公开(公告)号：EP3255655A1

公开(公告)日：2017-12-13

申请号：EP15881140.6

申请日：2015-06-23

申请人： Mitsubishi Electric Corporation

发明人： IMAI, Shohei ,  IYOMASA, Kazuhiro ,  YAMANAKA, Koji ,  MAEHARA, Hiroaki ,  KANAYA, Ko ,  KUNII, Tetsuo ,  KATAYAMA, Hideaki

IPC分类号： H01L21/338 ,  H01L21/822 ,  H01L27/04 ,  H01L29/812

CPC分类号： H01L29/7831 ,  H01L21/822 ,  H01L27/04 ,  H01L27/0629 ,  H01L29/812

摘要： A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).

摘要翻译： 一种半导体器件具有设置在半导体衬底（1）上的有源区中的一个或多个栅极指（20），以及设置在有源区中的源极指（30）和漏极指（40） 并交替布置以允许每个门指夹在源指和漏指之间。 半导体器件包括终端电路（60），该终端电路在输入到一个或多个栅极指的输入端的信号的频率处具有电感阻抗，并且在被隔开的区域处直接或间接地连接到一个或多个栅极指 远离一个或多个门指（20）的输入端子（21a）的连接位置。