利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.008 秒)

    EVEN HARMONIC MIXER
    1.
    发明公开
    EVEN HARMONIC MIXER 有权
    MISCHERFÜRGERADE OBERSCHWINGUNGEN

    公开(公告)号：EP2151919A1

    公开(公告)日：2010-02-10

    申请号：EP07742380.4

    申请日：2007-04-25

    申请人： Mitsubishi Electric Corporation

    发明人： KAWAKAMI, Kenji ,  SUZUKI, Takuya ,  KANAYA, Ko ,  KITAMURA, Yoichi

    IPC分类号： H03D7/02

    CPC分类号： H03D9/0633 ,  H03D7/02

    摘要： Provided is an even harmonic mixer which is reduced in cost and size. The even harmonic mixer includes: a transducer in which a conductor of a microstrip line is connected to a ground plane of a waveguide, for transducing an RF signal transmitted in a waveguide mode into a transmission mode of the microstrip line; an anti-parallel diode pair which is cascade-connected to a microstrip line side of the transducer, and formed on a semiconductor substrate; a branching circuit for branching an LO signal and an IF signal; an open-end stub which is disposed between the transducer and the anti-parallel diode pair, and has a line length of about 1/2 wavelength at an RF signal frequency; and an open-end stub which is disposed between the anti-parallel diode pair and the branching circuit, and has a line length of about 1/4 wavelength at the RF signal frequency.

    摘要翻译： 提供了一种降低成本和尺寸的均匀谐波混合器。 所述均匀谐波混频器包括：传感器，其中微带线的导体连接到波导的接地平面，用于将以波导模式传输的RF信号转换为微带线的传输模式; 反并联二极管对，其级联连接到换能器的微带线侧，并形成在半导体衬底上; 用于分支LO信号和IF信号的分支电路; 设置在换能器和反并联二极管对之间的开路短截线，并且在RF信号频率处具有约1/2波长的线路长度; 以及设置在反并联二极管对和分支电路之间的开路短截线，并且在RF信号频率处具有约1/4波长的线路长度。

    SEMICONDUCTOR DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：EP3255655A1

    公开(公告)日：2017-12-13

    申请号：EP15881140.6

    申请日：2015-06-23

    申请人： Mitsubishi Electric Corporation

    发明人： IMAI, Shohei ,  IYOMASA, Kazuhiro ,  YAMANAKA, Koji ,  MAEHARA, Hiroaki ,  KANAYA, Ko ,  KUNII, Tetsuo ,  KATAYAMA, Hideaki

    IPC分类号： H01L21/338 ,  H01L21/822 ,  H01L27/04 ,  H01L29/812

    CPC分类号： H01L29/7831 ,  H01L21/822 ,  H01L27/04 ,  H01L27/0629 ,  H01L29/812

    摘要： A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).

    摘要翻译： 一种半导体器件具有设置在半导体衬底（1）上的有源区中的一个或多个栅极指（20），以及设置在有源区中的源极指（30）和漏极指（40） 并交替布置以允许每个门指夹在源指和漏指之间。 半导体器件包括终端电路（60），该终端电路在输入到一个或多个栅极指的输入端的信号的频率处具有电感阻抗，并且在被隔开的区域处直接或间接地连接到一个或多个栅极指 远离一个或多个门指（20）的输入端子（21a）的连接位置。

    SEMICONDUCTOR CHIP AND HIGH FREQUENCY CIRCUIT
    3.
    发明公开
    SEMICONDUCTOR CHIP AND HIGH FREQUENCY CIRCUIT 有权
    半导体芯片和高频电路

    公开(公告)号：EP2133992A1

    公开(公告)日：2009-12-16

    申请号：EP07831941.5

    申请日：2007-11-15

    申请人： Mitsubishi Electric Corporation

    发明人： SUZUKI, Takuya ,  KAWAKAMI, Kenji ,  KANAYA, Ko ,  KITAMURA, Yoichi

    IPC分类号： H03D7/02 ,  H01L21/822 ,  H01L27/04

    CPC分类号： H03D7/02 ,  H01L23/66 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03D9/0633 ,  H01L2924/00

    摘要： To provide a semiconductor chip capable of making a reflection circuit, a branching circuit, a matching circuit, and the like that are connected to a chip end function in an adequate manner. A semiconductor chip is arranged on a semiconductor substrate on which at least one semiconductor device 11 is formed and includes a wiring pattern 12, 14 connected to each terminal of the semiconductor device 11 and an electrode pad 13, 15 connected to the wiring pattern 12, 14 for connecting a signal input/output circuit that is formed on a separate substrate provided separately from the semiconductor substrate. The semiconductor chip includes a parallel wiring pattern 16, 18 connected to the wiring pattern 12, 14 on at least one terminal end of the semiconductor device; and a reactance-circuit connection electrode pad 17, 19 connected to the parallel wiring pattern 16, 18 for electrically connecting a reactance circuit that is formed on the separate substrate separately from the signal input/output circuit.