

申请日：2018-02-01

申请人： Micron Technology, Inc.

发明人： DAYCOCK, David , HILL, Richard, J. , LARSEN, Christopher , KIM, Woohee , DORHOUT, Justin, B. , LOWE, Brett, D. , HOPKINS, John, D. , TAO, Qian , CASEY, Barbara, L.

IPC分类号： H01L27/11519 , H01L27/11524 , H01L27/11529 , H01L27/11565 , H01L27/11568 , H01L27/1157