专利检索 ap:("Micron Technology, Inc.") AND inv:"KARDA, Kamal M." 第 1 页

1.

发明公开
DEVICES INCLUDING VERTICAL TRANSISTORS HAVING HYDROGEN BARRIER MATERIALS, AND RELATED METHODS 审中-公开

公开(公告)号：EP3857604A1

公开(公告)日：2021-08-04

申请号：EP19870314.2

申请日：2019-10-08

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , GANDHI, Ramanathan , LEE, Yi Fang , SILLS, Scott E. , LIU, Haitao , RAMASWAMY, Durai Vishak Nirmal

IPC分类号： H01L29/732 , H01L29/66 , H01L21/28 , H01L21/768

2.

发明公开
SEMICONDUCTOR DEVICES, HYBRID TRANSISTORS, AND RELATED METHODS 审中-公开

公开(公告)号：EP3676878A1

公开(公告)日：2020-07-08

申请号：EP18852228.8

申请日：2018-08-30

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , LIU, Haitao , RAMASWAMY, Durai Vishak Nirmal

IPC分类号： H01L29/786 , H01L27/105

3.

发明公开
MEMORY CELLS 审中-公开
标题翻译：记忆细胞

公开(公告)号：EP3259757A1

公开(公告)日：2017-12-27

申请号：EP16752758.9

申请日：2016-01-13

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , TAO, Qian , RAMASWAMY, Durai Vishak Nirmal , LIU, Haitao , PRALL, Kirk D. , CHAVAN, Ashonita A.

IPC分类号： G11C11/22

CPC分类号： H01L27/11502 , H01G4/08 , H01L27/10805 , H01L27/10852 , H01L27/11507 , H01L28/40 , H01L28/75

摘要： A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.

4.

发明公开
MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL 审中-公开

公开(公告)号：EP3903349A1

公开(公告)日：2021-11-03

申请号：EP19903057.8

申请日：2019-12-23

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , LIU, Haitao , SARPATWARI, Karthik , RAMASWAMY, Durai Vishak Nirmal

IPC分类号： H01L27/108

5.

发明公开
MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME 审中-公开

公开(公告)号：EP3410437A1

公开(公告)日：2018-12-05

申请号：EP18180531.8

申请日：2014-10-29

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , GEALY, F. Daniel , RAMASWAMY, D.V. Nirmal , MOULI, Chandra V.

IPC分类号： G11C11/22

CPC分类号： G11C11/5657 , G11C11/221 , G11C11/2273 , G11C11/2275 , H01L27/11507 , H01L28/40 , H01L43/02 , H01L43/12

摘要： Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include: forming a first conductive material (513) on an interior sidewall of a via (516); forming a first ferroelectric material (520) on the interior sidewall of the via (506); removing a dielectric material to expose an exterior sidewall of the via; forming a second ferroelectric material on the exterior sidewall of the via (516), wherein the second ferroelectric material is a different type of ferroelectric material to the first ferroelectric material; and forming a second conductive material (517) in the via.

6.

发明公开
MEMORY DEVICE HAVING MEMORY CELL STRINGS AND SEPARATE READ AND WRITE CONTROL GATES 审中-实审

公开(公告)号：EP4378287A1

公开(公告)日：2024-06-05

申请号：EP22850431.2

申请日：2022-07-15

申请人： Micron Technology, Inc.

发明人： LIU, Haitao , KARDA, Kamal M. , FAYRUSHIN, Albert , DONG, Yingda

IPC分类号： H10B43/35 , H10B43/50 , H10B43/20 , H10B43/40 , G11C16/10 , G11C16/26

CPC分类号： H01L29/42344 , H10B43/27 , H10B43/20 , H01L29/40117

7.

发明公开
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLATE 审中-公开

公开(公告)号：EP4022678A1

公开(公告)日：2022-07-06

申请号：EP20856718.0

申请日：2020-08-26

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , SARPATWARI, Karthik , LIU, Haitao , RAMASWAMY, Durai Vishak Nirmal

IPC分类号： H01L27/108 , H01L29/788 , H01L29/66 , H01L29/423

8.

发明公开
TRANSISTORS INCLUDING HETEROGENEOUS CHANNELS, AND RELATED DEVICES, ELECTRONIC SYSTEMS, AND METHODS 审中-公开

公开(公告)号：EP3857605A1

公开(公告)日：2021-08-04

申请号：EP19870569.1

申请日：2019-10-08

申请人： Micron Technology, Inc.

发明人： SILLS, Scott E. , GANDHI, Ramanathan , RAMASWAMY, Durai Vishak Nirmal , LEE, Yi Fang , KARDA, Kamal M.

IPC分类号： H01L29/778 , H01L21/28 , H01L21/02 , H01L29/80 , H01L27/108 , H01L43/08 , H01L45/00

9.

发明授权
MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME 有权

公开(公告)号：EP3063766B1

公开(公告)日：2018-08-15

申请号：EP14857361.1

申请日：2014-10-29

申请人： Micron Technology, Inc.

发明人： KARDA, Kamal M. , GEALY, F. Daniel , RAMASWAMY, D.V. Nirmal , MOULI, Chandra V.

IPC分类号： G11C11/22

CPC分类号： G11C11/5657 , G11C11/221 , G11C11/2273 , G11C11/2275 , H01L27/11507 , H01L28/40 , H01L43/02 , H01L43/12

摘要： Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.

10.

发明公开
TRANSISTOR AND METHODS OF FORMING TRANSISTORS 审中-公开

公开(公告)号：EP4010930A1

公开(公告)日：2022-06-15

申请号：EP20852995.8

申请日：2020-08-06

申请人： Micron Technology, Inc.

发明人： NAHAR, Manuj , ANTONOV, Vassil N. , KARDA, Kamal M. , MUTCH, Michael , LIU, Hung-wei , HULL, Jeffery B.

IPC分类号： H01L29/78 , H01L29/66 , H01L29/423 , H01L29/10 , H01L29/08 , H01L29/16 , H01L21/02